Datasheet BUK556-60H Datasheet (Philips)

Philips Semiconductors Product Specification

PowerMOS transistor BUK556-60H
Logic level FET

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT
level field-effectpower transistor in a
plastic envelope. V
The device is intended for use in I
automotive and general purpose P
switching applications. T

D

R

DS

tot
j

DS(ON)

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 60 V
Drain current (DC) 60 A
Total power dissipation 150 W
Junction temperature 175 ˚C
Drain-source on-state 22 mΩ
resistance; VGS = 5 V

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

DS

V

DGR

±VGSGate-source voltage - - 15 V
I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain-source voltage - - 60 V
Drain-gate voltage RGS = 20 kΩ -60V

Drain current (DC) Tmb = 25 ˚C - 60 A
Drain current (DC) Tmb = 100 ˚C - 44 A
Drain current (pulse peak Tmb = 25 ˚C - 240 A
value)
Total power dissipation Tmb = 25 ˚C - 150 W
Storage temperature - - 55 175 ˚C
Junction Temperature - - 175 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-mb
th j-a

From junction to mounting base - - 1.0 K/W
From junction to ambient - 60 - K/W

October 1993 1 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor BUK556-60H

Logic level FET

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 1.0 1.5 2.0 V
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; - 1 10 µA
Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±15 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 5 V; ID = 25 A - 18 22 mΩ
resistance

Forward transconductance VDS = 25 V; ID = 25 A 17 30 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 2200 2800 pF

Output capacitance - 700 1000 pF
Feedback capacitance - 280 400 pF

Turn-on delay time VDD = 30 V; ID = 3 A; - 40 50 ns
Turn-on rise time VGS = 5 V; RGS = 50 Ω; - 150 250 ns
Turn-off delay time R
Turn-off fall time - 190 250 ns

= 50 Ω - 350 450 ns

gen

internal drain inductance Measured from contact screw on - 5 - nH

tab to centre of die

internal drain inductance Measured from drain lead 6 mm - 5 - nH

from package to centre of die

internal source inductance Measured from source lead 6 mm - 12.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tj = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V
t

rr

Q

SD

rr

Continuous reverse drain - - - 60 A
current
Pulsed reverse drain current - - - 240 A
Diode forward voltage IF = 50 A; VGS = 0 V - 1.1 2.0 V

Reverse recovery time IF = 50 A; -dIF/dt = 100 A/µs; - 80 - ns
Reverse recovery charge VGS = -10 V; VR = 30 V - 0.4 - µC

AVALANCHE LIMITING VALUE

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

October 1993 2 Rev 1.000

Drain-source non-repetitive ID = 50 A; VDD ≤ 25 V; - - 150 mJ
unclamped inductive turn-off VGS = 5 V; RGS = 50 Ω; Tmb = 25 ˚C
energy

Philips Semiconductors Product Specification

PowerMOS transistor BUK556-60H
Logic level FET

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140 160 180

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID / IDmax % Normalised Current Derating

120

100

80

60

40

20

0

0 20 40 60 80 100 120 140 160 180

Tmb / C

D 25 ˚C

= f(Tmb)

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

10

1

0.1

0.01

0.001

Zth j-mb / (K/W)

D =

0.5

0.2

0.1

0.05

0.02

0

1E-05 1E-03 1E-01 1E+01

t / s

P

D

BUKx56-lv

p

p

t

t

D =

T

t

T

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A BUK5y6-60A

150

10

8

100

50

0

0 2 4 6 8 10 12

7

VGS / V =

6

5

4.5
4

3.5
3

2.5

VDS / V

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

ID / A

1000

100

RDS(ON) = VDS/ ID

10

1

1 100

DC

10

VDS / V

BUK556-60H

tp = 10 us

100 us

1 ms

10 ms
100 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(ON) / Ohm

0.1

0.08

0.06

0.04

0.02

0

3 3.5 4

0 20 40 60 80 100 120 140

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

BUK5y6-60A

4.5 5

6

7

VGS / V = 10

.

GS

October 1993 3 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor BUK556-60H
Logic level FET

ID / A BUK5y6-60A

150

Tj / C = 25

100

50

0

0 2 4 6 8 10

VGS / V

150

Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter T

gfs / S BUK5y6-60A

40
35
30
25
20
15
10

5
0

0 20 40 60 80 100

Fig.8. Typical transconductance, Tj = 25 ˚C

ID / A

.

gfs = f(ID); conditions: VDS = 15 V

VGS(TO) / V

2

1

0

-60 -20 20 60 100 140 180

max.

typ.

min.

Tj / C

Fig.10. Gate threshold voltage.

V

j

= f(Tj); conditions: ID = 1 mA; VDS = V

GS(TO)

ID / A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

0 0.4 0.8 1.2 1.6 2 2.4

SUB-THRESHOLD CONDUCTION

2 %

typ

VGS / V

GS

98 %

Fig.11. Sub-threshold drain current.

ID = f(V

; conditions: Tj = 25 ˚C; VDS = V

GS)

GS

a

2.0

1.5

1.0

0.5

0

-60 -20 20 60 100 140 180

Normalised RDS(ON) = f(Tj)

Tj / C

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

= f(Tj); ID = 25 A; VGS = 5 V

C / pF

10000

1000

100

10

0 20 40

VDS / V

Fig.12. Typical capacitances, C

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

BUK5y6-60A

, C

iss

oss

Ciss

Coss
Crss

, C

rss

.

October 1993 4 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor BUK556-60H
Logic level FET

VGS / V BUK5y6-60A

10

9
8
7
6
5
4
3
2
1
0

0 20 40 60 80

VDS / V =12

QG / nC

48

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); conditions: ID = 50 A; parameter V

GS

IF / A BUK5y6-60A

200

150

100

50

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Tj / C = 25

VSDS / V

150

DS

Fig.14. Typical reverse diode current.

IF = f(V

); conditions: V

SDS

= 0 V; parameter T

GS

j

WDSS%

120
110
100

90
80
70
60
50
40
30
20
10

0

20 40 60 80 100 120 140 160 180

Tmb / C

Fig.15. Normalised avalanche energy rating.

W

% = f(Tmb); conditions: ID = 50 A

DSS

+

L

VDS

VGS

DSS

T.U.T.

/(BV

0

RGS

Fig.16. Avalanche energy test circuit.

W

= 0.5 ⋅ LI

DSS

2

D

⋅ BV

DSS−VDD

-

R 01

shunt

)

VDD

-ID/100

October 1993 5 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor BUK556-60H

Logic level FET

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.17. TO220AB; pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for TO220 envelopes.

3. Epoxy meets UL94 V0 at 1/8".

October 1993 6 Rev 1.000

Philips Semiconductors Product Specification

PowerMOS transistor BUK556-60H

Logic level FET

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1993 7 Rev 1.000