Datasheet BUK9226-75A Specification

BUK9226-75A

N-channel TrenchMOS logic level FET

Rev. 02 — 27 January 2011 Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product has been designed and qualified to
the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 AEC Q101 compliant
 Low conduction losses due to lo

on-state resistance

w

 Suitable for logic level gate drive

sources

itable for thermally demanding

 Su

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads
 Automotive and general purpose

power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

DS

I

D

P

tot

Static characteristics

R

DSon

Avalanche ruggedness

E

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175°C --75V
drain current VGS=5V; Tmb=25°C;

see Figure 1

total power dissipation Tmb= 25 °C; see Figure 2 --114W

drain-source on-state
resistance

non-repetitive
drain-source
avalanche energy

VGS=4.5V; ID=25A; Tj=25°C--29mΩ

=10V; ID=25A; Tj= 25 °C - 20.9 24.6 mΩ

V

GS

=5V; ID=25A; Tj=25°C;

V

GS

see Figure 13

ID=49A; V
RGS=50Ω; VGS=5V;
T

j(init)

; see Figure 3

; see Figure 12

≤ 75 V;

sup

= 25 °C; unclamped

--45A

-22.126mΩ

--120mJ

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Nexperia B.V. 2017. All rights reserved

Nexperia

m

2. Pinning information

BUK9226-75A

N-channel TrenchMOS logic level FET

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 G gate
2 D drain
3Ssource

mb

G

mb D mounting base; connected to drain

2

3

1

bb076

SOT428 (DPAK)

3. Ordering information

Table 3. Ordering information

Type number Package

BUK9226-75A DPAK plastic single-ended surface-mounted package (DPAK); 3 leads

Name Description Version

(one lead cropped)

D

S

SOT428

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Product data sheet Rev. 02 — 27 January 2011 2 of 14

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4. Limiting values

BUK9226-75A

N-channel TrenchMOS logic level FET

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

DS

V

DGR

V

GS

I

D

I

DM

P

tot

T

stg

T

j

V

GSM

Source-drain diode

I

S

I

SM

Avalanche ruggedness

E

DS(AL)S

drain-source voltage Tj≥ 25 °C; Tj≤ 175 °C - 75 V
drain-gate voltage RGS=20kΩ -75V
gate-source voltage -10 10 V
drain current Tmb=25°C; VGS=5V; see Figure 1;

-45A

see Figure 3

= 100 °C; VGS=5V; see Figure 1 -32A

T

mb

peak drain current Tmb= 25 °C; pulsed; tp≤ 10 µs;

[1]

- 182 A

see Figure 3
total power dissipation Tmb=25°C; see Figure 2 -114W
storage temperature -55 175 °C
junction temperature -55 175 °C
peak gate-source voltage pulsed; tp≤ 50 µs -15 15 V

source current Tmb=25°C - 45 A
peak source current pulsed; tp≤ 10 µs; Tmb= 25 °C - 182 A

non-repetitive drain-source
avalanche energy

ID=49A; V

VGS=5V; T

≤ 75 V; RGS=50Ω;

sup

= 25 °C; unclamped

j(init)

- 120 mJ

[1] Peak drain current is limited by chip, not package.

120

I

der

(%)

80

40

0

0 20015050 100

03aa24

Tmb (°C)

Fig 1. Normalized continuous drain current as a

function of mounting base temperature

120

P

der

(%)

80

40

0

0 20015050 100

03aa16

Tmb (°C)

Fig 2. Normalized total power dissipation as a

function of mounting base temperature

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Product data sheet Rev. 02 — 27 January 2011 3 of 14

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Nexperia

BUK9226-75A

N-channel TrenchMOS logic level FET

3

10

I

D

(A)

2

10

10

1

1 10

R

= VDS/I

DSon

P

δ =

t

p

T

D

t

p

T

t

D.C.

10

VDS (V)

03nb19

tp = 10 us

100 us

1 ms

10 ms

100 ms

2

Fig 3. Safe operating area; continuous and peak drain currents as a function of drain -s ou rce voltage

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Product data sheet Rev. 02 — 27 January 2011 4 of 14

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5. Thermal characteristics

BUK9226-75A

N-channel TrenchMOS logic level FET

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-mb)

thermal resistance from junction to

see Figure 4 --1.3K/W

mounting base

R

th(j-a)

thermal resistance from junction to
ambient

10

Z

th(j-mb)

(K/W)

1

δ = 0.5

0.2

0.1

−1

10

0.05

0.02

−2

10

Single Shot

−3

10

−6

10

−5

10

10

minimum footprint ; FR4
board

−4

−3

10

- 71.4 - K/W

03nb20

t

P

t

p

T

−2

10

−1

δ =

tp (s)

p

T

t

110

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

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Product data sheet Rev. 02 — 27 January 2011 5 of 14

