Datasheet BUK7514-30 Datasheet (Philips)

Philips Semiconductors Product specification

TrenchMOS transistor BUK7514-30
Standard level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
standard level field-effect power
transistor in a plastic envelope using V
’trench’ technology. The device I
featuresverylowon-state resistance P
and has integral zener diodes giving T
ESD protection up to 2kV. It is R

DS

D

tot
j

DS(ON)

intended for use in automotive and resistance VGS = 10 V
general purpose switching
applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 30 V
Drain current (DC) 69 A
Total power dissipation 125 W
Junction temperature 175 ˚C
Drain-source on-state 14 mΩ

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V
I

D

I

D

I

DM

P
T

DS
DGR

tot

stg

GS

, T

j

Drain-source voltage - - 30 V
Drain-gate voltage RGS = 20 kΩ -30V
Gate-source voltage - - 16 V
Drain current (DC) Tmb = 25 ˚C - 69 A
Drain current (DC) Tmb = 100 ˚C - 48 A
Drain current (pulse peak value) Tmb = 25 ˚C - 240 A
Total power dissipation Tmb = 25 ˚C - 125 W
Storage & operating temperature - - 55 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-mb

Thermal resistance junction to - - 1.2 K/W
mounting base

R

th j-a

Thermal resistance junction to in free air 60 - K/W
ambient

ESD LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

December 1997 1 Rev 1.100

Electrostatic discharge capacitor Human body model - 2 kV
voltage, all pins (100 pF, 1.5 kΩ)

Philips Semiconductors Product specification

TrenchMOS transistor BUK7514-30

Standard level FET

STATIC CHARACTERISTICS

Tj= 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

GSS

±V
R

DS(ON)

(BR)GSS

Drain-source breakdown VGS = 0 V; ID = 0.25 mA; 30 - - V
voltage Tj = -55˚C 27 - - V
Gate threshold voltage VDS = VGS; ID = 1 mA 2.0 3.0 4.0 V

Tj = 175˚C 1.0 - - V

Tj = -55˚C - - 4.4 V

Zero gate voltage drain current VDS = 30 V; VGS = 0 V; - 0.05 10 µA

Tj = 175˚C - - 500 µA

Gate source leakage current VGS = ±10 V; VDS = 0 V - 0.02 1 µA

Tj = 175˚C - - 20 µA
Gate-source breakdown IG = ±1 mA; 16 - - V
voltage
Drain-source on-state VGS = 10 V; ID = 25 A - 12 14 mΩ
resistance Tj = 175˚C - - 26 mΩ

DYNAMIC CHARACTERISTICS

Tmb = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g
Q

Q
Q

C
C
C

t
t
t
t

L
L
L

fs

g(tot)
gs
gd

iss
oss
rss

d on
r
d off
f

d

d

s

Forward transconductance VDS = 25 V; ID = 25 A 9 18 - S
Total gate charge ID = 69 A; V

= 24 V; VGS = 10 V - 38 - nC

DD

Gate-source charge - 7 - nC
Gate-drain (Miller) charge - 14 - nC

Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1500 - pF
Output capacitance - 480 - pF
Feedback capacitance - 220 - pF

Turn-on delay time VDD = 25 V; ID = 25 A; - 22 35 ns
Turn-on rise time VGS = 10 V; RG = 5 Ω - 3060ns
Turn-off delay time Resistive load - 40 50 ns
Turn-off fall time - 25 38 ns

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

December 1997 2 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK7514-30

Standard level FET

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

SD

t

rr

Q

rr

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Continuous reverse drain - - 69 A
current
Pulsed reverse drain current - - 240 A
Diode forward voltage IF = 25 A; VGS = 0 V - 0.95 1.2 V

IF = 69 A; VGS = 0 V - 1.0 - V

Reverse recovery time IF = 69 A; -dIF/dt = 100 A/µs; - 60 - ns
Reverse recovery charge VGS = -10 V; VR = 25 V - 0.1 - µC

