Datasheet BUH100 Datasheet (Motorola)

Page 1
1
Motorola Bipolar Power Transistor Device Data
  
     
The BUH100 has an application specific state–of–art die designed for use in
This power transistor is specifically designed to sustain the large inrush current
during either the start–up conditions or under a short circuit across the load.
This High voltage/High speed product exhibits the following main features:
Improved Efficiency Due to the Low Base Drive Requirements: — High and Flat DC Current Gain h
FE
— Fast Switching
Robustness Thanks to the Technology Developed to Manufacture this Device
Motorola “6 SIGMA” Philosophy Provides Tight and Reproducible Parametric Distributions
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Sustaining Voltage
V
CEO
400
Vdc
Collector–Base Breakdown Voltage
V
CBO
700
Vdc
Collector–Emitter Breakdown Voltage
V
CES
700
Vdc
Emitter–Base Voltage
V
EBO
10
Vdc
Collector Current — Continuous
— Peak (1)
I
C
I
CM
10 20
Adc
Base Current — Continuous
Base Current — Peak (1)
I
B
I
BM
4
10
Adc
*Total Device Dissipation @ TC = 25_C
*Derate above 25°C
P
D
100
0.8
Watt
W/_C
Operating and Storage Temperature
TJ, T
stg
–65 to 150
_
C
THERMAL CHARACTERISTICS
Thermal Resistance
— Junction to Case — Junction to Ambient
R
θJC
R
θJA
1.25
62.5
_
C/W
Maximum Lead Temperature for Soldering Purposes:
1/8 from case for 5 seconds
T
L
260
_
C
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 10%.
Designer’s and SWITCHMODE are trademarks of Motorola, Inc. Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

SEMICONDUCTOR TECHNICAL DATA
Order this document
by BUH100/D
Motorola, Inc. 1995

POWER TRANSISTOR
10 AMPERES
700 VOLTS
100 WATTS
CASE 221A–06
TO–220AB
Page 2
BUH100
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage
(IC = 100 mA, L = 25 mH)
V
CEO(sus)
400
460
Vdc
Collector–Base Breakdown Voltage
(I
CBO
= 1 mA)
V
CBO
700
860
Vdc
Emitter–Base Breakdown Voltage
(I
EBO
= 1 mA)
V
EBO
10
12.5
Vdc
Collector Cutoff Current
(VCE = Rated V
CEO
, IB = 0)
I
CEO
100
µAdc
Collector Cutoff Current
(VCE = Rated V
CES
, VEB = 0)
@ TC = 25°C @ TC = 125°C
I
CES
100
1000
µAdc
Collector Base Current
(VCB = Rated V
CBO
, VEB = 0)
@ TC = 25°C @ TC = 125°C
I
CBO
100
1000
µAdc
Emitter–Cutoff Current
(VEB = 9 Vdc, IC = 0)
I
EBO
100
µAdc
ON CHARACTERISTICS
Base–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
@ TC = 25°C
V
BE(sat)
1
1.1
Vdc
Collector–Emitter Saturation Voltage
(IC = 5 Adc, IB = 1 Adc)
@ TC = 25°C @ TC = 125°C
0.37
0.37
0.6
0.6
Vdc
(IC = 7 Adc, IB = 1.5 Adc)
@ TC = 25°C @ TC = 125°C
0.5
0.6
0.75
1.5
Vdc
DC Current Gain (IC = 1 Adc, VCE = 5 Vdc)
@ TC = 25°C @ TC = 125°C
15 16
24 28
DC Current Gain (IC = 5 Adc, VCE = 5 Vdc)
@ TC = 25°C @ TC = 125°C
10 10
15
14.5
DC Current Gain (IC = 7 Adc, VCE = 5 Vdc)
@ TC = 25°C @ TC = 125°C
8 7
12
10.5
DC Current Gain (IC = 10 Adc, VCE = 5 Vdc)
@ TC = 25°C @ TC = 125°C
6 4
9.5 8
DYNAMIC SATURATION VOLTAGE
C
= 5 Adc, IB1 = 1 Adc
@ TC = 25°C
1.1
V
Voltage:
Determined 3 µs after
IC = 5 Adc, IB1 = 1 Adc
VCC = 300 V
@ TC = 125°C
2.1
V
µs after
rising IB1 reaches
C
= 7.5 Adc, IB1 = 1.5 Adc
@ TC = 25°C
1.7
V
90% of final I
B1
(See Figure 19)
IC = 7.5 Adc, IB1 = 1.5 Adc
