Datasheet BU323Z Datasheet (ON Semiconductor)

ОООООООО

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

SEMICONDUCTOR TECHNICAL DATA

 

   

High Voltage Autoprotected

The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped, inductive applications such as Electronic Ignition, Switching Regulators and Motor Control, and exhibit the following main features:

• Integrated High–Voltage Active Clamp

• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed

Over the –40°C to +125°C Temperature Range

• Clamping Energy Capability 100% Tested in a Live

Ignition Circuit

• High DC Current Gain/Low Saturation Voltages

Specified Over Full Temperature Range

• Design Guarantees Operation in SOA at All Times

• Offered in Plastic SOT–93/TO–218 Type or

TO–220 Packages

360 V

CLAMP

Order this document

by BU323Z/D



AUTOPROTECTED

DARLINGTON

10 AMPERES

360–450 VOLTS CLAMP

150 WATTS

CASE 340D–02

SOT–93/TO–218 TYPE

MAXIMUM RATINGS

Rating

Collector–Emitter Sustaining V oltage Collector–Emitter Voltage Collector Current — Continuous

ОООООООООООООООО

— Peak

Base Current — Continuous

ОООООООООООООООО

— Peak

Total Power Dissipation (TC = 25_C)

Derate above 25_C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

ОООООООООООООООООООООООООООООООО

ОООООООООООООООО

Thermal Resistance, Junction to Case

ОООООООООООООООО

Maximum Lead Temperature for Soldering Purposes:

ОООООООООООООООО

1/8″ from Case for 5 Seconds

This document contains information on a new product. Specifications and information herein are subject to change without notice.

Characteristic

Symbol

V

CEO

V

EBO

I

C

ООООО

I

CM

I

B

I

BM

ООООО

P

D

TJ, T

stg

Symbol

ООООО

R

θJC

ООООО

T

ООООО

L

Value

350

6.0

ООООООО

10 20

3.0

ООООООО

6.0

150

1.0

–65 to +175

ООООООО

Max

1.0

260

Unit

Vdc Vdc Adc

ÎÎÎ

Adc

ÎÎÎ

Watts W/_C

_

C

Unit

ÎÎÎ

_

C/W

ÎÎÎ

_

C

ÎÎÎ

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 8

 Motorola, Inc. 1996

Motorola Bipolar Power Transistor Device Data

1

BU323Z

ÎÎÎ

Î

ÎÎÎ

Î

(I

C

I

B1

() ()

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS (1)

Collector–Emitter Clamping Voltage (IC = 7.0 A)

(TC = –40°C to +125°C)

ОООООООООООООООООО

Collector–Emitter Cutoff Current

(VCE = 200 V, IB = 0)

ОООООООООООООООООО

Emitter–Base Leakage Current

(VEB = 6.0 Vdc, IC = 0)

ON CHARACTERISTICS (1)

Base–Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 100 mAdc)

ОООООООООООООООООО

(IC = 10 Adc, IB = 0.25 Adc)

ОООООООООООООООООО

Collector–Emitter Saturation Voltage

ОООООООООООООООООО

(IC = 7.0 Adc, IB = 70 mAdc)

ОООООООООООООООООО

(IC = 8.0 Adc, IB = 0.1 Adc)

ОООООООООООООООООО

(IC = 10 Adc, IB = 0.25 Adc)

ОООООООООООООООООО

(TC = 125°C)

Base–Emitter On Voltage

(IC = 5.0 Adc, VCE = 2.0 Vdc) (TC = –40°C to +125°C)

ОООООООООООООООООО

(IC = 8.0 Adc, VCE = 2.0 Vdc)

Diode Forward Voltage Drop

(IF = 10 Adc)

ОООООООООООООООООО

DC Current Gain

(IC = 6.5 Adc, VCE = 1.5 Vdc) (TC = –40°C to +125°C)

ОООООООООООООООООО

(IC = 5.0 Adc, VCE = 4.6 Vdc)

DYNAMIC CHARACTERISTICS

Current Gain Bandwidth

(IC = 0.2 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ОООООООООООООООООО

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)

Input Capacitance

ОООООООООООООООООО

(VEB = 6.0 V)

CLAMPING ENERGY (see notes)

Repetitive Non–Destructive Energy Dissipated at turn–off:

(IC = 7.0 A, L = 8.0 mH, RBE = 100 Ω) (see Figures 2 and 4)

ОООООООООООООООООО

SWITCHING CHARACTERISTICS: Inductive Load (L = 10 mH)

Fall Time Storage Time Cross–over Time

I

= 6.5 A I = 45 mA

= 6.5 A,

V

BE(off)

VCC = 14 V, VZ = 300 V)

= 0, R

= 45 mA,

BE(off)

= 0,

(1) Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle = 2.0%.

