Page 1
Philips Semiconductors Product specification
TrenchMOS transistor BUK7614-55
Standard level FET
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope V
suitable for surface mounting. Using I
’trench’ technology the device P
featuresverylow on-state resistance T
and has integral zener diodes giving R
DS
D
tot
j
DS(ON)
ESD protection up to 2kV. It is resistance VGS = 10 V
intended for use in automotive and
general purpose switching
applications.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Drain-source voltage 55 V
Drain current (DC) 68 A
Total power dissipation 142 W
Junction temperature 175 ˚C
Drain-source on-state 14 mΩ
PIN DESCRIPTION
mb
d
1 gate
2 drain
3 source
mb drain
2
13
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
±V
I
D
I
D
I
DM
P
T
DS
DGR
tot
stg
GS
, T
j
Drain-source voltage - - 55 V
Drain-gate voltage RGS = 20 kΩ -55V
Gate-source voltage - - 16 V
Drain current (DC) Tmb = 25 ˚C - 68 A
Drain current (DC) Tmb = 100 ˚C - 48 A
Drain current (pulse peak value) Tmb = 25 ˚C - 240 A
Total power dissipation Tmb = 25 ˚C - 142 W
Storage & operating temperature - - 55 175 ˚C
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
th j-mb
R
th j-a
April 1998 1 Rev 1.000
Thermal resistance junction to - - 1.05 K/W
mounting base
Thermal resistance junction to Minimum footprint, FR4 50 - K/W
ambient board
Page 2
Philips Semiconductors Product specification
TrenchMOS transistor BUK7614-55
Standard level FET
STATIC CHARACTERISTICS
Tj= 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
GSS
±V
R
DS(ON)
(BR)GSS
Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 55 - - V
voltage Tj = -55˚C 50 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2 3.0 4.0 V
Tj = 175˚C 1 - - V
Tj = -55˚C - - 4.4 V
Zero gate voltage drain current VDS = 55 V; VGS = 0 V; - 0.05 10 µA
Tj = 175˚C - - 500 µA
Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.02 1 µA
Tj = 175˚C - - 20 µA
Gate-source breakdown IG = ±1 mA; 16 - - V
voltage
Drain-source on-state VGS = 10 V; ID = 25 A - 12 14 mΩ
resistance Tj = 175˚C - - 30 mΩ
DYNAMIC CHARACTERISTICS
Tmb = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
C
C
C
t
t
t
t
L
fs
iss
oss
rss
d on
r
d off
f
d
Forward transconductance VDS = 25 V; ID = 25 A 8 39 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2200 2900 pF
Output capacitance - 500 600 pF
Feedback capacitance - 200 270 pF
Turn-on delay time VDD = 30 V; ID = 25 A; - 18 26 ns
Turn-on rise time VGS = 10 V; RG = 10 Ω - 3585ns
Turn-off delay time Resistive load - 45 60 ns
Turn-off fall time - 30 45 ns
Internal drain inductance Measured from upper edge of drain - 2.5 - nH
tab to centre of die
L
s
Internal source inductance Measured from source lead - 7.5 - nH
soldering point to source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Tj = 25˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
DR
I
DRM
V
t
rr
Q
SD
rr
Continuous reverse drain - - 68 A
current
Pulsed reverse drain current - - 240 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.95 1.2 V
IF = 65 A; VGS = 0 V - 1.0 - V
Reverse recovery time IF = 65 A; -dIF/dt = 100 A/µs; - 57 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.14 - µC
April 1998 2 Rev 1.000
Page 3
Philips Semiconductors Product specification
TrenchMOS transistor BUK7614-55
Standard level FET
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 65 A; VDD ≤ 25 V; - - 200 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
energy
PD%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Normalised Power Derating
Tmb / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120
110
100
90
80
70
60
50
40
30
20
10
0
0 20 40 60 80 100 120 140 160 180
Tmb / C
= f(Tmb)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Tmb); conditions: VGS ≥ 5 V
D 25 ˚C
100
SOAX514
tp =
1 us
10 us
100 us
1 ms
10 ms
100 ms
1000
ID / A
RDS(ON) = VDS/ID
100
10
1
11055
DC
VDS / V
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
t
p
T
BUKX514-55
p
t
D =
T
t
Zth / (K/W)
1E+01
1E+00
1E-01
1E-02
1E-03
0.5
0.2
0.1
0.05
0.02
0
1E-07 1E-05 1E-03 1E-01 1E+01
t / s
P
D
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-mb
p
April 1998 3 Rev 1.000
Page 4
Philips Semiconductors Product specification
TrenchMOS transistor BUK7614-55
Standard level FET
100
16
ID/A
10
80
60
40
20
0
0246810
Fig.5. Typical output characteristics, Tj = 25 ˚C
RDS(ON)/mOhm
30
VGS/V = 6
25
20
15
8
7.5
VDS/V
VGS/V =
ID = f(VDS); parameter V
6.5
7
6.5
6
5.5
5
4.5
4
.