VCC = 300 V
@ TC = 125°C
5
V
DYNAMIC CHARACTERISTICS
Current Gain Bandwidth
(IC = 1 Adc, VCE = 10 Vdc, f = 1 MHz)
f
T
23
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1 MHz)
C
ob
100
150
pF
Input Capacitance
(VEB = 8 Vdc, f = 1 MHz)
C
ib
1300
1750
pF
V
CE(sat)
h
FE
Dynamic Saturation
I
I
V
CE(dsat)
Page 3
BUH100
3
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS: Resistive Load (D.C. 10%, Pulse Width = 40 µs)
Turn–on Time
@ TC = 25°C @ TC = 125°C
t
on
130 140
200
ns
Turn–off Time
IB2 = 0.2 Adc
VCC = 300 Vdc
@ TC = 25°C @ TC = 125°C
t
off
6.8
8.5
8
µs
Turn–on Time
@ TC = 25°C @ TC = 125°C
t
on
140 150
200
ns
Turn–off Time
IB2 = 0.4 Adc
VCC = 300 Vdc
@ TC = 25°C @ TC = 125°C
t
off
3.4
4.3
4
µs
Turn–on Time
@ TC = 25°C @ TC = 125°C
t
on
250 800
500
ns
Turn–off Time
IB2 = 1 Adc
VCC = 300 Vdc
@ TC = 25°C @ TC = 125°C
t
off
2.9
3.6
3.5
µs
Turn–on Time
@ TC = 25°C @ TC = 125°C
t
on
500 900
700
ns
Turn–off Time
IB2 = 1.5 Adc
VCC = 300 Vdc
@ TC = 25°C @ TC = 125°C
t
off
2.1
2.5
2.5
µs
SWITCHING CHARACTERISTICS: Inductive Load (V
clamp
= 300 V, VCC = 15 V, L = 200 µH)
Fall Time
@ TC = 25°C @ TC = 125°C
t
fi
150 180
250
ns
Storage Time
IC = 1 Adc IB1 = 0.2 Adc I
= 0.2 Adc
@ TC = 25°C @ TC = 125°C
t
si
5.1
5.8
6
µs
Crossover Time
IB2 = 0.2 Adc
@ TC = 25°C @ TC = 125°C
t
c
230 300
325
ns
Fall Time
@ TC = 25°C @ TC = 125°C
t
fi
150 170
250
ns
Storage Time
IC = 1 Adc IB1 = 0.2 Adc I
= 0.5 Adc
@ TC = 25°C @ TC = 125°C
t
si
2.5
2.8
3
µs
Crossover Time
IB2 = 0.5 Adc
@ TC = 25°C @ TC = 125°C
t
c
260 300
350
ns
Fall Time
@ TC = 25°C @ TC = 125°C
t
fi
100 140
150
ns
Storage Time
IC = 5 Adc
IB1 = 1 Adc I
= 1 Adc
@ TC = 25°C @ TC = 125°C
t
si
2.9
4.6
3.5
µs
Crossover Time
IB2 = 1 Adc
@ TC = 25°C @ TC = 125°C
t
c
220 450
300
ns
Fall Time
@ TC = 25°C @ TC = 125°C
t
fi
100 150
150
ns
Storage Time
IC = 7.5 Adc IB1 = 1.5 Adc I
= 1.5 Adc
@ TC = 25°C @ TC = 125°C
t
si
2
2.5
2.5
µs
Crossover Time
IB2 = 1.5 Adc
@ TC = 25°C @ TC = 125°C
t
c
250 475
350
ns
IC = 1 Adc, IB1 = 0.2 Adc
IC = 1 Adc, IB1 = 0.2 Adc
IC = 5 Adc, IB1 = 1 Adc
IC = 7.5 Adc, IB1 = 1.5 Adc
Page 4
BUH100
4
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 1. DC Current Gain @ 1 Volt
100
10
1
1010.10.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = 25°C
TJ = –20°C
VCE = 1 V
Figure 2. DC Current Gain @ 3 Volt
100
10
1
1010.10.001
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = –20°C
VCE = 3 V
0.01 0.01
Figure 3. DC Current Gain @ 5 Volt
100
10
1
10010.10.01
IC, COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
TJ = 125°C
TJ = –20°C
VCE = 5 V
10
Figure 4. Collector–Emitter Saturation Voltage
10
1
0.01
1010.10.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
°
C
TJ = 25°C
TJ = –20°C
IC/IB = 5
V
CE
, VOLTAGE (VOLTS)
0.1
Figure 5. Collector–Emitter Saturation Voltage
10
1
0.01
1010.10.001
IC, COLLECTOR CURRENT (AMPS)
TJ = 125
°
C
TJ = –20°C
IC/IB = 10
V
CE
, VOLTAGE (VOLTS)
0.1
0.01
Figure 6. Base–Emitter Saturation Region
1.5
1
0
1010.010.001
IC, COLLECTOR CURRENT (AMPS)
V
BE
, VOLTAGE (VOLTS)
TJ = 125°C
TJ = 25°C
TJ = –20°C
IC/IB = 5
0.5
0.1
0.01
TJ = 25°C
TJ = 25°C
TJ = 25°C
Page 5
BUH100
5
Motorola Bipolar Power Transistor Device Data
