Datasheet BUK446-800B, BUK446-800A Datasheet (Philips)

Page 1
Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT field-effect power transistor in a plastic full-pack envelope. BUK446 -800A -800B The device is intended for use in V Switched Mode Power Supplies I (SMPS), motor control, welding, P DC/DC and AC/DC converters, and R
DS
D
tot
DS(ON)
in general purpose switching resistance applications.
PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
case
d
1 gate 2 drain 3 source
case isolated
123
g
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V V ±V
DS DGR
GS
Drain-source voltage - - 800 V Drain-gate voltage RGS = 20 k - 800 V Gate-source voltage - - 30 V
-800A -800B
I
D
I
D
I
DM
P
tot
T
stg
T
j
Drain current (DC) Ths = 25 ˚C - 2.0 1.7 A Drain current (DC) Ths = 100 ˚C - 1.3 1.1 A Drain current (pulse peak value) Ths = 25 ˚C - 8 6.8 A
Total power dissipation Ths = 25 ˚C - 30 W Storage temperature - - 55 150 ˚C Junction Temperature - - 150 ˚C
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R R
th j-hs
th j-a
Thermal resistance junction to with heatsink compound - - 4.16 K/W heatsink Thermal resistance junction to - 55 - K/W ambient
May 1995 1 Rev 1.200
Page 2
Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
(BR)DSS
V
GS(TO)
I
DSS
I
DSS
I
GSS
R
DS(ON)
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
g
fs
C
iss
C
oss
C
rss
t
d on
t
r
t
d off
t
f
L
d
L
s
Drain-source breakdown VGS = 0 V; ID = 0.25 mA 800 - - V voltage Gate threshold voltage VDS = VGS; ID = 1 mA 2.1 3.0 4.0 V Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj = 25 ˚C - 2 20 µA Zero gate voltage drain current VDS = 800 V; VGS = 0 V; Tj =125 ˚C - 0.1 1.0 mA Gate source leakage current VGS = ±30 V; VDS = 0 V - 10 100 nA Drain-source on-state VGS = 10 V; BUK446-800A - 2.7 3.0 resistance ID = 1.5 A BUK446-800B - 3.5 4.0
Forward transconductance VDS = 25 V; ID = 1.5 A 3.0 4.3 - S Input capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz - 1000 1250 pF
Output capacitance - 80 120 pF Feedback capacitance - 30 50 pF
Turn-on delay time VDD = 30 V; ID = 2.3 A; - 10 25 ns Turn-on rise time VGS = 10 V; RGS = 50 ; - 50 70 ns Turn-off delay time R Turn-off fall time - 40 60 ns
= 50 - 130 150 ns
gen
Internal drain inductance Measured from drain lead 6 mm - 4.5 - nH
from package to centre of die
Internal source inductance Measured from source lead 6 mm - 7.5 - nH
from package to source bond pad
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
Repetitive peak voltage from all R.H. 65% ; clean and dustfree - 1500 V three terminals to external heatsink
C
isol
Capacitance from T2 to external f = 1 MHz - 12 - pF heatsink
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I I
V t
Q
DR
DRM
SD
rr
rr
Continuous reverse drain - - - 2.0 A current Pulsed reverse drain current - - - 8 A Diode forward voltage IF = 2.0 A ; VGS = 0 V - 1.0 1.3 V
Reverse recovery time IF = 2.0 A; -dIF/dt = 100 A/µs; - 1800 - ns Reverse recovery charge VGS = 0 V; VR = 100 V - 12 - µC
May 1995 2 Rev 1.200
Page 3
Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
PD%
120 110 100
90 80 70 60 50 40 30 20 10
0
0 20 40 60 80 100 120 140
Normalised Power Derating
with heatsink compound
Ths / C
Fig.1. Normalised power dissipation.
PD% = 100⋅PD/P
ID%
120 110 100
90 80 70 60 50 40 30 20 10
0
0 20 40 60 80 100 120 140
with heatsink compound
Ths / C
= f(Ths)
D 25 ˚C
Normalised Current Derating
Fig.2. Normalised continuous drain current.
