Datasheet BUK1M200-50SDLD Datasheet (Philips)

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BUK1M200-50SDLD

Quad channel TOPFET™

Rev. 01 — 02 April 2003 Product data

1. Product proﬁle

1.1 Description

Quad temperature and overload protected logic level power MOSFET in TOPFET™ technology in a 20-pin surface mount plastic package.

Product availability:

BUK1M200-50SDLD in SOT163-1 (SO20).

1.2 Features

■ Power TrenchMOS™ ■ 5 V logic compatible input level

■ Overtemperature protection ■ Current limiting

■ Overload protection ■ ESD protection for all pins

■ Input-source voltage resets latched

protection circuitry.

■ Input used to control output stage and

supply overload protection circuits

■ Overfatigue clamping for turn off of

inductive loads

■ Low operating input current permits

direct drive by micro-controller.

1.3 Applications

■ Low-side driver ■ DC switching

■ Low frequency Pulse Width

Modulation

■ General purpose switch for driving

lamps, motors, solenoids and heaters.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Min Max Unit

R

DSon

P

tot

T

j

V

DS

[1] All devices active

drain-source on-state resistance - 200 mΩ total power dissipation junction temperature - 150 °C drain-source voltage - 50 V

[1]

- 9.4 W

Philips Semiconductors

2. Pinning information

BUK1M200-50SDLD

Quad channel TOPFET™

book, halfpage

20

110

Top view

MGX361

11

D1I1

P

S1

D2I2

P

S2

D3I3

P

S3

Fig 1. Pinning; SOT163-1 (SO20). Fig 2. Symbol; Quad channel low-side TOPFET

2.1 Pin description

Table 2: Pin description

Symbol Pin Description

n.c. 1, 11, 10, 20 not connected D1 2,19 drain 1 I1 3 input 1 D2 4,17 drain 2 I2 5 input 2 D3 6,15 drain 3 I3 7 input 3 D4 8, 13 drain 4 I4 9 input 4 S4 12 source 4 S3 14 source 3 S2 16 source 2 S1 18 source 1

D4I4

P

S4

MBL801

TM

9397 750 10956

Product data Rev. 01 — 02 April 2003 2 of 14

Philips Semiconductors

3. Block diagram

BUK1M200-50SDLD

Quad channel TOPFET™

2,19

CHANNEL 1

I1

3

SHORT CIRCUIT

VOLTAGE

REGULATOR

5

I2

7

I3

9

I4

PROTECTION

TEMPERATURE

R

OVER

CHANNEL 2

internal circuitry

identical to

CHANNEL1

CHANNEL 3

internal circuitry

identical to

CHANNEL1

CHANNEL 4

internal circuitry

identical to

CHANNEL1

IG

OVER

VOLTAGE

CONTROL

LOGIC

18

gate sense

CROWBAR

AND

CURRENT

LIMIT

4,17

16

6,15

14

8,13

12

D1

S1

D2

S2

D3

S3

D4

S4

BUK1M200-50SDLD

03pb05

Fig 3. Elements of the quad channel TOPFET switch.

9397 750 10956

Product data Rev. 01 — 02 April 2003 3 of 14

Philips Semiconductors

BUK1M200-50SDLD

Quad channel TOPFET™

4. Limiting values

Table 3: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V I P I T T

DS

I

tot

IMS

stg j

drain-source voltage input current clamping - 3 mA total power dissipation Tsp≤ 25 °C; Figure 4 non-repetitive peak input current tp≤ 1 ms - 10 mA storage temperature −55 +150 °C junction temperature normal operation

Overvoltage clamping

E

DS(CL)S

non-repetitive drain-source clamping energy

E

DS(CL)R

repetitive drain-source clamping energy

Overload protection

V

DS(prot)

protected drain-source voltage VIS≥ 4V - 35 V

[6]

Reverse diode

I

S

source (diode forward) current Tsp≤ 25 °C; VIS=0V - 2 A

Electrostatic discharge

V

esd

electrostatic discharge voltage C = 250 pF; R = 1.5 kΩ -2kV

[4]

T

=25°C; IDM≤ I

amb

(refer to Table 5);

D(lim)

inductive load Tsp≤ 125 °C; IDM= 50 mA; f = 250 Hz

[1]

-50V

[2]

- 9.4 W

[3]

- 150 °C

[5]

- 100 mJ

[5]

-5mJ

[1] Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. [2] For all devices active. [3] Not in an overload condition with drain current limiting. [4] At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. [5] Single active device. [6] With the protectionsupply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by

means of drain current limiting and by activating the overtemperature protection.