TYPICAL STATIC CHARACTERISTICS
Figure 7. Base–Emitter Saturation Region
1.5
0.5
0
1010.10.001
IC, COLLECTOR CURRENT (AMPS)
V
BE
, VOLTAGE (VOLTS)
TJ = 125°C
TJ = 25°C
TJ = –20°C
1
0.01
IC/IB = 10
Figure 8. Collector Saturation Region
2
1
0
1010.10.01
IB, BASE CURRENT (A)
V
CE(sat)
(IC = 1 A)
V
CE
, VOLTAGE (VOLTS)
TJ = 25°C
2 A
5 A
3 A
1.5
0.5
8 A
10 A
15 A
Figure 9. Capacitance
10000
10
100101
VR, REVERSE VOLTAGE (VOLTS)
C, CAPACITANCE (pF)
100
C
ib
TJ = 25°C f
(test)
= 1 MHz
1000
C
ob
Figure 10. Resistive Breakdown
900
700
400
10000010010
RBE (
)
BVCER (VOLTS)
TJ = 25°C
BVCER @ 10 mA
800
600
500
BVCER(sus) @ 500 mA, 25 mH
100001000
Page 6
BUH100
6
Motorola Bipolar Power Transistor Device Data
t, TIME ( s)
µ
TYPICAL SWITCHING CHARACTERISTICS
Figure 11. Resistive Switching Time, t
on
2500
1000
0
1020
IC, COLLECTOR CURRENT (AMPS)
4
t, TIME (ns)
1500
500
TJ = 125°C TJ = 25
°
C
IB1 = I
B2
VCC = 300 V PW = 40 µs
Figure 12. Resistive Switch Time, t
off
10
6
0
1060
IC, COLLECTOR CURRENT (AMPS)
Figure 13. Inductive Storage Time, t
si
7
1
1041
IC, COLLECTOR CURRENT (AMPS)
5
3
8
4
2
7
TJ = 125°C TJ = 25
°
C
IB1 = I
B2
VCC = 15 V VZ = 300 V LC = 200
µ
H
2000
IC/IB = 5
Figure 14. Inductive Storage Time,
tc & tfi @ IC/IB = 5
600
0
1071
IC, COLLECTOR CURRENT (AMPS)
t, TIME (ns)
200
4
TJ = 125°C TJ = 25
°
C
t
c
t
fi
400
6 8
IC/IB = 10
IC/IB = 5
125°C
25°C
2 4 8
TJ = 125°C TJ = 25
°
C
IB1 = I
B2
VCC = 300 V PW = 20 µs
IC/IB = 10
IC/IB = 5
t, TIME ( s)
µ
Figure 13 Bis. Inductive Storage Time, t
si
6
0
1041
IC, COLLECTOR CURRENT (AMPS)
5
2
7
TJ = 125°C TJ = 25
°
C
IB1 = I
B2
VCC = 15 V VZ = 300 V LC = 200
µ
H
t, TIME ( s)
µ
4
3
1
IC/IB = 10
IB1 = I
B2
VCC = 15 V VZ = 300 V LC = 200
µ
H
Figure 15. Inductive Storage Time,
tc & tfi @ IC/IB = 10
800
0
1071
IC, COLLECTOR CURRENT (AMPS)
t, TIME (ns)
200
4
TJ = 125°C TJ = 25
°
C
t
c
t
fi
400
IB1 = I
B2
VCC = 15 V VZ = 300 V LC = 200
µ
H
600
Page 7
BUH100
7
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
4
0
1042
hFE, FORCED GAIN
8
3
6
TJ = 125°C TJ = 25
°
C
Figure 16. Inductive Storage Time
2
IB1 = I
B2
VCC = 15 V VZ = 300 V LC = 200
µ
H
Figure 17. Inductive Fall Time
200
0
103
hFE, FORCED GAIN
150
t
fi
, FALL TIME (ns)
100
50
4 6 7
TJ = 125°C TJ = 25
°
C
, STORAGE TIME (t
si
µ
s)
IC = 7.5 A
IC = 5 A
5 8 9
I
Boff
= I
B2
VCC = 15 V VZ = 300 V LC = 200
µ
H
Figure 18. Inductive Crossover Time, t
c
800
300
100
hFE, FORCED GAIN
600
t
c
, CROSSOVER TIME (ns)
700
400
500
200
103 4 6 75 8 9
IB1 = I
B2
VCC = 15 V VZ = 300 V LC = 200
µ
H
TJ = 125°C TJ = 25
°
C
1
IC = 7.5 A
IC = 5 A
IC = 5 A
IC = 7.5 A
Page 8
BUH100
8
Motorola Bipolar Power Transistor Device Data
TYPICAL SWITCHING CHARACTERISTICS
Table 1. Inductive Load Switching Drive Circuit
V
(BR)CEO(sus)
L = 10 mH RB2 =
VCC = 20 Volts I
C(pk)
= 100 mA
Inductive Switching
L = 200
µ
H RB2 = 0 VCC = 15 Volts RB1 selected for desired I
B1
RBSOA
L = 500
µ
H RB2 = 0 VCC = 15 Volts RB1 selected for desired I
B1
Figure 19. Dynamic Saturation Voltage
Measurements
TIME
V
CE
0 V
I
B
90% I
B
1 µs
3 µs
dyn 1 µs
dyn 3 µs
Figure 20. Inductive Switching Measurements
10
4
0
820
TIME
6
8
6
2
4
9
7
5
3
1
1 3 5
7
I
B
I
C
V
clamp
t
si
t
c
