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HIGH VOLTAGE FAST-SWITCHING
■ HIGH VOLTAGECAPABILITY
■ U.L.RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734(N)).
APPLICATIONS:
■ HORIZONTAL DEFLECTION FOR COLOUR
TV AND MONITORS
■ SWITCHMODEPOWER SUPPLIES
BUH515
NPN POWER TRANSISTOR
3
2
1
DESCRIPTION
ISOWATT218
The BUH515 is manufacturedusing Multiepitaxial
Mesa technology for cost-effective high
performanceand usesa Hollow Emitterstructure
to enhance switching speeds.
The BUH series is designed for use in horizontal
deflectioncircuits in televisionsand monitors.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
V
V
I
I
P
T
Collect or-Base Vol tage (IE= 0 ) 1500 V
CBO
Collect or-Emitter V oltage (IB= 0 ) 700 V
CEO
Emitter-Base Volt age (IC=0) 10 V
EBO
Collect or Current 8 A
I
C
Collect or Peak Cu rrent (tp<5ms) 12 A
CM
Base Current 5 A
I
B
Base P eak Current (tp<5ms) 8 A
BM
Tot al Dissipa t io n at Tc=25oC50W
tot
Storage Temperature -65 to 150
stg
Max. Ope rating Jun ct ion Tem pe r ature 150
T
j
o
C
o
C
November 1999
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BUH515
THERMAL DATA
R
thj-case
Ther mal Resist ance Junctio n-c a se Max 2.5
o
C/W
ELECTRICAL CHARACTERISTICS (T
=25oC unlessotherwise specified)
case
Symbol Parameter Test Cond ition s Min. Typ. Max. Un it
I
CES
I
EBO
V
CEO(sus)
Collec t or Cut -off
Current (V
BE
=0)
Emitt er Cut-off Current
=0)
(I
C
∗ Co llector-Emit t er
V
= 1500 V
CE
= 1500 V Tj=125oC
V
CE
V
=5V 100 µA
EB
I
= 10 0 m A 700 V
C
0.2
2
Sust aining Voltage
=0)
(I
B
V
EBO
Emitter-Base Voltage
(I
∗ Collec t or -Emit t er
V
CE(sat)
C
=0)
I
=10mA 10 V
E
IC=5A IB=1.25A 1.5 V
Saturation Voltage
∗ Base-Emi tter
V
BE(sat)
IC=5A IB=1.25A 1.3 V
Saturation Voltage
∗ DC Current Gain IC=5A VCE=5V
h
FE
t
t
t
t
RESI STIVE LOAD
Storage Tim e
s
Fall Time
f
INDUCTIVE LOAD
Storage Tim e
s
Fall Time
f
=5A VCE=5V Tj=100oC
I
C
VCC=400V IC=5A
=1.25A IB2= 2.5 A 2.7
I
B1
IC= 5 A f = 15625 Hz
=1.25A IB2=-1.5A
I
B1
V
ceflyback
=1050sin
6
4
190
2.3
π
6
tV
10
5
350
12
3.9
280
mA
mA
µs
ns
µs
ns
INDUCTIVE LOAD
s
t
f
Storage Tim e
Fall Time
t
∗
Pulsed: Pulse duration = 300 µs, duty cycle1.5 %
IC= 5A f = 31250 Hz
=1.25A IB2=-1.5A
I
B1
π
V
ceflyback
=1200sin
6
10
5
tV
Safe OperatingArea ThermalImpedance
2/7
2.3
200
µs
ns
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BUH515
Derating Curve
CollectorEmitter SaturationVoltage
DC Current Gain
BaseEmitter Saturation Voltage
PowerLosses at 16 KHz
SwitchingTime InductiveLoad at 16KHz
(see figure2)
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BUH515
PowerLosses at 32 KHz SwitchingTime InductiveLoad at 32 KHz
(see figure2)
ReverseBiased SOA Switching Time ResistiveLoad
BASEDRIVE INFORMATION
In order to saturate the power switch and reduce
conduction losses, adequate direct base current
I
has to be provided for the lowest gain hFEat
B1
o
100
C (line scan phase). On the other hand,
negative base current I
must be provided to
B2
turn off the power transistor(retrace phase).
Most of the dissipation, in the deflection
application, occurs at switch-off. Therefore it is
essential to determine the value of I
minimizes power losses, fall time t
consequently,T
defined to give total power losses, t
function of I
. A new set of curves have been
j
s
at both 16 KHz and 32 KHz
B2
which
B2
and,
f
and tfas a
scanning frequencies for choosing the optimum
negative drive. The test circuit is illustrated in
4/7
figure 1.
Inductance L
negative base current I
serves to control the slope of the
1
to recombine the
B2
excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenonin the collectorcurrent.
The values of L and C are calculated from the
followingequations:
C
)2=
1
2
C(V
CEfly
2
)
ω=2π
1
f
=
√
L
C
CEfly
1
L(I
2
Where IC= operating collector current, V
flyback voltage, f= frequency of oscillation during
retrace.
=
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Figure1: InductiveLoadSwitching TestCircuits.
Figure2: Switching Waveformsin a Deflection Circuit
BUH515
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BUH515
ISOWATT218MECHANICAL DATA
DIM.
A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122
D1 1.88 2.08 0.074 0.082
E 0.75 0.95 0.030 0.037
F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083
G 10.80 11.20 0.425 0.441
H 15.80 16.20 0.622 0.638
L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817
N 2.1 2.3 0.083 0.091
R 4.6 0.181
DIA 3.5 3.7 0.138 0.146
MIN. TYP. MAX. MIN. TYP. MAX.
mm inch
- Weight: 4.9 g (typ.)
- Maximum Torque (applied to mountingflange) Recommended: 0.8 Nm; Maximum:1 Nm
- The side of thedissipator must beflatwithin 80 µm
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P025C/A
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BUH515
Information furnished isbelieved tobeaccurate andreliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise underany patent or patent rights of STMicroelectronics. Specification mentioned inthis publication are
subject tochange without notice. This publication supersedes andreplaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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