Datasheet BUK456-800B, BUK456-800A Datasheet (Philips)

Philips Semiconductors Product Specification

PowerMOS transistor BUK456-800A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA

N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic envelope. BUK456 -800A -800B
The device is intended for use in V
Switched Mode Power Supplies I
(SMPS), motor control, welding, P
DC/DC and AC/DC converters, and R

DS

D

tot

DS(ON)

in general purpose switching resistance
applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Drain-source voltage 800 800 V
Drain current (DC) 4 3.5 A
Total power dissipation 125 125 W
Drain-source on-state 3 4 Ω

PIN DESCRIPTION

tab

d

1 gate
2 drain
3 source

tab drain

123

g

s

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
±V

DS
DGR

GS

Drain-source voltage - - 800 V
Drain-gate voltage RGS = 20 kΩ - 800 V
Gate-source voltage - - 30 V

-800A -800B

I

D

I

D

I

DM

P

tot

T

stg

T

j

Drain current (DC) Tmb = 25 ˚C - 4.0 3.5 A
Drain current (DC) Tmb = 100 ˚C - 2.5 2.2 A
Drain current (pulse peak value) Tmb = 25 ˚C - 16 14 A

Total power dissipation Tmb = 25 ˚C - 125 W
Storage temperature - - 55 150 ˚C
Junction Temperature - - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R
R

th j-mb

th j-a

Thermal resistance junction to - - 1.0 K/W
mounting base
Thermal resistance junction to - 60 - K/W
ambient

May 1995 1 Rev 1.200

Philips Semiconductors Product Specification

PowerMOS transistor BUK456-800A/B

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

(BR)DSS

V

GS(TO)

I

DSS

I

DSS

I

GSS

R

DS(ON)

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

g

fs

C

iss

C

oss

C

rss

t

d on

t

r

t

d off

t

f

L

d

L

d

L

s

Drain-source breakdown VGS = 0 V; ID = 0.25 mA 800 - - V
voltage
Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V
Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj = 25 ˚C - 2 20 µA
Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA
Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA
Drain-source on-state VGS = 10 V; BUK456-800A - 2.7 3.0 Ω
resistance ID = 1.5 A BUK456-800B - 3.5 4.0 Ω

Forward transconductance VDS = 25 V; ID = 1.5 A 3.0 4.3 - S
Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1000 1250 pF

Output capacitance - 80 120 pF
Feedback capacitance - 30 50 pF

Turn-on delay time VDD = 30 V; ID = 2.3 A; - 10 25 ns
Turn-on rise time VGS = 10 V; RGS = 50 Ω; - 50 70 ns
Turn-off delay time R
Turn-off fall time - 40 60 ns

= 50 Ω - 130 150 ns

gen

Internal drain inductance Measured from contact screw on - 3.5 - nH

tab to centre of die

Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH

from package to centre of die

Internal source inductance Measured from source lead 6 mm - 7.5 - nH

from package to source bond pad

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

DR

I

DRM

V

SD

t

rr

Q

rr

May 1995 2 Rev 1.200

Continuous reverse drain - - - 4.0 A
current
Pulsed reverse drain current - - - 16 A
Diode forward voltage IF = 4.0 A ; VGS = 0 V - 1.0 1.3 V

Reverse recovery time IF = 4.0 A; -dIF/dt = 100 A/µs; - 1800 - ns
Reverse recovery charge VGS = 0 V; VR = 100 V - 12 - µC

Philips Semiconductors Product Specification

PowerMOS transistor BUK456-800A/B

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

Tmb / C

Fig.1. Normalised power dissipation.

PD% = 100⋅PD/P

ID%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Tmb / C

= f(Tmb)

D 25 ˚C

Normalised Current Derating

Fig.2. Normalised continuous drain current.