t
fi
90% I
C
10% I
C
90% I
B1
10% V
clamp
+15 V
1
µ
F
150
3 W
100
3 W
MPF930
+10 V
50
COMMON
–V
off
500
µ
F
MPF930
MTP8P10
MUR105
MJE210
MTP12N10
MTP8P10
150
3 W
100
µ
F
I
out
A
R
B1
R
B2
1
µ
F
IC PEAK
VCE PEAK
V
CE
I
B
IB1
IB2
TYPICAL THERMAL RESPONSE
Figure 21. Forward Bias Power Derating
1
0
16010020
TC, CASE TEMPERATURE (
°
C)
0.8
POWER DERATING FACTOR
0.6
0.4
0.2
60 140
SECOND BREAKDOWN
DERATING
40 80 120
THERMAL DERATING
Page 9
BUH100
9
Motorola Bipolar Power Transistor Device Data
There are two limitations on the power handling ability of a transistor: average junction temperature and second break­down. Safe operating area curves indicate IC–VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate. The data of Figure 22 is based on TC = 25°C; T
J(pk)
is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% b ut m ust b e derated w hen TC > 2 5°C. S econd breakdown limitations do not derate the same as thermal limitations. Allowable current at t he voltages shown on Figure 22 may be found at any case temperature by using the appropriate curve on Figure 21.
T
J(pk)
may be calculated from the data in Figure 24. At any case temperatures, thermal limitations will reduce the power that can be h andled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn–off with the base to emitter junction reverse biased. The safe level is specified as a reverse biased safe operating area (Figure 23). T his rating is verified under clamped conditions s o that t he device is n ever s ubjected t o an avalanche mode.
Figure 22. Forward Bias Safe Operating Area
100
0.01 100010
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 23. Reverse Bias Safe Operating Area
12
6
0
800200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100 500
1
0.1
I
C
, COLLECTOR CURRENT (AMPS)
I
C
, COLLECTOR CURRENT (AMPS)
DC
5 ms
1 ms
10 µs
1 µs
EXTENDED
SOA
8
2
GAIN ≥ 5
0 V –1.5 V
–5 V
TC ≤ 125°C LC = 2 mH
10
300 400 700600
10
4
TYPICAL THERMAL RESPONSE
Figure 24. Typical Thermal Response (Z
θJC
(t)) for BUH100
1
0.01
100.10.01
t, TIME (ms)
0.1
1 100 1000
r(t), TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
R
θ
JC
(t) = r(t) R
θ
JC
R
θ
JC
= 1.25
°
C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t
1
T
J(pk)
– TC = P
(pk)
R
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t1/t
2
0.05
SINGLE PULSE
0.5
0.2
0.1
0.02
Page 10
BUH100
10
Motorola Bipolar Power Transistor Device Data
PACKAGE DIMENSIONS
CASE 221A–06
TO–220AB
ISSUE Y
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED.
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A 0.570 0.620 14.48 15.75 B 0.380 0.405 9.66 10.28 C 0.160 0.190 4.07 4.82 D 0.025 0.035 0.64 0.88 F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93 J 0.018 0.025 0.46 0.64 K 0.500 0.562 12.70 14.27 L 0.045 0.060 1.15 1.52 N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79 S 0.045 0.055 1.15 1.39 T 0.235 0.255 5.97 6.47 U 0.000 0.050 0.00 1.27 V 0.045 ––– 1.15 ––– Z ––– 0.080 ––– 2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING PLANE
–T–
C
S
T
U
R J
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BUH100/D
*BUH100/D*
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