Datasheet BUJ204AX Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BUJ204AX

Silicon Diffused Power Transistor

Product specification

August 1998

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

GENERAL DESCRIPTION

High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CBO

V

CEO

I

C

I

CM

P

tot

V

CEsat

h

FEsat

t

f

PINNING - SOT186A PIN CONFIGURATION SYMBOL

Collector-emitter voltage peak value VBE = 0 V - 850 V
Collector-Base voltage (open emitter) - 850 V
Collector-emitter voltage (open base) - 450 V
Collector current (DC) - 6 A
Collector current peak value - 10 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Collector-emitter saturation voltage 0.29 1.5 V
DC current gain IC = 4 A; VCE = 5 V 12 ­Fall time Ic=2.5A,IB1=0.5A 88 150 ns

PIN DESCRIPTION

case

c

1 base
2 collector

b

3 emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V
V
V
I

C

I

CM

I

B

I

BM

P
T
T

CESM
CEO
CBO

tot
stg
j

Collector to emitter voltage VBE = 0 V - 850 V
Collector to emitter voltage (open base) - 450 V
Collector to base voltage (open emitter) - 850 V
Collector current (DC) - 6 A
Collector current peak value - 10 A
Base current (DC) - 2 A
Base current peak value - 4 A
Total power dissipation Ths ≤ 25 ˚C - 32 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R
R

th j-hs

th j-a

Junction to heatsink with heatsink compound - 3.95 K/W
Junction to ambient in free air 55 - K/W

123

e

August 1998 1 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

CES

I

CBO

I

CEO

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree

Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

Collector cut-off current

Collector cut-off current

1

1

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
T

= 125 ˚C

j

V

= V

CBO

V

= V

CEO

(850V) - - 0.1 mA

CESMmax

(450V) - - 0.1 mA

CEOMmax

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

I

EBO

V

CEOsust

V

CEsat

V

BEsat

h

FE

h

FE

h

FEsat

Emitter cut-off current VEB = 9 V; IC = 0 A - - 0.1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 450 - - V

L = 25 mH
Collector-emitter saturation voltage IC = 4 A; IB = 0.8 A - 0.29 1.5 V
Base-emitter saturation voltage IC = 4 A; IB = 0.8 A - 1.01 1.3 V
DC current gain IC = 5 mA; VCE = 5 V 10 19 35

IC = 500 mA; VCE = 5 V 14 25 35
DC current gain IC = 2.5 A; VCE = 5 V 14.5 17 19.5

= 4 A; VCE = 5 V - 12 -

I

C

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (resistive load) I

t

on

t

s

t

f

Turn-on time 0.57 0.8 µs
Turn-off storage time 3.4 4 µs
Turn-off fall time 0.34 0.47 µs

Switching times (inductive load) I

t

s

t

f

Turn-off storage time 1.37 1.5 µs
Turn-off fall time 88 150 ns

Switching times (inductive load) I

t

s

t

f

Turn-off storage time - 1.6 µs
Turn-off fall time - 200 ns

= 2.5 A; I

Con

R

= 75 ohms; V

L

= 2.5 A; I

Con

-V

= 5 V

BB

= 2.5 A; I

Con

-V

= 5 V; Tj = 100 ˚C

BB

= -I

Bon

Bon

Bon

= 0.5 A;

Boff

= 4 V;

BB2

= 0.5 A; LB = 1 µH;

= 0.5 A; LB = 1 µH;

1 Measured with half sine-wave voltage (curve tracer).

August 1998 2 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

ICon

90 %

10 %

tf

IBon

30-60 Hz

6V

Fig.1. Test circuit for V

300R

100-200R

Horizontal

Oscilloscope

Vertical

1R

.

CEOsust

+ 50v

Fig.

90 %

IC

ton

IB

10 %

tr 30ns

-IBoff

4.

Switching times waveforms with resistive load.

ts
toff

IC / mA

250
200

100

0

VCE / V

Fig.2. Oscilloscope display for V

VIM
0

tp

T

R

B

min

VCEOsust

VCC

R

L

T.U.T.

CEOsust

VCC

LC

IBon

-VBB

.

