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HIGH VOLTAGE FAST-SWITCHING
■ STMicroelectronicsPREFERRED
SALESTYPE
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISEDISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
■ NPNTRANSISTORWITH INTEGRATED
FREEWHEELINGDIODE
BUH515D
NPN POWER TRANSISTOR
APPLICATIONS:
■ HORIZONTAL DEFLECTIONFOR COLOUR
TV
DESCRIPTION
The BUH515D is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.
The BUH series is designed for use in horizontal
deflectioncircuits in televisionsand monitors.
ABSOLUTE MAXIMUM RATINGS
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
R Typ. = 12Ω
Symbol Parameter Value Unit
V
V
V
I
I
P
T
November 1999
Collect or-Base Volt age (IE= 0 ) 1500 V
CBO
Collect or-Emitter V oltage (IB= 0 ) 700 V
CEO
Emitter-Base Vol tage (IC=0) 5 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Cu rr ent (tp<5ms) 15 A
CM
Base Current 5 A
I
B
Base P eak Current (tp<5ms) 8 A
BM
Tot al Dissipa t ion at Tc=25oC50W
tot
Storage Temperature -65 to 150
stg
Max. Ope r ating Junc t io n Tempe r ature 150
T
j
o
C
o
C
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BUH515D
THERMAL DATA
R
thj-case
Ther mal Resist ance Junctio n-c a se Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwisespecified)
case
Symbol Parameter Test Cond itions Min. Typ. Max. Unit
I
CES
Collec t or Cut -off
Current (V
I
EBO
Emitt er Cut -of f Current
(I
∗ Collec t or -Emit t er
V
CE(sat)
C
=0)
BE
=0)
V
= 1300 V
CE
= 1500 V
V
CE
= 1500 V Tj=125oC
V
CE
V
=5V 200 mA
EB
IC=5A IB=1.25A 1.5 V
10
0.2
2
Saturation Voltage
∗ Base-Emi tter
V
BE(sat)
IC=5A IB=1.25A 1.3 V
Saturation Voltage
∗ DC Current Ga in IC=5A VCE=5V
h
FE
RESI STIVE LOAD
t
s
t
f
Storage Ti me
Fall Time
INDUCTIV E LOAD
t
V
∗
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Storage Ti me
s
t
Fall Time
f
Diode Forward Voltag e IF=5A 2 V
F
=5A VCE=5V Tj=100oC
I
C
VCC=400V IC=5A
=1.5A IB2=-2.5A 2.4
I
B1
IC= 5 A f = 1562 5 Hz
=1.25A IB2=-2.5A
I
B1
V
ceflyback
=1050sin
5
3
170
3.5
π
6
tV
10
10
450
10
3.6
260
µA
mA
mA
µs
ns
µs
ns
Safe Operating Area Thermal Impedance
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BUH515D
Derating Curve
CollectorEmitterSaturationVoltage
DC Current Gain
BaseEmitterSaturation Voltage
PowerLosses at 16 KHz
SwitchingTime InductiveLoad at 16KHz
(see figure 2)
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BUH515D
SwitchingTime Resistive Load
BASEDRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
has to be provided for the lowest gain hFEat
I
B1
o
100
C (line scan phase). On the other hand,
negative base current I
must be provided to
B2
turn off the power transistor (retrace phase). Most
of the dissipation, especially in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of I
minimizes power losses, fall time t
consequently,T
defined to give total power losses, t
function of I
. A new set of curves have been
j
s
at 16 KHz frequencies for
B2
which
B2
and,
f
and tfas a
choosing the optimum negative drive. The test
circuitis illustrated in fig. 1.
Inductance L
negative base current I
serves to control the slope of the
1
to recombine the
B2
excess carrier in the collector when base current
is still present, this avoid any tailing phenomenon
in the collector current.
The values of L and C are calculated from the
followingequations:
C
)2=
1
2
1
L
√
C(V
C
CEfly
2
)
CEfly
1
L(I
2
ω=2πf=
Where IC= operating collector current, V
flyback voltage, f= frequency of oscillation during
retrace.
=
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Figure1: Inductive Load Switching TestCircuit
Figure2: SwitchingWaveformsin a Deflection Circuit
BUH515D
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BUH515D
ISOWATT218MECHANICAL DATA
DIM.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
- Weight: 4.9g (typ.)
- MaximumTorque(applied to mounting flange) Recommended: 0.8 Nm; Maximum:1 Nm
- Theside of thedissipatormust be flat within 80 µm
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P025C/A
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BUH515D
Information furnished is believed to beaccurate and reliable. However, STMicroelectronics assumes noresponsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – AllRights Reserved
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