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BUK475-60A
Datasheet (Philips)
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Datasheet BUK475-60B, BUK475-60A Datasheet (Philips)

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Page 1
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60A/B Isolated version of BUK455-60A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. The BUK475 -60A -60B deviceisintendedforuseinSwitched V Mode Power Supplies (SMPS), I motor control, welding, DC/DC and P AC/DCconverters,andinautomotive T and general purpose switching R applications. resistance
D
tot j
DS(ON)

PINNING - SOT186A PIN CONFIGURATION SYMBOL

Drain-source voltage 60 60 V Drain current (DC) 21 20 A Total power dissipation 30 30 W Junction temperature 150 150 ˚C Drain-source on-state 0.038 0.045 Ω
PIN DESCRIPTION
case
d
1 gate 2 drain 3 source
case isolated
123
g
s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
DGR
±V
GS
Drain-source voltage - - 60 V Drain-gate voltage RGS = 20 kΩ -60V Gate-source voltage - - 30 V
-60A -60B
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC) Ths = 25 ˚C - 21 20 A Drain current (DC) Ths = 100 ˚C - 13 12.6 A Drain current (pulse peak value) Ths = 25 ˚C - 84 80 A
Total power dissipation Ths = 25 ˚C - 30 W Storage temperature - - 55 150 ˚C Junction temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R R
th j-hs
th j-a
Thermal resistance junction to with heatsink compound - - 4.17 K/W heatsink Thermal resistance junction to - 55 - K/W ambient
November 1996 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60A/B

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 60 - - V voltage Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA Zero gate voltage drain current VDS = 60 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA Drain-source on-state VGS = 10 V; BUK475-60A - 0.03 0.038 Ω resistance ID = 20 A BUK475-60B - 0.04 0.045 Ω
Forward transconductance VDS = 25 V; ID = 20 A 8 13.5 - S Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1650 2000 pF
Output capacitance - 560 750 pF Feedback capacitance - 300 400 pF
Turn-on delay time VDD = 30 V; ID = 3 A; - 25 40 ns Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 60 90 ns Turn-off delay time R Turn-off fall time - 100 130 ns
= 50 Ω - 125 160 ns
gen
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V three terminals to external waveform; heatsink R.H. ≤ 65% ; clean and dustfree
C
isol
Capacitance from T2 to external f = 1 MHz - 10 - pF heatsink

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I I
V t
Q
DR
DRM
rr
rr
Continuous reverse drain - - - 21 A current Pulsed reverse drain current - - - 84 A Diode forward voltage IF = 21 A ; VGS = 0 V - 1.4 1.8 V
Reverse recovery time IF = 21 A; -dIF/dt = 100 A/µs; - 60 - ns Reverse recovery charge VGS = 0 V; VR = 30 V - 0.25 - µC
November 1996 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60A/B

AVALANCHE LIMITING VALUE

Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
W
DSS
Drain-source non-repetitive ID = 41 A ; VDD ≤ 25 V ; - - 100 mJ unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω energy
PD%
120 110 100
90 80 70 60 50 40 30 20 10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120 110 100
90 80 70 60 50 40 30 20 10
0
0 20 40 60 80 100 120 140
with heatsink compound
Ths / C
= f(Ths)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Ths); conditions: VGS ≥ 10 V
D 25 ˚C
ID / A
1000
100
RDS(ON) = VDS/ID
10
1
0.1
0.1 1 10 100 1000
A B
DC
VDS / V
BUK445-60
tp = 10 us 100 us 1 ms
10 ms 100 ms
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
Zth / (K/W)
10
D =
0.5
1
0.2
0.1
0.05
0.1
0.02
t / s
P
D
0.01
0.001
0
1E-07 1E-05 1E-03 1E-01 1E+01
BUKx45-lv
p
p
t
t
D =
T
t
T
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
p
November 1996 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60A/B
ID / A
80 70 60 50 40 30 20 10
0
20
15
0 2 4 6 8 10
10
VDS / V
BUK455-50A
VGS / V =
8
7
6
5 4
Fig.5. Typical output characteristics, Tj = 25 ˚C
RDS(ON) / Ohm
0.20
0.15
0.10
ID = f(VDS); parameter V
5 5.5 6 6.5
4.5
7
GS
BUK455-50A
7.5 8
gfs / S
15
10
5
0
0 20 40 60 80
.
Fig.8. Typical transconductance, Tj = 25 ˚C
ID / A
BUK455-50A
.
gfs = f(ID); conditions: VDS = 25 V
a
1.5
1.0
Normalised RDS(ON) = f(Tj)
0.05
0
0 20 40 60 80
VGS / V =
ID / A
10
20
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
= f(ID); parameter V
DS(ON)
ID / A
80 70 60 50 40 30 20 10
0
0 2 4 6 8 10
Tj / C =
VGS / V
GS
BUK455-50A
25
150
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter T
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140
.
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 ˚C
VGS(TO) / V
4
3
2
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Tj / C
= f(Tj); ID = 20 A; VGS = 10 V
max.
typ.
min.
Tj / C
Fig.10. Gate threshold voltage.
V
j
= f(Tj); conditions: ID = 1 mA; VDS = V
GS(TO)
GS
November 1996 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60A/B
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
0 1 2 3 4
SUB-THRESHOLD CONDUCTION
2 %
VGS / V
typ
98 %
Fig.11. Sub-threshold drain current.
ID = f(V
10000
1000
100
10
Fig.12. Typical capacitances, C
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
; conditions: Tj = 25 ˚C; VDS = V
GS)
C / pF
0 20 40
VDS / V
, C
iss
BUKxy5-50
Ciss
Coss Crss
, C
oss
GS
rss
IF / A
100
50
Tj / C = 150 25
0
0 1 2
VSDS / V
BUK455-50A
Fig.14. Typical reverse diode current.
IF = f(V
120 110 100
90 80 70 60 50 40 30 20 10
.
Fig.15. Normalised avalanche energy rating.
); conditions: V
SDS
WDSS%
0
20 40 60 80 100 120 140
W
% = f(Ths); conditions: ID = 41 A
DSS
= 0 V; parameter T
GS
Ths / C
j
VGS / V
12
10
8
6
4
2
0
0 10 20 30 40
QG / nC
VDS / V =12
Fig.13. Typical turn-on gate-charge characteristics.
V
= f(QG); conditions: ID = 41 A; parameter V
GS
BUK455-60
48
DS
L
VDS
VGS
DSS
T.U.T.
/(BV
0
RGS
Fig.16. Avalanche energy test circuit.
W
= 0.5 ⋅LI
DSS
D
2
⋅ BV
R 01
shunt
DSS−VDD
VDD
+
-
-ID/100
)
November 1996 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60A/B

MECHANICAL DATA

Dimensions in mm Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5 min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8 max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8 max
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
November 1996 6 Rev 1.200
Page 7
Philips Semiconductors Product specification
PowerMOS transistor BUK475-60A/B

DEFINITIONS

Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1996 7 Rev 1.200
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