Datasheet BU323AP Datasheet (ON Semiconductor)

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SEMICONDUCTOR TECHNICAL DATA

    

The BU323AP is a monolithic darlington transistor designed for automotive ignition,

switching regulator and motor control applications.

• Collector–Emitter Sustaining Voltage — V

CER(sus)

= 475 Vdc

• 125 Watts Capability at 50 Volts

• VCE Sat Specified at –40_C = 2.0 V Max. at IC = 6.0 A

• Photoglass Passivation for Reliability and Stability

BASE

≈

1 k≈30

COLLECTOR

Order this document

by BU323AP/D



DARLINGTON

NPN SILICON

POWER TRANSISTOR

400 VOL TS

125 WATTS

EMITTER

CASE 340D–02

TO–218 TYPE

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage Collector–Emitter Voltage Emitter–Base Voltage Collector Current — Continuous

ОООООООООООООООО

— Peak (1)

Base Current — Continuous

ОООООООООООООООО

— Peak (1)

Total Power Dissipation — TC = 25_C

ОООООООООООООООО

Derate above 25_C

— TC = 100_C

Operating and Storage Junction Temperature Range

THERMAL CHARACTERISTICS

Characteristic

Thermal Resistance, Junction to Case Maximum Lead Temperature for Soldering Purposes:

1/8″ from Case for 5 Seconds

ОООООООООООООООО

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle x 10%.

Symbol

V

CEO(sus)

V

CEV

V

EB

I

C

ООООО

I

CM

I

B

I

BM

ООООО

P

D

ООООО

TJ, T

stg

Symbol

R

θJC

T

L

ООООО

Value

400 475

6.0 10

ООООООО

16

3.0

ООООООО

125

ООООООО

100

1.0

–65 to +200

Max

1.0

275

ООООООО

Unit

Vdc Vdc Vdc Adc

ÎÎÎ

Adc

ÎÎÎ

Watts Watts

ÎÎÎ

W/_C

_

C

Unit

_

C/W

_

C

ÎÎÎ

REV 8

 Motorola, Inc. 1996

Motorola Bipolar Power Transistor Device Data

3–1

BU323AP

ÎÎÎ

Î

ÎÎÎ

Î

(

CC

,

C

,

Î

ELECTRICAL CHARACTERISTICS (T

= 25_C unless otherwise noted)

C

Characteristic

OFF CHARACTERISTICS

1

Collector–Emitter Sustaining Voltage (Figure 1)

L = 10 mH

ОООООООООООООООООО

(IC = 200 mAdc, IB = 0, V

ОООООООООООООООООО

clamp

= Rated V

CEO

)

Collector–Emitter Sustaining Voltage (Figure 1)

(IC = 3 A, RBE = 100 Ohms, L = 500 µH)

ОООООООООООООООООО

Unclamped

Collector Cutoff Current (Rated V Collector Cutoff Current (Rated V

, RBE = 100 Ohms)

CER

, IE = 0)

CBO

Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)

ON CHARACTERISTICS

1

DC Current Gain

(IC = 3 Adc, VCE = 6 Vdc)

ОООООООООООООООООО

(IC = 6 Adc, VCE = 6 Vdc) (IC = 10 Adc, VCE = 6 Vdc)

ОООООООООООООООООО

Collector–Emitter Saturation Voltage

(IC = 3 Adc, IB = 60 mAdc)

ОООООООООООООООООО

(IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc

ОООООООООООООООООО

(IC = 6 Adc, IB = 120 mAdc, TC = –40_C)

Base–Emitter Saturation Voltage

ОООООООООООООООООО

(IC = 6 Adc, IB = 120 mAdc) (IC = 10 Adc, IB = 300 mAdc)

ОООООООООООООООООО

(IC = 6 Adc, IB = 120 mAdc, TC = –40_C)

Base–Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc) Diode Forward Voltage (IF = 10 Adc)