ID% = 100⋅ID/I

= f(Tmb); conditions: VGS ≥ 10 V

D 25 ˚C

10

1

0.1

0.01

0.001

Zth j-mb / (K/W)

D =

0.5

0.2

0.1

0.05

0.02

0

1E-05 1E-03 1E-01 1E+01

t / s

P

D

p

t

T

BUKx56-hv

p

t

D =

T

t

Fig.4. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-mb

ID / A

8

VGS / V =

6

4

2

0

0 4 8 12 16 20 24 28

VDS / V

BUK4y6-800A

10

6

5

4.8

4.6

4.4

4.2
4

Fig.5. Typical output characteristics, Tj = 25 ˚C

ID = f(VDS); parameter V

GS

.

ID / A

100

A

10

1

0.1
10 100 1000

RDS(ON) = VDS/ID

B

DC

VDS / V

BUK456-800A,B

tp = 10 us

100 us

1 ms

10 ms
100 ms

Fig.3. Safe operating area. Tmb = 25 ˚C

ID & IDM = f(VDS); IDM single pulse; parameter t

RDS(ON) / Ohm

10

4.2

4.4

4.6
VGS / V =

ID / A

8

6

4

2

0

4

0 2 4 6

Fig.6. Typical on-state resistance, Tj = 25 ˚C

R

p

= f(ID); parameter V

DS(ON)

BUK4y6-800A

4.8

5

10

.

GS

May 1995 3 Rev 1.200

Philips Semiconductors Product Specification

PowerMOS transistor BUK456-800A/B

ID / A

8

6

4

2

0

Tj / C =

0 2 4 6 8 10

25

VGS / V

BUK4y6-800A

150

Fig.7. Typical transfer characteristics.

ID = f(VGS) ; conditions: VDS = 25 V; parameter T

gfs / S

7
6
5
4
3
2
1
0

0 2 4 6 8

ID / A

Fig.8. Typical transconductance, Tj = 25 ˚C

BUK4y6-800A

.

gfs = f(ID); conditions: VDS = 25 V

VGS(TO) / V

4

3

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

max.

typ.

min.

Tj / C

Fig.10. Gate threshold voltage.

V

j

= f(Tj); conditions: ID = 1 mA; VDS = V

GS(TO)

ID / A

1E-01

1E-02

1E-03

1E-04

1E-05

1E-06

0 1 2 3 4

SUB-THRESHOLD CONDUCTION

2 %

typ

VGS / V

GS

98 %

Fig.11. Sub-threshold drain current.

ID = f(V

; conditions: Tj = 25 ˚C; VDS = V

GS)

GS

a

2

1

0

-60 -40 -20 0 20 40 60 80 100 120 140

Fig.9. Normalised drain-source on-state resistance.

a = R

DS(ON)/RDS(ON)25 ˚C

Normalised RDS(ON) = f(Tj)

Tj / C

= f(Tj); ID = 1.5 A; VGS = 10 V

C / pF

10000

1000

100

10

0 20 40

VDS / V

Fig.12. Typical capacitances, C

C = f(VDS); conditions: VGS = 0 V; f = 1 MHz

BUK4y6-800

, C

iss

oss

Ciss

Coss
Crss

, C

rss

.

May 1995 4 Rev 1.200

Philips Semiconductors Product Specification

PowerMOS transistor BUK456-800A/B

VGS / V

12

10

8

6

4

2

0

0 20 40

QG / nC

BUK4y6-800

VDS / V =160

640

Fig.13. Typical turn-on gate-charge characteristics.

V

= f(QG); conditions: ID = 4 A; parameter V

GS

DS

IF / A

10

Tj / C = 150 25

5

0

0 1 2

VSDS / V

BUK4y6-800A

Fig.14. Typical reverse diode current.

IF = f(V

); conditions: V

SDS

= 0 V; parameter T

GS

j

May 1995 5 Rev 1.200

Philips Semiconductors Product Specification

PowerMOS transistor BUK456-800A/B

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5

max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.15. TO220AB; pin 2 connected to mounting base.

Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.

2. Refer to mounting instructions for TO220 envelopes.

3. Epoxy meets UL94 V0 at 1/8".

May 1995 6 Rev 1.200

Philips Semiconductors Product Specification

PowerMOS transistor BUK456-800A/B

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

May 1995 7 Rev 1.200