Page 1
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BUJ101AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
t
f
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Collector-emitter voltage peak value VBE = 0 V - 700 V
Collector-Base voltage (open emitter) - 700 V
Collector-emitter voltage (open base) - 400 V
Collector current (DC) - 0.5 A
Collector current peak value - 1 A
Total power dissipation Tmb ≤ 25 ˚C - 26 W
Collector-emitter saturation voltage IC = 0.2 A;IB =20m A - 1.0 V
Fall time Ic=0.2A,IB1=20mA 40 100 ns
PIN DESCRIPTION
case
c
1 base
2 collector
b
3 emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
C
I
CM
I
B
I
BM
P
T
T
CESM
CEO
CBO
tot
stg
j
Collector to emitter voltage VBE = 0 V - 700 V
Collector to emitter voltage (open base) - 400 V
Collector to base voltage (open emitter) - 700 V
Collector current (DC) - 0.5 A
Collector current peak value - 1 A
Base current (DC) - 0.2 A
Base current peak value - 0.3 A
Total power dissipation Tmb ≤ 25 ˚C - 26 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C
THERMAL RESISTANCES
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
R
R
th j-mb
th j-a
Junction to mounting base - 4.8 K/W
Junction to ambient in free air 55 - K/W
123
e
August 1998 1 Rev 1.000
Page 2
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BUJ101AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
STATIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CES
I
CES
I
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
Repetitive peak voltage from all R.H. ≤ 65% ; clean and dustfree - 1500 V
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz - 12 - pF
heatsink
Collector cut-off current
1
VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C
CESMmax
; - - 1.0 mA
CESMmax
- - 0.1 mA
Emitter cut-off current VEB = 5 V; IC = 0 A - - 1 mA
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 400 - - V
L = 25 mH
Collector-emitter saturation voltage IC = 0.1 A;IB = 10 mA - - 0.8 V
Base-emitter saturation voltage IC = 0.2 A;IB = 20 mA - - 1.0 V
DC current gain IC = 1 mA; VCE = 5 V 10 - 32
DYNAMIC CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
Switching times (resistive load) I
t
on
t
s
t
f
Turn-on time - 0.5 µs
Turn-off storage time - 3.5 µs
Turn-off fall time - 0.3 µs
Switching times (inductive load) I
t
s
t
f
Turn-off storage time - 1.5 µs
Turn-off fall time 40 100 ns
Switching times (inductive load) I
t
s
t
f
Turn-off storage time - 1.8 µs
Turn-off fall time - 200 ns
= 0.2 A; I
Con
RL = 75 ohms; V
= 0.2 A; I
Con
-VBB = 5 V
= 0.2 A; I
Con
-VBB = 5 V; Tj = 100 ˚C
= -I
Bon
Boff
= 4 V;
BB2
= 20 mA; LB = 1 µH;
Bon
= 20 mA; LB = 1 µH;
Bon
= 20 mA;
1 Measured with half sine-wave voltage (curve tracer).
August 1998 2 Rev 1.000
Page 3
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BUJ101AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5
min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8
max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8
max
Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1998 3 Rev 1.000
Page 4
Philips Semiconductors Objective specification
Silicon Diffused Power Transistor BUJ101AX
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
August 1998 4 Rev 1.000
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