Datasheet BU505D, BU505 Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BU505; BU505D

Silicon diffused power transistors

Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06

1997 Aug 13

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

DESCRIPTION

High-voltage, high-speed switching
NPN power transistor in a TO-220AB
package. The BU505D has an
integrated efficiency diode.

2

2

APPLICATIONS

1

1

• Horizontal deflection circuits of
colour television receivers.

PINNING

123

MBK106

MBB008

3

MBB077

a. BU505. b. BU505D.

3

PIN DESCRIPTION

1 base
2 collector; connected to

mounting base

Fig.1 Simplified outline (TO-220AB) and symbols.

3 emitter

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V

CESM

V

CEO

V

CEsat

collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector-emitter saturation

IC= 2 A; IB= 900 mA − 1V

voltage

V

F

diode forward voltage

IF=2A − 1.8 V

(BU505D)

I

Csat

I

C

I

CM

P

tot

t

f

collector saturation current − 2A
collector current (DC) see Fig.3 − 2.5 A
collector current (peak value) see Fig.3 − 4A
total power dissipation Tmb≤ 25 °C; see Fig.4 − 75 W
fall time inductive load; see Fig.7 0.9 −µs

THERMAL CHARACTERISTICS

SYMBOL PARAMETER VALUE UNIT

R

th j-mb

thermal resistance from junction to mounting base 1.67 K/W

1997 Aug 13 2

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

Csat

I

C

I

CM

I

B

I

BM

P

tot

T

stg

T

j

collector-emitter peak voltage VBE=0 − 1500 V
collector-emitter voltage open base − 700 V
collector saturation current − 2A
collector current (DC) see Fig.3 − 2.5 A
collector current (peak value) see Fig.3 − 4A
base current (DC) − 2A
base current (peak value) − 4A
total power dissipation Tmb≤ 25 °C; see Fig.4 − 75 W
storage temperature −65 +150 °C
junction temperature − 150 °C

10

handbook, full pagewidth

Z

th j−mb
(K/W)

δ = 1

0.75

0.50

1

0.33

0.20

0.10

0.05

−1

10

−2

10

−2

10

0.02

0.01
0

−1

10

110

Fig.2 Transient thermal impedance.

MGB859

2

t

(ms)

p

10

1997 Aug 13 3

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

CHARACTERISTICS

T

=25°C unless otherwise specified.

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CEOsust

V

CEsat

V

BEsat

V

EBO

V

F

I

CES

I

EBO

h

FE

f

T

C

c

collector-emitter sustaining voltage see Figs 5 and 6 700 −−V
collector-emitter saturation voltage IC= 2 A; IB= 900 mA −−1V
base-emitter saturation voltage IC= 2 A; IB= 900 mA −−1.3 V
emitter-base voltage IE= 10 mA; IC=0 − 6 − V
diode forward voltage (BU505D) IF=2A −−1.8 V
collector-emitter cut-off current VCE=V

CESmax

; VBE=0;

−−0.15 mA

note 1
V

CE=VCESmax

; VBE=0;

−−1mA

Tj= 125 °C; note 1
emitter-base cut-off current VEB=5V; IC=0 −−1mA
DC current gain VCE=5V; IC= 100 mA 6 13 30
transition frequency VCE=5V; IC= 100 mA;

− 7 − MHz

f=5MHz
collector capacitance VCB= 10 V; IE=ie=0;

− 65 − pF

f=1MHz

Switching times in horizontal deflection circuit (see Fig.7)
t

s

storage time ICM= 2 A; I

Vdr= −4V

L

=10µH − 6.5 −µs

B

L

=15µH − 7.5 −µs

B

L

=25µH − 9.5 −µs

B

t

f

fall time ICM= 2 A; I

Vdr= −4V

L

=10µH − 0.9 −µs

B

L

=15µH − 0.9 −µs

B

=25µH − 0.85 −µs

L

B

Note

1. Measured with a half-sinewave voltage (curve tracer).

B(end)

B(end)

= 900 mA;

= 900 mA;

1997 Aug 13 4

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

handbook, full pagewidth

10

(A)

10

I

C

10

−1

2

1

I

CM max

I

C max

(1)

MGB942

δ = 0.01

tp =

10 µs

II

I

(2)

20 µs

50 µs

100 µs

200 µs

500 µs

2 ms
10 ms

−2

10

10

Tmb=25°C.
I -Region of permissible DC operation.
II -Permissible extension for repetitive pulse operation.
(1) P
(2) Second breakdown limits.

tot max

and P

tot peak max

lines.

2

10

Fig.3 Forward bias SOAR.

1997 Aug 13 5

DC

3

10

VCE (V)

4

10

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

120

handbook, halfpage

P

tot max

(%)

80

40

0

050

100 150

Fig.4 Power derating curve.

MGD283

o

T

(

C)

mb

andbook, halfpage

30 to 60 Hz

Fig.5 Test circuit for collector-emitter

100 to 200 Ω

L

300 Ω

6 V

sustaining voltage.

+ 50 V

horizontal

oscilloscope

vertical

1 Ω

MGE252

min

CEOsust

MGE239

VCE (V)

I

handbook, halfpage

C

(mA)

250
200

100

0

V

Fig.6 Oscilloscope display for collector-emitter

sustaining voltage.

1997 Aug 13 6

handbook, halfpage

i

C

i

B

I

Csat

t

t

s

f

Fig.7 Switching time waveforms.

MBH382

90%

10%

I

B (end)

time

time

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

PACKAGE OUTLINE

Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78

AE

P

q

D

1

D

A

1

(1)

L

2

b

b

1.3

1.0

1

c

1

0.7

0.4

L

DIMENSIONS (mm are the original dimensions)

UNIT

Note

1. Terminals in this zone are not tinned.

A

4.5

4.1

1.39

1.27

mm

OUTLINE
VERSION

SOT78 TO-220AB

b

A

1

0.9

0.7

IEC JEDEC EIAJ

123

b

e

e

0 5 10 mm

D

D

1

15.8

6.4

15.2

5.9

REFERENCES

10.3

9.7

L

E

1

scale

2.54

Q

c

(1)

e

L

15.0

13.5

L

3.30

2.79

1

L

2

max.

3.0

qQ

P

3.8

3.0

3.6

2.7

EUROPEAN

PROJECTION

2.6

2.2

ISSUE DATE

97-06-11

1997 Aug 13 7

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.

1997 Aug 13 8

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

NOTES

1997 Aug 13 9

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

NOTES

1997 Aug 13 10

Philips Semiconductors Product specification

Silicon diffused power transistors BU505; BU505D

NOTES

1997 Aug 13 11

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Printed in The Netherlands 137067/00/01/pp12 Date of release: 1997 Aug 13 Document order number: 9397 750 02708