9397 750 10956

Product data Rev. 01 — 02 April 2003 4 of 14

Philips Semiconductors

BUK1M200-50SDLD

Quad channel TOPFET™

120

P

der

(%)

80

40

0

0 50 100 150 200

P

tot

P

der

-----------------------

P

tot 25 C°()

100%×=

03aa17

Tsp (°C)

Fig 4. Normalized total power dissipation as a function of solder point temperature.

5. Thermal characteristics

Table 4: Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

R

th(j-sp)

thermal resistancefrom junction to solder point.

mounted on thermo clad board

one device active - - 45 K/W all devices active - - 13.3 K/W

9397 750 10956

Product data Rev. 01 — 02 April 2003 5 of 14

Philips Semiconductors

BUK1M200-50SDLD

Quad channel TOPFET™

6. Static characteristics

Table 5: Static characteristics

Limits are valid for−40°C≤T

Symbol Parameter Conditions Min Typ Max Unit

Off-state output characteristics

V

DS(CL)

I

DSS

drain-source clamping voltage VIS=0V; ID=10mA 50 - - V

drain-source leakage current VIS=0V; VDS=40V - - 100 µA

On-state output characteristic

R

DSon

Input characteristics

V

IS(th)

I

IS

V

IS(rst)

t

rst(latch)

V

IS(CL)

R

IG

drain-source on-state resistance VIS≥ 4 V; tp≤ 300 µs; δ≤0.01;

[1]

input-source threshold voltage VDS=5V;ID= 1 mA 0.6 - 2.4 V

input-source current normal operation

input-source reset voltage t latch reset time input-source clamping voltage II= 1.5 mA; Figure 16 5.5 - 8.5 V input-gate resistance

Overload protection characteristic

I

D(lim)

drain current limiting VIS=5V;Figure 18 0.8 1.3 1.7 A

Short circuit load protection characteristics

P T

d(sc)

OV(th)

overload power threshold VIS=5V short circuit response time VIS=5V;Figure 14

Overtemperature protection characteristic

T

j(th)

threshold junction temperature 4 V ≤ VIS≤ 5.5 V; ID≥ 280 mA or

Source-drain diode characteristic

V

SD

source-drain (diode forward) voltage

≤

+150°C and typical values for Tsp=25°C unless otherwise speciﬁed.

sp

=0V; ID= 200 mA; tp≤ 300 µs;

V

IS

50 62 70 V

δ≤0.01; Figure 16

=25°C; Figure 17 - 0.05 10 µA

T

sp

- - 380 mΩ

= 100 mA; Figure 5 and 6

I

D

T

=25°C - 150 200 mΩ

sp

=25C;Figure 10 1.1 1.6 2.1 V

T

sp

= 5 V 100 220 400 µA

V

IS

= 4 V 80 195 330 µA

V

IS

protection latched

= 5 V 200 400 650 µA

V

IS

=3V;Figure 11 and 12 130 250 430 µA

V

IS

≥ 100 µs; Figure 15

rst

[4]

= 4.5 V 0.7 - - A

V

IS

4V≤ V

≤ 5.5 V; 0.6 - 1.8 A

IS

[2]

1.5 2 2.9 V

[6]

10 40 100 µs

[3]

-33-kΩ

[5]

-17-W

[7]

- 1.6 - ms

150 165 - °C

≥ 100 mV; Figure 9

V

DS

IS= 2 A; VIS=0V; tp= 300 µs - 0.83 1.1 V

[1] The supply for the logic and overload protection is taken from the input. [2] The input voltage below which the overload protection circuits will be reset. [3] Not directly measurable from the device terminals.