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6. Characteristics

BUK9226-75A

N-channel TrenchMOS logic level FET

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V

(BR)DSS

V

GS(th)

drain-source breakdown
voltage

gate-source threshold voltage ID=1mA; VDS=VGS; Tj= 175 °C;

ID= 0.25 mA; VGS=0V; Tj=25°C75--V

= 0.25 mA; VGS=0V; Tj= -55 °C 70 - - V

I

D

0.5--V

see Figure 11

=1mA; VDS=VGS; Tj=25°C;

I

D

11.52V

see Figure 11
I

=1mA; VDS=VGS; Tj=-55°C;

D

--2.3V

see Figure 11

I

DSS

I

GSS

R

DSon

drain leakage current VDS=55V; VGS=0V; Tj= 25 °C - 0.05 10 µA

=55V; VGS=0V; Tj= 175 °C - - 500 µA

V

DS

gate leakage current VGS=10V; VDS=0V; Tj= 25 °C - 2 100 nA

=-10V; VDS=0V; Tj= 25 °C - 2 100 nA

V

GS

drain-source on-state
resistance

VGS=5V; ID=25A; Tj=175°C;

- - 54.6 mΩ

see Figure 12; see Figure 13

=4.5V; ID=25A; Tj=25°C --29mΩ

V

GS

=10V; ID=25A; Tj= 25 °C - 20.9 24.6 mΩ

V

GS

V

=5V; ID=25A; Tj=25°C;

GS

- 22.1 26 mΩ

see Figure 13; see Figure 12

Dynamic characteristi cs

C
C
C
t

d(on)

t

r

t

d(off)

t

f

L

D

L

S

iss
oss
rss

input capacitance VGS=0V; VDS=25V; f=1MHz;
output capacitance - 319 383 pF

Tj=25°C; see Figure 14

reverse transfer capacitance - 215 295 pF
turn-on delay time VDS=30V; RL=1.2Ω; VGS=5V;

R

=10Ω; Tj=25°C

rise time - 141 - ns

G(ext)

turn-off delay time - 142 - ns
fall time - 108 - ns
internal drain inductance mea sured from drain lead from

package to centre of die ; T

=25°C

j

internal source inductance measured from source lead from

- 2340 3120 pF

-24-ns

-2.5-nH

-7.5-nH

package to source bond pad ;

=25°C

T

j

Source-drain diode

V

SD

source-drain voltage IS=25A; VGS=0V; Tj=25°C;

- 0.85 1.2 V

see Figure 15

t

rr

Q

r

reverse recovery time IS=20A; dIS/dt = 100 A/µs;

=-10V; VDS=30V; Tj=25°C

V

GS

recovered charge IS=20A; dIS/dt = -100 A/µs;

-49-ns

-115-nC

VGS=-10V; VDS=30V; Tj=25°C

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Product data sheet Rev. 02 — 27 January 2011 6 of 14

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BUK9226-75A

N-channel TrenchMOS logic level FET

V

03nb16

DS

(V)

7
6

5

4

3

2

(A)

200

I

D

180

160

140

120

100

VGS = 10(V)

80

60

40

20

0

0246810

8

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values

03aa36

(A)

-1

10
I

D

-2

10

V

03nb15

GS

(V)

35

R

DSon

(mOhm)

30

25

20

15

10

246810

Fig 6. Drain-source on-state resistance as a function

of gate-source voltage; typical values

03nb13

g
(S)

60

fs

50

-3

10

maxtypmin

-4

10

-5

10

-6

10

0123

V

(V)

GS

Fig 7. Sub-threshold drain current as a function of

gate-source voltage

40

30

20

10

0

0 20406080

I

(A)

D

Fig 8. Forward transconductance as a function of

drain current; typical values

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Product data sheet Rev. 02 — 27 January 2011 7 of 14

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Nexperia

BUK9226-75A

N-channel TrenchMOS logic level FET

= 25 °C

j

03nb14

V

GS

(V)

45

I

D

(A)

40

35

30

25

20

15

10

5

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

T

= 175 °CT

j

Fig 9. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

2.5

V

GS(th)

(V)

2

1.5

1

0.5

0

-60 0 60 120 180

max

typ

min

03aa33

T

(°C)

j

5

V

GS

(V)

4.5

4

3.5

3

2.5

2

1.5

1

0.5

0

0 1020304050

DS

= 14(V)

V

DS

03nb12

= 60(V)V

Q

(nC)

G

Fig 10. Gate-source vo ltage as a function of turn-on

gate charge; typical values

60

R

DSon

(mΩ)

55

50

45

40

35

30

25

20

15

10

V

= 3 (V)

GS

10 30 50 70 90 110 130 150 170

3.2

3.4

3.6

3.8

03nb17

4

5

(A)

I

D

Fig 11. Gate-source threshold voltage as a function of

junction temperature

BUK9226-75A All information provided in this document is subject to legal disclaimers.

