Datasheet BUH315D Datasheet (SGS Thomson Microelectronics)



HIGH VOLTAGE FAST-SWITCHING

■ STMicroelectronicsPREFERRED

SALESTYPE

■ HIGH VOLTAGECAPABILITY

■ U.L.RECOGNISEDISOWATT218 PACKAGE

(U.L. FILE # E81734 (N))

■ NPNTRANSISTORWITH INTEGRATED

FREEWHEELINGDIODE.

BUH315D

NPN POWER TRANSISTOR

APPLICATIONS

■ HORIZONTAL DEFLECTIONFOR COLOUR

TV

DESCRIPTION

The BUH315D is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structureto enhance switching speeds.

The BUH series is designed for use in horizontal
deflectioncircuits in televisionsand monitors.

ABSOLUTE MAXIMUM RATINGS

3

2

1

ISOWATT218

INTERNAL SCHEMATIC DIAGRAM

Symbol Parameter Value Unit

V
V
V

I

I
P

T

December 1999

Collect or-Base Volt age (IE= 0 ) 1500 V

CBO

Collect or-Emitter V oltage (IB= 0 ) 700 V

CEO

Emitter-Base Vol tage (IC=0) 10 V

EBO

Collect or Current 6 A

I

C

Collect or Peak Cu rr ent (tp<5ms) 12 A

CM

Base Current 3 A

I

B

Base P eak Current (tp<5ms) 5 A

BM

Tot al Dissipa t ion at Tc=25oC44W

tot

Storage Temperature -65 to 150

stg

Max. Ope r ating Junc t io n Tempe r ature 150

T

j

o

C

o

C

1/7

BUH315D

THERMAL DATA

R

thj-case

Ther mal Resist ance Junctio n-c a se Ma x 2.8

o

C/W

ELECTRICAL CHARACTERISTICS (T

=25oC unlessotherwisespecified)

case

Symbol Parameter Test Cond itions Min. Typ. Max. Unit

I

CES

Collec t or Cut -off
Current (V

I

EBO

Emitt er Cut -of f Current
(I

∗ Collec t or -Emit t er

V

CE(sat)

C

=0)

BE

=0)

V

= 1500 V 200 µA

CE

V

=5V 300 mA

EB

IC=3A IB=1A 1.5 V

Saturation Voltage

∗ Base-Emi tter

V

BE(sat)

IC=3A IB=1A 1.5 V

Saturation Voltage

∗ DC Current Ga in IC=3A VCE=5V

h

FE

RESI STIVE LOAD

t

s

t

f

Storage Ti me
Fall Time

INDUCTIV E LOAD

t

V

∗

Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Storage Ti me

s

t

Fall Time

f

Diode Forward Voltag e IF=3A 2.5 V

F

=3A VCE=5V Tj=100oC

I

C

VCC=400V IC=3A

=1A IB2=-1.5A 1.8

I

B1

IC= 3 A f = 15625 Hz

=1A IB2=1.5A

I

B1

V

ceflyback

=1050sin

4

2.5

200

2.7



π



6

tV

10





5





350

9

2.7

300

µs
ns

µs
ns

Safe Operating Area Thermal Impedance

2/7

BUH315D

Derating Curve

CollectorEmitterSaturationVoltage

DC Current Gain

BaseEmitterSaturation Voltage

PowerLosses at 16 KHz

SwitchingTime InductiveLoad at 16KHz
(see figure 2)

3/7

BUH315D

SwitchingTime Resistive Load at 16KHz

BASEDRIVE INFORMATION

In order to saturate the power switch and reduce
conduction losses, adequate direct base current

has to be provided for the lowest gain hFEat

I

B1

o

100

C (line scan phase). On the other hand,

negative base current I

must be provided to

B2

turn off the power transistor (retrace phase).
Most of the dissipation, in the deflection

application, occurs at switch-off. Therefore it is
essential to determine the value of I
minimizes power losses, fall time t
consequently,T
defined to give total power losses, t
function of I

. A new set of curves have been

j

s

at 16 KHz scanning frequencies

B2

which

B2

and,

f

and tfas a

the optimum negative drive. The test circuit is
illustratedin fig.1.

Inductance L1serves to control the slope of the
negative base current I

to recombine the

B2

excess carrier in the collector when base current
is still present, this would avoid any tailing
phenomenonin the collectorcurrent.

The values of L and C are calculated from the
followingequations:

1

L(I

2
ω=2πf=

Where IC= operating collector current, V

C

)2=

1
2

1

L

√

C(V

C

CEfly

2

)

CEfly

flyback voltage, f= frequency of oscillation during
retrace.

=

4/7

Figure1: Inductive Load Switching Test Circuits.

Figure2: SwitchingWaveformsin a Deflection Circuit

BUH315D

5/7

BUH315D

ISOWATT218MECHANICAL DATA

DIM.

A 5.35 5.65 0.211 0.222
C 3.30 3.80 0.130 0.150
D 2.90 3.10 0.114 0.122

D1 1.88 2.08 0.074 0.082

E 0.75 0.95 0.030 0.037

F 1.05 1.25 0.041 0.049
F2 1.50 1.70 0.059 0.067
F3 1.90 2.10 0.075 0.083

G 10.80 11.20 0.425 0.441

H 15.80 16.20 0.622 0.638

L 9 0.354
L1 20.80 21.20 0.819 0.835
L2 19.10 19.90 0.752 0.783
L3 22.80 23.60 0.898 0.929
L4 40.50 42.50 1.594 1.673
L5 4.85 5.25 0.191 0.207
L6 20.25 20.75 0.797 0.817

N 2.1 2.3 0.083 0.091

R 4.6 0.181

DIA 3.5 3.7 0.138 0.146

MIN. TYP. MAX. MIN. TYP. MAX.

mm inch

- Weight: 4.9g (typ.)

- MaximumTorque(applied to mounting flange) Recommended: 0.8 Nm; Maximum:1 Nm

- Theside of thedissipatormust be flat within 80 µm

6/7

P025C/A

BUH315D

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.

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