9397 750 10956

Product data Rev. 01 — 02 April 2003 6 of 14

Philips Semiconductors

BUK1M200-50SDLD

Quad channel TOPFET™

[4] The TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the

input. [5] Power threshold for protection to operate. [6] To reset the latched state, the input-source voltage is reduced from 5 V to 1 V. [7] Trip time t

varies with overload dissipation POV according to the formula t

(trip)

(trip)=td(sc)

/[POV/P

OV(th)

-1]

2.5 a

2

1.5

1

0.5

0

-50 0 50 100 150

R

DSon

=

a

----------------------------- -

R

DSon 25°C()

03pa71

Tj (°C)

Fig 5. Normalized drain-source on-state resistance

factor as a function of junction temperature.

1.6

(A)

1.2

I

D

V

IS

03pa74

= 7 V

6 V

5 V

500

R

DSon

(mΩ)

375

250

125

0

02468

T

=25°C; ID= 100 mA; tp= 300 µs

j

03pa73

VIS (V)

Fig 6. Drain-source on-state resistance as a function

of input-source voltage; typical values.

1.8

I

(A)

1.2

D

03pa75

0.8

0.4

0

0 102030

Tj=25°C; tp= 300 µsT

Fig 7. Output characteristics; drain current as a

function of drain-source voltage; typical values.

9397 750 10956

4 V

VDS (V)

0.6

0

02468

=25°C; VDS= 10 V; tp= 300 µs

j

VIS (V)

Fig 8. Transfer characteristics; drain current as a

function of input-source voltage; typical values.

Product data Rev. 01 — 02 April 2003 7 of 14

Philips Semiconductors

BUK1M200-50SDLD

Quad channel TOPFET™

200

T

j(th)

(°C)

190

180

170

160

0246810

03pa76

VIS (V)

Fig 9. Overtemperature protection characteristic;

threshold junction temperature as a function of input-source voltage; typical values.

03pa78

I

IS

(mA)

0.8

1

2.5

V

IS(th)

(V)

2

1.5

1

0.5

0

-50 0 50 100 150

max.

typ.

min.

03pa77

Tj (°C)

ID= mA; VDS=5V

Fig 10. Input-source threshold voltage as a function of

junction temperature.

10

I (mA)

I

8

03pa79

0.6

0.4

0.2

0

02468

(1)

(2)

VIS (V)

Tj=25°C (1) Protection latched. (2) Normal operation.

Fig 11. Input-source current as a function of

input-source voltage; typical values.

6

4

2

0

02468

VIS (V)

Tj=25°C

Fig 12. Input clamping characteristic; input current as

a function of input-source voltage; typical values.

9397 750 10956

Product data Rev. 01 — 02 April 2003 8 of 14

Philips Semiconductors

BUK1M200-50SDLD

Quad channel TOPFET™

500

I

IS

(mA)

400

300

200

100

0

−50 0 50 100 150

(1)

(2) (3)

(4)

03pa80

Tj (°C)

(1) VIS= 5 V; device in latched mode. (2) VIS= 3 V; device in latched mode. (3) VIS= 5 V; device in normal mode. (4) VIS= 4 V; device in normal mode.

Fig 13. Input-source current as a function of junction

temperature; typical values.

4000

1 / t

d(sc)

(s-1)

3000

2000

1000

0

0 5.5 11 16.5 22

03pa81

POV (W)

VIS≥ 4 V; Tj≤ 125 °C

Fig 14. Reciprocal of short circuit response time as a

function of total overload power; single device dissipating; typical values

2.4

V

IS(rst)

(V)

2.2

2

1.8

-50 20 90 160

03pa82

Tj (°C)

tr= 100 µsV

Fig 15. Input-source reset voltage as a function of

junction temperature; typical values.

400 I

D

(mA)

300

200

100

0

57 59 61 63 65 67

=0V; tp= 300 µs

IS

Fig 16. Overvoltage clamping characteristic; drain

current as a function of drain-source voltage;

03pa83

VDS (V)

typical values.

9397 750 10956

Product data Rev. 01 — 02 April 2003 9 of 14

Philips Semiconductors

BUK1M200-50SDLD

Quad channel TOPFET™

-5

10 I

DSS

(A)

-6

10

-7

10

-8

10

-50 0 50 100 150

VDS=40V; VIS=0V V

Fig 17. Drain-source leakage current as a function of

junction temperature; typical values.