Symbol

V

CLAMP

ÎÎ

I

CEO

ÎÎ

I

EBO

V

BE(sat)

ÎÎ

V

CE(sat)

ÎÎ

V

BE(on)

ÎÎ

V

F

ÎÎ

h

FE

ÎÎ

f

T

ÎÎ

C

ob

C

ib

ÎÎ

W

CLAMP

ÎÎ

t

fi

t

si

t

c

Min

350

ÎÎ

—

ÎÎ

—

ÎÎ

—

ÎÎ

— —

ÎÎ

—

ÎÎ

— —

ÎÎ

1.1

ÎÎ

1.3 —

ÎÎ

150

ÎÎ

500

—

ÎÎ

—

ÎÎ

200

ÎÎ

— — —

Typ

—

ÎÎ

—

ÎÎ

—

ÎÎ

—

ÎÎ

— —

ÎÎ

—

ÎÎ

— —

ÎÎ

—

ÎÎ

— —

ÎÎ

—

ÎÎ

—

ÎÎ

—

ÎÎ

—

ÎÎ

625

10

1.7

Max

450

ÎÎ

100

ÎÎ

50

2.2

ÎÎ

2.5

ÎÎ

1.6

1.8

ÎÎ

1.8

ÎÎ

2.1

1.7

ÎÎ

2.1

ÎÎ

2.3

2.5

ÎÎ

—

ÎÎ

3400

2.0

ÎÎ

200

550

ÎÎ

—

ÎÎ

— 30 —

Unit

Vdc

ÎÎ

µAdc

ÎÎ

mAdc

Vdc

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

Vdc

ÎÎ

—

ÎÎ

MHz

ÎÎ

pF

ÎÎ

mJ

ÎÎ

ns

µs µs

2

Motorola Bipolar Power Transistor Device Data

I

= 6.5 A

NOM

Icer Leakage Current

I

C

Output transistor turns on: IC = 40 mA

High Voltage Circuit turns on: IC = 20 mA

µ

Avalanche diode turns on: IC = 100

A

250 V 300 V 340 V

Figure 1. IC = f(VCE) Curve Shape

V

CLAMP

V

CE NOMINAL

= 400 V

BU323Z

By design, the BU323Z has a built–in avalanche diode and a special high voltage driving circuit. During an auto–protect cycle, the transistor is turned on again as soon as a voltage, determined by the zener threshold and the network, is reached. This prevents the transistor from going into a Reverse Bias Operating limit condition. Therefore, the device will have an extended safe operating area and will always appear to be in “FBSOA.” Because of the built–in zener and associated network, the IC = f( VCE) curve exhibits an unfamiliar shape compared to standard products as shown in Figure 1.

IB CURRENT

SOURCE

Ω

L INDUCTANCE

(8 mH)

V

CE

MONITOR

(V

)

GATE

I

C

MONITOR

MERCURY CONT ACTS WETTED RELAY

RBE = 100

V

BEoff

IB2 SOURCE

Figure 2. Basic Energy T est Circuit

10

TC = 25

1

0.1

IC CURRENT SOURCE

Ω

0.1 NON INDUCTIVE

°

C

The bias parameters, V

CLAMP

, IB1, V

BE(off)

the inductance, are applied according to the Device Under Test (DUT) specifications. VCE and IC are monitored by the test system while making sure the load line remains within the limits as described in Figure 4.

Note: All BU323Z ignition devices are 100% energy tested, per the test circuit and criteria described in Figures 2 and 4, to the minimum guaranteed repetitive energy, as specified in the device parameter section. The device can sustain this energy on a repetitive basis without degrading any of the specified electrical characteristics of the devices. The units under test are kept functional during the complete test sequence for the test conditions described: I

C(peak)

RBE= 100 Ω, V

10 ms

250 ms

= 7.0 A, ICH = 5.0 A, ICL = 100 mA, IB = 100 mA,

= 280 V, L = 8.0 mH

gate

300µs

1ms

, IB2, IC, and

0.01

, COLLECTOR CURRENT (AMPS)

C

I

0.001

Figure 3. Forward Bias Safe Operating Area

Motorola Bipolar Power Transistor Device Data

THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED V

CEO

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

1000340 V10010

3

BU323Z

I

CPEAK

I

CPEAK

I

C

The shaded area represents the amount of energy the de-

IC HIGH

vice can sustain, under given DC biases (IC/IB/V RBE), without an external clamp; see the test schematic dia-

BE(off)

/

gram, Figure 2.