GS
7
8
9
10
40
gfs/S
35
30
25
20
15
10
5
0
0 20406080100
Fig.8. Typical transconductance, Tj = 25 ˚C
ID/A
.
gfs = f(ID); conditions: VDS = 25 V
2.5
1.5
a
2
BUK959-60
Rds(on) normlised to 25degC
10
5
0
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 100
ID/A
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
= f(ID); parameter V
DS(ON)
100
ID/A
80
60
40
20
0
0123456789
Tj/C = 175
VGS/V
GS
25
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter T
1
0.5
-100 -50 0 50 100 150 200
.
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 ˚C
VGS(TO) / V
5
max.
4
typ.
3
min.
2
1
0
-100 -50 0 50 100 150 200
Tmb / degC
= f(Tj); ID = 25 A; VGS = 5 V
BUK759-60
Tj / C
Fig.10. Gate threshold voltage.
V
j
= f(Tj); conditions: ID = 1 mA; VDS = V
GS(TO)
GS
April 1998 4 Rev 1.000
Page 5
Philips Semiconductors Product specification
TrenchMOS transistor BUK7614-55
Standard level FET
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
012345
2%
Sub-Threshold Conduction
typ
98%
Fig.11. Sub-threshold drain current.
ID = f(V
4
3.5
3
2.5
2
Thousands (pF)
1.5
1
5
0
0.01 0.1 1 10 100
Fig.12. Typical capacitances, C
; conditions: Tj = 25 ˚C; VDS = V
GS)
VDS/V
, C
iss
oss
, C
GS
rss
.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Ciss
Coss
Crss
100
IF/A
80
60
Tj/C = 175 25
40
20
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VSDS/V
Fig.14. Typical reverse diode current.
IF = f(V
120
110
100
90
80
70
60
50
40
30
20
10
0
); conditions: V
SDS
WDSS%
20 40 60 80 100 120 140 160 180
= 0 V; parameter T
GS
Tmb / C
Fig.15. Normalised avalanche energy rating.
W
% = f(Tmb); conditions: ID = 75 A
DSS
j
12
VGS/V
10
8
6
4
2
0
0 102030405060
VDS = 14V
VDS = 44V
QG/nC
Fig.13. Typical turn-on gate-charge characteristics.
V
= f(QG); conditions: ID = 50 A; parameter V
GS
DS
L
VDS
VGS
0
RGS
T.U.T.
Fig.16. Avalanche energy test circuit.
W
= 0.5 ⋅ LI
DSS
2
D
⋅BV
DSS
/(BV
R 01
shunt
DSS−VDD
VDD
+
-
-ID/100
)
April 1998 5 Rev 1.000
Page 6
Philips Semiconductors Product specification
TrenchMOS transistor BUK7614-55
Standard level FET
VDD
+
RD
VDS
VGS
0
RG
T.U.T.
Fig.17. Switching test circuit.
-
April 1998 6 Rev 1.000
Page 7
Philips Semiconductors Product specification
TrenchMOS transistor BUK7614-55
Standard level FET
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
2.54 (x2)
MOUNTING INSTRUCTIONS
Dimensions in mm
10.3 max
11 max
15.4
0.85 max
(x2)
4.5 max
1.4 max
0.5
Fig.18. SOT404 : centre pin connected to mounting base.
11.5
2.5
9.0
17.5
2.0
3.8
5.08
Fig.19. SOT404 : soldering pattern for surface mounting
.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
April 1998 7 Rev 1.000
Page 8
Philips Semiconductors Product specification
TrenchMOS transistor BUK7614-55
Standard level FET
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1998 8 Rev 1.000
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