Drain-source non-repetitive ID = 36 A; VDD ≤ 15 V; - - 125 mJ
unclamped inductive turn-off VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C
energy

December 1997 3 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK7514-30
Standard level FET

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

Zth j-mb / (K/W)

10

D =

1

0.5

0.2

0.1

0.1

0.05

0.02

0.01

0.001

0

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx55-lv

p

p

t

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

100

16

80

12

60

40

20

0

0246810

8

10

VDS / V

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

BUK7514-30

6.5

6

5.5

5

4.4
4

.

GS

ID / A

1000

100

10

1

RDS(ON) = VDS / ID

1 10 100

VDS / V

7514-30

tp = 10 us

100 us

1 ms
10 ms

100 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

p

RDS(ON) / mOhm

40

30

20

10

0

0 20406080100

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

= f(ID); parameter V

DS(ON)

6.565.55

VGS / V =

12

GS

7514-30

8

10

16

.

December 1997 4 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK7514-30
Standard level FET

ID / A

100

80

60

40

20

0

0246810

Tj / C = 25

VGS / V

7514-30

175

Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter T

30

20

10

gfs / S

Tj / C = 25

175

7514-30

j

VGS(TO) / V

5

max.

4

typ.

3

min.

2

1

0

-100 -50 0 50 100 150 200
Tj / C

BUK759-60

Fig.10. Gate threshold voltage.

V

= f(Tj); conditions: ID = 1 mA; VDS = V

GS(TO)

1E-01

1E-02

1E-03

1E-04

2%

Sub-Threshold Conduction

typ

98%

GS

0

0 20406080

Fig.8. Typical transconductance, Tj = 25 ˚C

ID / A

.

gfs = f(ID); conditions: VDS = 25 V

a

2

1.5

1

0.5

0

-100 0 100 200
Tj / C

30V TrenchMOS

15050-50

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

= f(Tj); ID = 25 A; VGS = 10 V

1E-05

1E-06

012345

Fig.11. Sub-threshold drain current.

ID = f(V

C / pF

10000

1000

100

0.1 1 10 100

Fig.12. Typical capacitances, C

; conditions: Tj = 25 ˚C; VDS = V

GS)

VDS / V

, C

iss

7514-30

Ciss

Coss

Crss

, C

oss

GS

rss

.

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

December 1997 5 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK7514-30
Standard level FET

VGS / V

10

8

6

4

2

0

0 10203040

VDS / V = 6 24

QG / nC

7514-30

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); conditions: ID = 69 A; parameter V

100

GS

IF / A

80

60

40

Tj / C = 175

25

DS

7514-30

WDSS%

120
110
100

90
80
70
60
50
40
30
20
10

0

20 40 60 80 100 120 140 160 180

Tmb / C

Fig.15. Normalised avalanche energy rating.

W

% = f(Tmb); conditions: ID = 35 A

DSS

+

L

VDS

VGS

0

T.U.T.

-

VDD

-ID/100

20

0

0 0.5 1 1.5 2

VSDS / V

Fig.14. Typical reverse diode current.

IF = f(V

); conditions: V

SDS

= 0 V; parameter T

GS

RGS

R 01

shunt

Fig.16. Avalanche energy test circuit.

RG

2

D

⋅BV

DSS

/(BV

RD

DSS−VDD

VDS

T.U.T.

)

VDD

+

-

W

= 0.5 ⋅ LI

j

VGS

0

DSS

Fig.17. Switching test circuit.

December 1997 6 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK7514-30

Standard level FET

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for SOT78 (TO220) envelopes.

3. Epoxy meets UL94 V0 at 1/8".

December 1997 7 Rev 1.100

Philips Semiconductors Product specification

TrenchMOS transistor BUK7514-30

Standard level FET

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

December 1997 8 Rev 1.100