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 10 Vdc, IE = 0, f

= 100 kHz)

test

SWITCHING CHARACTERISTICS

Storage Time Fall Time

(VCC = 12 Vdc, IC = 6 Adc,

IB1 = IB2 = 0.3 Adc) Fig. 2

FUNCTIONAL TESTS

Second Breakdown Collector Current with

Base–Forward Biased

ОООООООООООООООООО

Pulsed Energy Test (See Figure 12)

1

Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

Symbol

V

CEO(sus)

ÎÎ

V

CER(sus)

ÎÎ

I

CER

I

CBO

I

EBO

h

FE

ÎÎ

V

CE(sat)

ÎÎ

V

BE(sat)

ÎÎ

V

BE(on)

V

C

ob

t

s

t

f

I

S/B

ÎÎ

IC2L/2

Min

ÎÎ

400

ÎÎ

475

300

ÎÎ

150

ÎÎ

f

ÎÎÎÎÎ

550

50

Typ

Max

Unit

Vdc

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎ

550

ÎÎ

350 150

ÎÎ

1 1

40

ÎÎ

2000

ÎÎ

mAdc mAdc mAdc

ÎÎ

Vdc

ÎÎ

1.5

ÎÎ

1.7

2.7

ÎÎ

2.0

ÎÎ

2.2 3

ÎÎ

Vdc

ÎÎ

2.4

2

165

7.5

5.2

2.5

3.5

350

15 15

Vdc Vdc

pF

µs µs

See

Figure 10

ÎÎÎÎÎ

mJ

0 V

* Adjust t1 such that

* IC reaches Required * value.

3–2

f

= 200 Hz

20 ms

test

VCC = 16 Vdc

L

*

t

1

470

47

BC337

1N4001

V

CEO

V

CER

B

TUT

≈

1K≈ 30

100

UNCLAMPED

CLAMPED

C

*

E

V

clamp

PULSE WIDTH = 1 ms

40

1N4001

51 100

≈

15 Vdc

0 Vdc

B

≈

1K≈ 30

VCC = 12 Vdc

IB = 0.3 Adc

Figure 1. Sustaining V oltage Test Circuit Figure 2. Switching Times Test Circuit

Motorola Bipolar Power Transistor Device Data

2

Ω

/20 W

IC = 6 Adc

C

TUT

E

BU323AP

2000

1000

700 500

300 200

100

, DC CURRENT GAIN

FE

h

70 50

30 20

0.1

0.2 0.3 0.5 0.7 1 5 7 10 IC, COLLECTOR CURRENT (AMP)

TJ = 150°C

25°C

VCE = 3 Vdc

VCE = 6 Vdc

23 0.1

Figure 3. DC Current Gain

1.7

1.6

IC/IB = 50

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0.7

0.6

, COLLECTOR–EMITTER SA TURATION VOLTAGE (V)

0.5

CE(sat)

V

0.1

TJ = 25

°

C

0.2 0.5 1.0 2.0 10 IC, COLLECTOR CURRENT (A)

Figure 5. Collector–Emitter Saturation V oltage

TJ = –40°C

5.0

3

2.5

2

1.5

1

, COLLECTOR–EMITTER VOL TAGE (VOLTS)

CE

0.5

V

0.002

2.2

2.1

2.0

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

, COLLECTOR–EMITTER SA TURATION VOLTAGE (V)

1.0

0.1

CE(sat)

V

TJ = 25°C

10 A

IC = 0.5 A

0.005 0.01 0.02 0.05 0.2 0.5 1 2

3

IB, BASE CURRENT (AMP)

6

Figure 4. Collector Saturation Region

TJ = 25°C

TJ = –40°C

0.2 0.5 1.0 2.0 10 IC, COLLECTOR CURRENT (A)

5.0

Figure 6. Base–Emitter V oltage

10

7 5

3 2

µ

1

0.7

t, TIME ( s)

0.5

0.3

0.2

0.1

0.2

0.3 0.5 0.7 1 3 5 20

t

s

t

f

TJ = 25°C IC/IB = 20 VCE = 12 Vdc

2

IC, COLLECTOR CURRENT (AMP)

