Page 1
BU806
®
MEDIUM VOLTAGE NPN FAST SWITCHING
■ STMicroelectronics P REF ERRED
SALESTYPES
■ NPN DARLINGTONS
■ LOW BASE-DRIVE REQUIREMENTS
■ INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
■ HORIZONTAL DEFLECTION FOR
MONOCHRO M E TVs
DESCRIPTION
The devices are silicon epitaxial planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110 oCRT video displays.
BU807
DARLINGTON TR ANSISTORS
3
2
1
TO-220
INTER NAL SCH E M ATI C DIAG RA M
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
BU806 BU807
V
V
V
V
I
I
P
T
January 1999
Collector-base Voltage (IE = 0) 400 330 V
CBO
Collector-emitter Voltage (VBE = -6V) 400 330 V
CEV
Collector-emitter Voltage (IB = 0) 200 150 V
CEO
Emitter-Base Voltage (IC = 0) 6 V
EBO
Collector Current 8 A
I
C
Collector Peak Current 15 A
CM
Damper Diode Peak Forward Current 10 A
DM
I
Base Current 2 A
B
Total Power Dissipation at T
tot
Storage Temperature -65 to 150
stg
T
Max Operating Junction Temperature 150
j
case
< 25 oC
60 W
o
C
o
C
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Page 2
BU806 / BU807
THERMAL DATA
R
thj-case
R
thj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
2.08
70
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
= 25 oC unless otherwise specified)
case
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
CES
I
CEV
I
EBO
V
CEO(sus)
V
CE(sat)
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (V
= -6V)
BE
Emitter Cut-off
Current (I
= 0)
C
∗ Collector-Emitter
Sustaining Voltage
∗ Collector-Emitter
for BU807 V
for BU806 V
for BU807 V
for BU806 V
= 6 V 3.5 mA
V
EB
IC = 100 mA for BU807
for BU806
= 330 V
CE
= 400 V
CE
= 330 V
CE
= 400 V
CE
100
100
100
100
150
200
IC = 5A IB = 50mA 1.5 V
Saturation Voltage
V
∗ Base-Emitter
BE(sat)
IC = 5A IB = 50mA 2.4 V
Saturation Voltage
V
∗ Damper Diode
F
IF = 4A 2 V
Forward Voltage
RESISTIVE LOAD
on
off
t
s
f
Turn-on Time
Turn-off Time
Storage Time
Fall Time
t
t
t
∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 %
I
= 5 A VCC = 100 V
C
I
= 50 mA IB2 = -500 mA
B1
0.35
0.4
0.55
0.2
1
µA
µA
µA
µA
V
V
µs
µs
µs
µs
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Page 3
TO-220 MECHANICAL DATA
BU806 / BU807
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
D1 1.27 0.050
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.067
F2 1.14 1.70 0.044 0.067
G 4.95 5.15 0.194 0.203
G1 2.4 2.7 0.094 0.106
H2 10.0 10.40 0.393 0.409
L2 16.4 0.645
L4 13.0 14.0 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.2 6.6 0.244 0.260
L9 3.5 3.93 0.137 0.154
DIA. 3.75 3.85 0.147 0.151
mm inch
P011C
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Page 4
BU806 / BU807
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such inform ation nor for any infringe ment o f patents or other rig hts o f third par ties which ma y resul t from i ts use. N o li cen se is
granted by implicatio n or otherwise under an y patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical compo nents in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 1998 STMicroelectro nics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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