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®
HIGH VOLTAGE FAS T-SWITCHING
■ STMicroelectronics PREFE RRED
SALESTYPE
■ HIGH VOLTAGE CAPABILITY
■ NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
■ U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
BUH615D
NPN POWER TRANSISTOR
APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR COLOUR
TV
DESCRIPTION
The BUH615D is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switchi ng speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
ABSOLUTE MAXIMUM RATINGS
3
2
1
ISOWATT218
INTER NAL SCH E M ATI C DIAG RA M
Symbol Parameter Value Unit
V
V
V
I
I
P
T
December 1999
Collector-Base Voltage (IE = 0) 1500 V
CBO
Collector-Emitter Voltage (IB = 0) 700 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 8 A
I
C
Collector Peak Current (tp < 5 ms) 12 A
CM
Base Current 5 A
I
B
Base Peak Current (tp < 5 ms) 8 A
BM
Total Dissipation at Tc = 25 oC55W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
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BUH615D
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
CE(sat)
CES
EBO
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
= 0)
C
∗ Collector-Emitter
= 1500 V
V
CE
V
= 1500 V Tj = 125 oC
CE
= 5 V 300 mA
V
EB
0.2
2
IC = 6 A IB = 2.5 A 1.5 V
Saturation Voltage
∗ Base-Emitter
V
BE(sat)
IC = 6 A IB = 2.5 A 1.3 V
Saturation Voltage
h
∗ DC Current Gain IC = 6 A VCE = 5 V 4 9
FE
RESISTIVE LOAD
t
s
t
f
Storage Time
Fall Time
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
INDUCTIVE LOAD
t
s
t
f
Storage Time
Fall Time
V
= 400 V IC = 6 A
CC
I
= 1.5 A IB2 = -3 A 2.7
B1
I
= 6 A f = 15625 Hz
C
I
= 1.25 A I
B1
V
I
C
I
B1
V
= 1050 sin
ceflyback
= 6 A f = 31250 Hz
= 1.5 A I
= 1200 sin
ceflyback
B2
B2
= -3 A
π
10
= -3 A
π
10
5
10
6
6
t V
t V
190
2.3
350
2.3
200
3.9
280
mA
mA
µs
ns
µs
ns
µs
ns
V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Diode Forward Voltage IF = 5 A 2 V
f
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ISOWATT218 MECHANICAL DATA
BUH615D
DIM.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
- Weight : 4.9 g (typ.)
- Maximum Torque (applied to mounting flange) Recommended: 0.8 Nm; Maximum: 1 Nm
- The side of the dissipator must be flat within 80 µm
P025C/A
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BUH615D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 1999 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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