Fig 12. Drain-source on-state resistance as a function

of drain current; typical values

Product data sheet Rev. 02 — 27 January 2011 8 of 14

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Nexperia

BUK9226-75A

N-channel TrenchMOS logic level FET

2.4

a

1.6

0.8

0

−60 180120060

03nb25

Tj (°C)

Fig 13. Normalized drain-source o n-state resistan ce

factor as a function of junction temperature

60

I

S

(A)

50

03nb18

2

VDS(V)

C

(pF)

6000

5000

4000

3000

2000

1000

C

iss

C

oss

C

rss

0

−2

10

−1

10

11010

Fig 14. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical
values

03nb11

40

30

20

Tj = 175 °C

10

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2

Tj = 25 °C

V

SD

(V)

Fig 15. Reverse diode current as a function of reverse diode voltage; typical values

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Product data sheet Rev. 02 — 27 January 2011 9 of 14

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Nexperia

8

P

7. Package outline

lastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped)

y

BUK9226-75A

N-channel TrenchMOS logic level FET

SOT42

L

2

b

1

E

b

2

2

13

b

e

e

1

A

D

1

H

L

M

wA

D

mounting
base

L

1

A

A

1

c

E

1

D

2

0 5 10 mm

scale

DIMENSIONS (mm are the original dimensions)

0.2

y

max

0.2

Ab

UNIT

mm

OUTLINE
VERSION

SOT428 SC-63

2.38

2.22

A

0.93

0.46

1

b

bcD

0.89

0.71

IEC JEDEC JEITA

1.1

0.9

2

1

5.46

0.56

5.00

0.20

TO-252

1

6.22

5.98

REFERENCES

D

min

4.0

2

E

1

Ee

min

6.73

4.45

6.47

e

2.285 4.57

L

1

min

0.5

L

2

0.9

0.5

ISSUE DATE

06-02-14

06-03-16

Lw

H

1

D

10.4

2.95

9.6

2.55

EUROPEAN

PROJECTION

Fig 16. Package outline SOT428 (DPAK)

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Product data sheet Rev. 02 — 27 January 2011 10 of 14

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8. Revision history

BUK9226-75A

N-channel TrenchMOS logic level FET

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

BUK9226-75A v.2 20110127 Product data sheet - BUK9226_75A v.1
Modifications:

•

The format of this data sheet has been redesigned to comply with the new identity guidelines

P Semiconductors.

of NX

• Legal texts have been adapted to the new company name where appropriate.

BUK9226_75A v.1 20001010 Product specification - -

BUK9226-75A All information provided in this document is subject to legal disclaimers.

Product data sheet Rev. 02 — 27 January 2011 11 of 14

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Nexperia

9. Legal information

9.1 Data sheet status

BUK9226-75A

N-channel TrenchMOS logic level FET

Document status

Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) descr ibed in this document may have changed since this document was publish ed and may differ in case of multiple devices. The latest product

tatus information is available on the Internet at URL http://www.nexperia.com.

s

[1][2]

Product status

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local Nexperia sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.

Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, Nexperia does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.

In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.

Right to make changes — Nexperia reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.

[3]

Definition

Suitability for use in automotive applications — This Nexperia

product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of a Nexperia
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. Nexperia accepts no
liability for inclusion and/or use of Nexperia products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.

Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteri stics sections of this
document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.

Customers are responsible for the design and operation of their applications
and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the Nexperia
product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.

Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications and
the products or of the application or use by customer’s third part y
customer(s). Nexperia does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.

Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual

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Product data sheet Rev. 02 — 27 January 2011 12 of 14

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BUK9226-75A

N-channel TrenchMOS logic level FET

agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
app

lying the customer’s general terms and conditions with regard to the

purchase of Nexperia products by customer.

ffer to sell or license — Nothing in this document may be interp reted or

No o

construed as an offer to sell products that is open f or acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.

Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.

10. Contact information

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: sales

9.4 Trademarks

Notice: All referenced brands, prod uct names, service names and trad emarks
are the property of their respective owners.

[e-mail]

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Product data sheet Rev. 02 — 27 January 2011 13 of 14

Nexperia

©

Nexperia B.V. 2017. All rights reserved

For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: [e-mail]

Date of release:

27 January 2011

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .5

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .6

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13

BUK9226-75A

N-channel TrenchMOS logic level FET