ID% = 100⋅ID/I
= f(Ths); conditions: VGS ≥ 10 V
D 25 ˚C
t
p
T
BUKx46-hv
t
p
D =
T
t
Zth / (K/W)
10
D =
0.5
1
0.2
0.1
0.05
0.1
0.02
t / s
P
D
0.01
0.001
0
1E-07 1E-05 1E-03 1E-01 1E+01
Fig.4. Transient thermal impedance.
Z
= f(t); parameter D = tp/T
th j-hs
ID / A
8
VGS / V =
6
4
2
0
0 4 8 12 16 20 24 28
VDS / V
BUK4y6-800A
10
6
5
4.8
4.6
4.4
4.2 4
Fig.5. Typical output characteristics, Tj = 25 ˚C
ID = f(VDS); parameter V
GS
.
ID / A
100
10
RDS(ON) = VDS/ID
1
0.1
0.01 10 1000
A
B
DC
100
VDS / V
Fig.3. Safe operating area. Ths = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter t
BUK446-800A,B
tp = 10 us
100 us 1 ms
10 ms 100 ms
RDS(ON) / Ohm
10
4.2
4.4
4.6 VGS / V =
ID / A
8
6
4
2
0
4
0 2 4 6
Fig.6. Typical on-state resistance, Tj = 25 ˚C
R
p
= f(ID); parameter V
DS(ON)
BUK4y6-800A
4.8
5
10
.
GS
May 1995 3 Rev 1.200
Page 4
Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
ID / A
8
6
4
2
0
Tj / C =
0 2 4 6 8 10
25
VGS / V
BUK4y6-800A
150
Fig.7. Typical transfer characteristics.
ID = f(VGS) ; conditions: VDS = 25 V; parameter T
gfs / S
7 6 5 4 3 2 1 0
0 2 4 6 8
ID / A
Fig.8. Typical transconductance, Tj = 25 ˚C
BUK4y6-800A
.
gfs = f(ID); conditions: VDS = 25 V
VGS(TO) / V
4
3
2
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
max.
typ.
min.
Tj / C
Fig.10. Gate threshold voltage.
V
j
= f(Tj); conditions: ID = 1 mA; VDS = V
GS(TO)
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
0 1 2 3 4
SUB-THRESHOLD CONDUCTION
2 %
typ
VGS / V
GS
98 %
Fig.11. Sub-threshold drain current.
ID = f(V
; conditions: Tj = 25 ˚C; VDS = V
GS)
GS
a
2
1
0
-60 -40 -20 0 20 40 60 80 100 120 140
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)/RDS(ON)25 ˚C
Normalised RDS(ON) = f(Tj)
Tj / C
= f(Tj); ID = 1.5 A; VGS = 10 V
C / pF
10000
1000
100
10
0 20 40
VDS / V
Fig.12. Typical capacitances, C
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
BUK4y6-800
, C
iss
oss
Ciss
Coss Crss
, C
rss
.
May 1995 4 Rev 1.200
Page 5
Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
VGS / V
12
10
8
6
4
2
0
0 20 40
QG / nC
BUK4y6-800
VDS / V =160
640
Fig.13. Typical turn-on gate-charge characteristics.
V
= f(QG); conditions: ID = 4 A; parameter V
GS
DS
IF / A
10
Tj / C = 150 25
5
0
0 1 2
VSDS / V
BUK4y6-800A
Fig.14. Typical reverse diode current.
IF = f(V
); conditions: V
SDS
= 0 V; parameter T
GS
j
May 1995 5 Rev 1.200
Page 6
Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
3.5 max
not tinned
10.2 max
5.7
max
3.2
3.0
4.4
0.9
0.5
4.4
4.0
seating
plane
13.5 min
4.4
max
2.9 max
7.9
7.5 17
max
123
M
0.4
5.08
Fig.15. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide.
2. Refer to mounting instructions for F-pack envelopes.
3. Epoxy meets UL94 V0 at 1/8".
0.9
0.7
2.54
top view
0.55 max
1.3
May 1995 6 Rev 1.200
Page 7
Philips Semiconductors Product Specification
PowerMOS transistor BUK446-800A/B
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
May 1995 7 Rev 1.200
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