= 300 V; -VBE = 5 V; LC = 200 uH; LB = 1 uH

V

CC

IC

IB

Fig.

5.

LB

Test circuit inductive load.

ICon

90 %

10 %

ts
toff

IBon

tf

T.U.T.

t

t

-IBoff

Fig

.3.

Test circuit resistive load. VIM = -6 to +8 V

V

= 250 V; tp = 20 µs; δ = tp / T = 0.01.

R

CC

and RL calculated from I

B

Con

and I

requirements.

Bon

Fig.

6.

Switching times waveforms with inductive load.

August 1998 3 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Fig.

7.

Normalised power dissipation.

PD% = 100

h

FE

100

10

1

0.01 1

P

tot

Ths / C

⋅

PD/PD

Tj = 25 C

0.1 10
IC / A

Normalised Derating

with heatsink compound

= f (Ths)

25˚C

1V

Fig.8. Typical DC current gain. h

parameter V

CE

5V

= f(IC)

FE

VBEsat/V

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0

0.1 1 10

IC/A

Fig.10. Base-Emitter saturation voltage.

Solid lines = typ values, V

VCEsat/V

0.5

0.4

0.3

0.2

0.1

0.0

0.1 1 10

= f(IC); at IC/IB =4.

BEsat

IC/A

Fig.11. Collector-Emitter saturation voltage.

Solid lines = typ values, V

= f(IC); at IC/IB =4.

CEsat

VCEsat/V

2.0

1.6

1.2

0.8

0.4

0.0

0.01 0.10 1.00 10.00

IC=1A 2A

3A 4A

IB/A

Fig.9. Collector-Emitter saturation voltage.

Solid lines = typ values, V

= f(IB); Tj=25˚C.

CEsat

10

0.1

0.01

0.001

Zth / (K/W)

0.5

1

0.2

0.1

0.05

0.02
P

D

D=0

1u 100u 10m 1 100

10u 1m 100m 10

t / s

t

p

T

BU1706AX

D =

Fig.12. Transient thermal impedance.

Z

= f(t); parameter D = tp/T

th j-hs

t

p

T

t

August 1998 4 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

IC (A)

11

10

9

8

7

6

5

4

3

2

1

0

0 100 200 300 400 500 600 700 800 900 1,000

Fig.13. Reverse bias safe operating area. Tj ≤ T

VCEclamp (V)

j max

VCC

LC

IBon

-VBB

LB

VCL

T.U.T.

Fig.14. Test circuit for reverse bias safe operating

area.

Vcl ≤ 1000V; Vcc = 150V; VBB = -5V;

L

= 1µH; Lc = 200µH

B

IC (A)

100

Icm max

10

Duty cycle = 0.01

Ic max

1

0.1

(1)

I

II

(2)

III

0.01
1 10 100 1,000

VCEclamp (V)

Fig.15. Forward bias safe operating area. T

(1) P
(2) Second breakdown limits.

max and P

tot

peak max lines.

tot

I Region of permissible DC operation.
II Extension for repetitive pulse operation.
III Extension during turn-on in single

transistor converters provided that
RBE ≤ 100 Ω and tp ≤ 0.6 µs.

NB: Mounted with heatsink compound and

±

5 newton force on the centre of the

30
envelope.

tp =
10us

100us

0.5ms

2ms

10ms

DC

≤ 25 ˚C

hs

August 1998 5 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

Recesses (2x)

2.5

0.8 max. depth

3 max.

not tinned

13.5
min.

0.4

M

10.3
max

3.2

3.0

123

5.08

2.8

2.54

15.8
max.

3

Fig.16. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

19

max.

seating

plane

0.5

2.5

4.6

max

2.9 max

6.4

0.6

2.5

15.8
max

1.3

1.0 (2x)

0.9

0.7

August 1998 6 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

August 1998 7 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

NOTES

August 1998 8 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

NOTES

August 1998 9 Rev 1.000

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUJ204AX

NOTES

August 1998 10 Rev 1.000

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

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Printed in The Netherlands 135104/204/02/pp12 Date of release: August 1998 Document order number: 9397 750 04386