The transistor P ASSES the Energy test if, for the inductive

load and I

CPEAK/IB/VBE(off)

the shaded area and greater than the V

IC LOW

V

CE

Figure 4a.

I

C

V

GATE

IC HIGH

IC LOW

MIN

V

CE

Figure 4a.

biases, the VCE remains outside

minimum limit,

GA TE

I

CPEAK

I

CPEAK

Figure 4b.

V

GATE

MIN

The transistor FAILS if the VCE is less than the V

GATE

(minimum limit) at any point along the VCE/IC curve as

I

C

shown on Figures 4b, and 4c. This assures that hot spots and uncontrolled avalanche are not being generated in the

IC HIGH

IC LOW

V

CE

Figure 4c.

I

C

V

GATE

IC HIGH

MIN

die, and the transistor is not damaged, thus enabling the sustained energy level required.

The transistor FAILS if its Collector/Emitter breakdown

voltage is less than the V

IC LOW

value, Figure 4d.

GATE

V

CE

Figure 4d.

V

GATE

MIN

Figure 4. Energy Test Criteria for BU323Z

4

Motorola Bipolar Power Transistor Device Data

BU323Z

10000

1000

, DC CURRENT GAIN

100

FE

h

5.0

4.5

4.0

3.5

3.0

2.5

2.0

1.5

1.0

, COLLECTOR–EMITTER VOL TAGE (VOLTS)

0.5

CE

V

10

10000

TYPICAL

°

C

TJ = 125

1000

TYP – 6

–40°C

25°C

VCE = 1.5 V

100001000100

IC, COLLECTOR CURRENT (MILLIAMPS)

, DC CURRENT GAIN

FE

h

Figure 5. DC Current Gain

TJ = 25

°

IC = 3 A

5 A

0

IB, BASE CURRENT (MILLIAMPS)

8 A

10 A

7 A

C

, COLLECTOR–EMITTER VOL TAGE (VOLTS)

CE

100101

V

100

10

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

TYP + 6

Σ

VCE = 5 V, TJ = 25°C

IC, COLLECTOR CURRENT (MILLIAMPS)

Figure 6. DC Current Gain

IC/IB = 150

25°C

IC, COLLECTOR CURRENT (AMPS)

Σ

10000

1000001000100

TJ = 125°C

1010.1

, BASE–EMITTER VOLTAGE (VOLTS)

BE

V

Figure 7. Collector Saturation Region

2.0

1.8

1.6

1.4

1.2

1.0

0.8

IC/IB = 150

TJ = 25°C

IC, COLLECTOR CURRENT (AMPS)

Figure 9. Base–Emitter Saturation V oltage

125°C

Figure 8. Collector–Emitter Saturation V oltage

2.0 VCE = 2 VOLTS

1.8

1.6

1.4

1.2

1.0

, BASE–EMITTER VOLTAGE (VOLTS)

0.8

BE(on)

V

1010.1

0.6

TJ = 25°C

125°C

1010.1

IC, COLLECTOR CURRENT (AMPS)

Figure 10. Base–Emitter “ON” Voltages

Motorola Bipolar Power Transistor Device Data

5

BU323Z

P ACKAGE DIMENSIONS

C

B

U

L

S

K

4

123

Q

E

A

D

J

H

V

G

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A ––– 20.35 ––– 0.801 B 14.70 15.20 0.579 0.598 C 4.70 4.90 0.185 0.193 D 1.10 1.30 0.043 0.051 E 1.17 1.37 0.046 0.054 G 5.40 5.55 0.213 0.219 H 2.00 3.00 0.079 0.118 J 0.50 0.78 0.020 0.031 K 31.00 REF 1.220 REF L ––– 16.20 ––– 0.638 Q 4.00 4.10 0.158 0.161 S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF V 1.75 REF 0.069

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

INCHESMILLIMETERS

CASE 340D–02

SOT–93/TO–218 TYPE

ISSUE B

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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6

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Motorola Bipolar Power Transistor Device Data

BU323Z/D

*BU323Z/D*