Figure 7. Turn–Off Switching Time

Motorola Bipolar Power Transistor Device Data

710

µ

, COLLECTOR CURRENT ( A)

C

I

10

4

3

2

1

0

–1

–0.2

VCE = 250 Vdc

TJ = 150

°

C

IC = I

CES

75°C

25°C

REVERSE

0 +0.2 VBE, BASE–EMITTER VOLTAGE (VOLTS)

FORWARD

Figure 8. Collector Cutoff Region

+0.4 +0.6 +0.8

3–3

BU323AP

1

0.7

0.5

0.3

0.2

0.1

0.07

(NORMALIZED)

0.05

0.03

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.01

D = 0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PULSE

0.02 0.1 0.50.2

0.05 1 2 5 10 20 50 100 200 2000500

R

(t) = r(t) R

θ

JC

R

θ

JC

D CURVES APPLY FOR POWER

θ

= °C/W MAX

JC

PULSE TRAIN SHOWN READ TIME AT t T

– TC = P

J(pk)

1

(pk)

t, TIME (ms)

Figure 9. Thermal Response

P

(pk)

t

1

t

R

(t)

θ

JC

2

DUTY CYCLE, D = t1/t

2

1000

50 20

10

5

5.0 ms

2 1

0.2

0.1

, COLLECTOR CURRENT (AMP)

C

I

0.01

0.005 5

TC = 25°C

BONDING WIRE LIMIT

THERMAL LIMIT (SINGLE PULSE)

SECOND BREAKDOWN LIMIT

10 20

30 70

100 200 300 500

50

VCE, COLLECTOR–EMITTER VOL TAGE (VOLTS)

Figure 10. Forward Bias Safe Operating Area

100

SECOND BREAKDOWN

POWER DERATING F ACT OR (%)

80

60

40

20

THERMAL

DERATING

dc

100 µs

1.0 ms

DERATING

There are two limitations on the power handling ability of a transistor average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate.

The data of Figure 10 is based on TC = 25_C, T

J(pk)

variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown on Figure 10 may be found at any case temperature by using the appropriate curve on Figure 11.

T

may be calculated from the data in Figure 11. At high

J(pk)

case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

INDUCTIVE LOAD

1N4001

V

Z

11 mH

B

≈

1K≈ 30

TUT

C

0.22

µ

E

VCC = 16 Vdc

t

0 Vdc

VZ = 350 V (BU323P)

VZ = 400 V (BU323AP)

at IZ = 20 mA

1

50 ms

470

<1

47

1N4001

BC337

100

is

2.2

F

3–4

0

40 160 200

80 120

TC, CASE TEMPERATURE (°C)

Figure 11. Power Derating

t1 to be selected such that IC reaches 10 Adc before switch–off. NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.

Figure 12. Ignition T est Circuit

Motorola Bipolar Power Transistor Device Data

P ACKAGE DIMENSIONS

BU323AP

C

B

U

L

S

K

4

123

Q

E

A

D

J

H

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: MILLIMETER.

DIM MIN MAX MIN MAX

A ––– 20.35 ––– 0.801 B 14.70 15.20 0.579 0.598 C 4.70 4.90 0.185 0.193 D 1.10 1.30 0.043 0.051

E 1.17 1.37 0.046 0.054 G 5.40 5.55 0.213 0.219 H 2.00 3.00 0.079 0.118

J 0.50 0.78 0.020 0.031 K 31.00 REF 1.220 REF

L ––– 16.20 ––– 0.638 Q 4.00 4.10 0.158 0.161

S 17.80 18.20 0.701 0.717 U 4.00 REF 0.157 REF

V 1.75 REF 0.069

INCHESMILLIMETERS

V

G

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

CASE 340D–02

TO–218 TYPE

ISSUE B

Motorola Bipolar Power Transistor Device Data

3–5

BU323AP

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “T ypical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

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3–6

◊

Motorola Bipolar Power Transistor Device Data

BU323AP/D

*BU323AP/D*