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®
■ EXTRA HIGH VOLTAGE CAPABILITY
■ LOW OUTPUT CAPACITANCE
■ CHARACTERIZE D FOR LINE AR MODE
OPERATION.
APPLICATIONS:
■ DESIGNED SP E CIF ICA LLY FOR DYN A MIC
FOCUS IN CTV AND MONITOR.
DESCRIPTION
The BUH2M20AP is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
BUH2M20AP
HIGH VOLTAGE NPN SILICON
POWER TRANSISTOR
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOL UT E MAXIMU M RATINGS
Symbol Parameter Value Unit
V
V
V
I
P
T
Collector-Base Voltage (IE = 0) 2000 V
CBO
Collector-Emitter Voltage (IB = 0) 1200 V
CEO
Emitter-Base Voltage (IC = 0) 5 V
EBO
Collector Current 30 mA
I
C
Collector Peak Current (tp < 5 ms) 40 mA
CM
Total Dissipation at Tc = 25 oC20W
tot
Storage Temperature -65 to 150
stg
Max. Operating Junction Temperature 150
T
j
o
C
o
C
September 1998
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BUH2M20AP
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max 6.25
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
I
V
CBO
EBO
CEO
Collector Cut-off
Current (I
= 0)
E
Emitter Cut-off Current
(I
= 0)
C
Collector-Emitter
= 2000 V 5 µA
V
CE
= 4 V 10 µA
V
EB
IC = 1 mA 1200 V
Breakdown Voltage
V
V
CE(sat)
EBO
Emitter-Base Voltage
(I
= 0)
C
∗ Collector-Emitter
= 10 µA 5 V
I
E
IC = 2 mA IB = 400 µA5V
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = 2 mA IB = 400 µA2V
Saturation Voltage
∗ DC Current Gain IC = 2 mA VCE = 10 V
h
FE
C
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Output Capacitance VCB = 100 V IC = 0 f = 1MHz 3 pF
ob
I
= 10 mA VCE = 10 V
C
10
10
Safe Operating Are a
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TO-220 MECHANICAL DATA
BUH2M20AP
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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BUH2M20AP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of th ird parties w hich may re sult fro m its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelect r o nics G ROU P OF COM PANI E S
.
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