Datasheet BUK473-100B Datasheet (Philips)

Philips Semiconductors Product specification

PowerMOS transistor BUK473-100A/B
Isolated version of BUK453-100A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. The BUK473 -100A -100B
deviceisintendedforuseinSwitched V
Mode Power Supplies (SMPS), I
motor control, welding, DC/DC and P
AC/DC converters, and in general R

DS

D

tot

DS(ON)

purpose switching applications. resistance

PINNING - SOT186A PIN CONFIGURATION SYMBOL

Drain-source voltage 100 100 V
Drain current (DC) 9 8 A
Total power dissipation 25 25 W
Drain-source on-state 0.16 0.2 Ω

PIN DESCRIPTION

case

d

1 gate
2 drain
3 source

case isolated

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V

DS
DGR

GS

Drain-source voltage - - 100 V
Drain-gate voltage RGS = 20 kΩ - 100 V
Gate-source voltage - - 30 V

-100A -100B

I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain current (DC) Ths = 25 ˚C - 9 8 A
Drain current (DC) Ths = 100 ˚C - 5.7 5 A
Drain current (pulse peak value) Ths = 25 ˚C - 36 32 A

Total power dissipation Ths = 25 ˚C - 25 W
Storage temperature - - 55 150 ˚C
Junction temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

Thermal resistance junction to with heatsink compound - - 5 K/W
heatsink

R

th j-a

Thermal resistance junction to - 55 - K/W
ambient

November 1996 1 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK473-100A/B

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 100 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj = 25 ˚C - 1 10 µA
Zero gate voltage drain current VDS = 100 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; BUK473-100A - 0.15 0.16 Ω
resistance ID = 5 A BUK473-100B - 0.17 0.2 Ω

Forward transconductance VDS = 25 V; ID = 5 A 4.0 5.5 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 660 825 pF

Output capacitance - 140 200 pF
Feedback capacitance - 60 100 pF

Turn-on delay time VDD = 30 V; ID = 2.9 A; - 10 20 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 25 40 ns
Turn-off delay time R
Turn-off fall time - 40 55 ns

= 50 Ω - 6090ns

gen

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree

C

isol

Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I
I

V
t

Q

DR

DRM

SD

rr

rr

Continuous reverse drain - - - 9 A
current
Pulsed reverse drain current - - - 36 A
Diode forward voltage IF = 9 A ; VGS = 0 V - 1.1 1.3 V

Reverse recovery time IF = 9 A; -dIF/dt = 100 A/µs; - 80 - ns
Reverse recovery charge VGS = 0 V; VR = 30 V - 0.5 - µC

November 1996 2 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK473-100A/B

AVALANCHE LIMITING VALUE

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

W

DSS

Drain-source non-repetitive ID = 14 A ; VDD ≤ 50 V ; - - 70 mJ
unclamped inductive turn-off VGS = 10 V ; RGS = 50 Ω
energy

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

with heatsink compound

Ths / C

= f(Ths)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Ths); conditions: VGS ≥ 10 V

D 25 ˚C

ID / A

100

RDS(ON) = VDS/ID

10

1

0.1
1 100

DC

10

VDS / V

A
B

BUK443-100

tp = 10 us

100 us

1 ms
10 ms

100 ms

Fig.3. Safe operating area. Ths = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

1E+01

Zth j-hs / (K/W)

0.5

1E+00

0.2

0.1

0.05

1E-01

0.02

P

D

0

1E-02

1E-07 1E-05 1E-03 1E-01 1E+01

t / s

t

p

T

ZTHX43

p

t

D =

T

t

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-hs

p

November 1996 3 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK473-100A/B

ID / A

28
24
20
16
12

8
4
0

0 2 4 6 8 10

VGS / V =

20

15

VDS / V

BUK453-100A

10

8

7

6

5

4

Fig.5. Typical output characteristics, Tj = 25 ˚C

RDS(ON) / Ohm

1.0

0.8

0.6

0.4

0.2

ID = f(VDS); parameter V

5 5.5 6

4.5

6.5

VGS / V =

7

GS

BUK453-100A

7.5
8

10

20

gfs / S

7
6
5
4
3
2
1
0

0 4 8 12 16 20 24 28

.

Fig.8. Typical transconductance, Tj = 25 ˚C

ID / A

BUK453-100A

.

gfs = f(ID); conditions: VDS = 25 V

2.0

1.5

1.0

0.5

a

Normalised RDS(ON) = f(Tj)

0

0 4 8 12 16 20 24 28

ID / A

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

= f(ID); parameter V

DS(ON)

ID / A

28
24
20
16
12

8
4
0

0 2 4 6 8 10

Tj / C = 25

VGS / V

GS

BUK453-100A

150

Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter T

0

-60 -40 -20 0 20 40 60 80 100 120 140

.

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

VGS(TO) / V

4

3

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

Tj / C

= f(Tj); ID = 5 A; VGS = 10 V

max.

typ.

min.

Tj / C

Fig.10. Gate threshold voltage.

V

j

= f(Tj); conditions: ID = 1 mA; VDS = V

GS(TO)

GS

November 1996 4 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK473-100A/B

ID / A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

0 1 2 3 4

SUB-THRESHOLD CONDUCTION

2 %

VGS / V

typ

98 %

Fig.11. Sub-threshold drain current.

ID = f(V

10000

1000

100

10

Fig.12. Typical capacitances, C

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

; conditions: Tj = 25 ˚C; VDS = V

GS)

C / pF

0 20 40

VDS / V

BUK4y3-100

, C

iss

oss

Ciss

Coss
Crss

, C

GS

rss

IF / A

30

20

10

Tj / C = 150 25

0

0 1 2

VSDS / V

BUK453-100A

Fig.14. Typical reverse diode current.

IF = f(V

120
110
100

90
80
70
60
50
40
30
20
10

.

Fig.15. Normalised avalanche energy rating.

); conditions: V

SDS

WDSS%

0

20 40 60 80 100 120 140

W

% = f(Ths); conditions: ID = 14 A

DSS

= 0 V; parameter T

GS

Tmb / C

j

VGS / V

12

10

8

6

4

2

0

0 2 4 6 8 10 12 14 16

QG / nC

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); conditions: ID = 14 A; parameter V

GS

BUK453-100

VDS / V =20

80

DS

L

VDS

VGS

DSS

T.U.T.

/(BV

0

RGS

Fig.16. Avalanche energy test circuit.

W

= 0.5 ⋅LI

DSS

2

D

⋅ BV

R 01

shunt

DSS−VDD

VDD

+

-

-ID/100

)

November 1996 5 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK473-100A/B

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10.3

Recesses (2x)

2.5

0.8 max. depth

3 max.

not tinned

13.5
min.

0.4

M

max

3.2

3.0

123

5.08

2.8

2.54

15.8
max.

3

19

max.

seating

plane

0.5

2.5

4.6

max

2.9 max

6.4

0.6

2.5

15.8
max

Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.

1.3

1.0 (2x)

0.9

0.7

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for F-pack envelopes.

3. Epoxy meets UL94 V0 at 1/8".

November 1996 6 Rev 1.200

Philips Semiconductors Product specification

PowerMOS transistor BUK473-100A/B

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

November 1996 7 Rev 1.200