03pa84

Tj (°C)

1.8

I

D

(A)

1.2

0.6

0

0 40 80 120 160

=5V

IS

max.

typ.

min.

03pa72

Tsp (°C)

Fig 18. Drain current limiting as a function of solder

point temperature.

7. Dynamic characteristics

Table 6: Switching characteristics

Symbol Parameter Conditions Min Typ Max Unit

Turn-on measured from the input going HIGH

t

d(on)

t

r

t

d(off)

t

f

turn-on delay time RL=50Ω; ID= 250 mA; VIS=5V; rise time - 11 30 µs

Figure 19 and 20; T

=25°C

sp

turn-off delay time - 25 65 µs fall time -1435µs

-512µs

V

MBL853

DD

t

d(on)

R

L

V

DS

P

V

IS

V

DS

V

90%

10%

IS

10%

90%

t

f

t

d(off)

t

r

MBL854

Fig 19. Test circuit for resistive load switching times. Fig 20. Resistive load switching waveforms.

9397 750 10956

Product data Rev. 01 — 02 April 2003 10 of 14

Philips Semiconductors

8. Package outline

BUK1M200-50SDLD

Quad channel TOPFET™

SO20: plastic small outline package; 20 leads; body width 7.5 mm

D

c

y

Z

20

pin 1 index

1

e

11

A

2

10

w M

b

p

SOT163-1

E

H

E

Q

A

1

L

p

L

detail X

(A )

A

X

v M

A

3

θ

0 5 10 mm

scale

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

mm

OUTLINE VERSION

SOT163-1

A

A1A2A3b

max.

0.30

2.65

0.10

0.012

0.10

0.004

p

2.45

2.25

0.096

0.089

IEC JEDEC EIAJ

075E04 MS-013

0.25

0.01

0.49

0.36

0.019

0.014

0.013

0.009

UNIT

inches

Note

1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.

(1)E(1) (1)

cD

0.32

13.0

0.23

12.6

0.51

0.49

REFERENCES

eHELLpQ

7.6

7.4

0.30

0.29

1.27

0.050

10.65

10.00

0.419

0.394

1.4

0.055

1.1

0.4

0.043

0.016

1.1

1.0

0.043

0.039

0.25

0.01

EUROPEAN

PROJECTION

0.25 0.1

0.01

0.004

ywv θ

Z

0.9

0.4

0.035

0.016

ISSUE DATE

97-05-22 99-12-27

o

8

o

0

Fig 21. SOT163-1.

9397 750 10956

Product data Rev. 01 — 02 April 2003 11 of 14

Philips Semiconductors

9. Revision history

Table 7: Revision history

Rev Date CPCN Description

01 20030402 - Product datasheet (9397 750 10956)

BUK1M200-50SDLD

Quad channel TOPFET™

9397 750 10956

Product data Rev. 01 — 02 April 2003 12 of 14

Philips Semiconductors

10. Data sheet status

BUK1M200-50SDLD

Quad channel TOPFET™

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation Thisdata sheetcontains data from the preliminary speciﬁcation. Supplementary data will be published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

11. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2][3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a later date. Philips Semiconductors reserves the right to change the speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes at any time in order to improve the design, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, ormask work right infringement, unless otherwise speciﬁed.

13. Trademarks

12. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors

TOPFET — is a trademark of Koninklijke Philips Electronics N.V. TrenchMOS —is a trademark of Koninklijke Philips Electronics N.V.

Contact information

For additional information, please visit http://www.semiconductors.philips.com. For sales ofﬁce addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com. Fax: +31 40 27 24825

9397 750 10956

Product data Rev. 01 — 02 April 2003 13 of 14

Philips Semiconductors

Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

2.1 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2

3 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4

5 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5

6 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6

7 Dynamic characteristics . . . . . . . . . . . . . . . . . 10

8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

9 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

10 Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 13

11 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

BUK1M200-50SDLD

Quad channel TOPFET™

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Date of release: 02 April 2003 Document order number: 9397 750 10956