Datasheet BU323A Datasheet (Motorola)

3–231

Motorola Bipolar Power Transistor Device Data

   


The BU323A is a monolithic darlington transistor designed for automotive ignition,

switching regulator and motor control applications.

• VCE Sat Specified at –40_C = 2.0 V Max. at IC = 6 A.

• Photoglass Passivation for Reliability and Stability.

MAXIMUM RATINGS

Rating

Symbol

ОООООООО

ОООООООО

ОООООООО

Value

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Collector–Emitter Voltage

V

CEO(sus)

ОООООООО

ОООООООО

ОООООООО

400

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector–Base Voltage

V

CBO

ОООООООО

ОООООООО

ОООООООО

600

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Emitter–Base Voltage

V

EBO

ОООООООО

ОООООООО

ОООООООО

8.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Vdc

Collector Current — Continuous

Peak (1)

I

C

ОООООООО

ОООООООО

ОООООООО

10
16

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Base Current — Continuous

I

B

ОООООООО

ОООООООО

ОООООООО

3.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Adc

Total Power Dissipation@ TC = 25_C

@ TC = 100_C

Derate above 25_C

P

D

ОООООООО

ОООООООО

ОООООООО

ОООООООО

ОООООООО

175
100

1.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Watts
Watts
W/_C

Operating and Storage Junction

TJ, T

stg

ОООООООО

ОООООООО

ОООООООО

–65 to +200

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

THERMAL CHARACTERISTICS

Characteristic

Symbol

ОООООООО

ОООООООО

ОООООООО

Max

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

Unit

Thermal Resistance, Junction to Case

R

θJC

ОООООООО

ОООООООО

ОООООООО

1.0

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C/W

Maximum Lead Temperature for Soldering

Purposes: 1/8″ from Case for 5 Seconds

T

L

ОООООООО

ОООООООО

ОООООООО

275

ÎÎÎÎ

ÎÎÎÎ

ÎÎÎÎ

_

C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle v 10%.



SEMICONDUCTOR TECHNICAL DATA

Order this document

by BU323A/D

 Motorola, Inc. 1995



16 AMPERE PEAK

POWER TRANSISTOR

DARLINGTON NPN

SILICON

400 VOLTS

175 WATTS

CASE 1–07

TO–204AA

(TO–3)

COLLECTOR

EMITTER

BASE

≈

1 k≈ 30

REV 7

BU323A

3–232

Motorola Bipolar Power Transistor Device Data

ELECTRICAL CHARACTERISTICS (T

C

= 25_C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

ÎÎÎ

ÎÎÎ

ÎÎÎ

Unit

OFF CHARACTERISTICS

1

Collector–Emitter Sustaining Voltage (Figure 1)

L = 10 mH
(IC = 200 mAdc, IB = 0, V

clamp

= Rated V

CEO

)

V

CEO(sus)

400

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector–Emitter sustaining Voltage (Figure 1)

(IC = 3 A, RBE = 100 Ohms, L = 500 µH)
Unclamped

V

CER(sus)

475

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Collector Cutoff Current (Rated V

CER

, RBE = 100 Ohms)

I

CER

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Collector Cutoff Current (Rated V

CBO

, IE = 0)

I

CBO

1

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

Emitter Cutoff Current (VEB = 6 Vdc, IC = 0)

I

EBO

40

ÎÎÎ

ÎÎÎ

ÎÎÎ

mAdc

ON CHARACTERISTICS

1

DC Current Gain

(IC = 3 Adc, VCE = 6 Vdc)
(IC = 6 Adc, VCE = 6 Vdc)
(IC = 10 Adc, VCE = 6 Vdc)

h

FE

300
150

50

550
350
150

2000

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 3 Adc, IB = 60 mAdc)
(IC = 6 Adc, IB = 120 mAdc)
(IC = 10 Adc, IB = 300 mAdc)
(IC = 6 Adc, IB = 120 mAdc, TC = –40_C)

V

CE(sat)

1.5

1.7

2.7

2.0

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter Saturation Voltage

(IC = 6 Adc, IB = 120 mAdc)
(IC = 10 Adc, IB = 300 mAdc)
(IC = 6 Adc, IB = 120 mAdc, TC = –40_C)

V

BE(sat)

2.2
3

2.4

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Base–Emitter On Voltage (IC = 10 Adc, VCE = 6 Vdc)

V

BE(on)

2.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

Diode Forward Voltage (IF = 10 Adc)

V

f

2

3.5

ÎÎÎ

ÎÎÎ

ÎÎÎ

Vdc

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 10 Vdc, IE = 0, f

test

= 100 kHz)

C

ob

165

350

ÎÎÎ

ÎÎÎ

ÎÎÎ

pF

SWITCHING CHARACTERISTICS

Storage Time

CC

– 12 Vdc, IC = 6 Adc,

t

s

7.5

15

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

Fall Time

(VCC – 12 Vdc, IC = 6 Adc,

IB1 = IB2 = 0.3 Adc) Fig. 2

t

f

5.2

15

ÎÎÎ

ÎÎÎ

ÎÎÎ

µs

FUNCTIONAL TESTS

Second Breakdown Collector Current with

Base–Forward Biased

I

S/B

See

Figure10

ÎÎÎ

ÎÎÎ

ÎÎÎ

ÎÎÎ

Pulsed Energy Test (See Figure 12)

IC2L/2

550

ÎÎÎ

ÎÎÎ

ÎÎÎ

mJ

1

Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2%.

0 V

t

1

20 ms

*

470

≈

1K≈ 30

L

47

1N4001

BC337

V

CEO

V

CER

100

B

TUT

C

*

E

V

clamp

UNCLAMPED

CLAMPED

* Adjust t1 such that

* IC reaches Required
* value.

VCC = 16 Vdc

f

test

= 200 Hz

PULSE WIDTH = 1 ms

≈

1K≈ 30

B

TUT

C

E

40

51 100

IB = 0.3 Adc

VCC = 12 Vdc

2

Ω

/20 W

IC = 6 Adc

≈

15 Vdc

0 Vdc

1N4001

Figure 1. Sustaining Voltage Test Circuit Figure 2. Switching Times Test Circuit

(V

BU323A

3–233

Motorola Bipolar Power Transistor Device Data

V

CE

, COLLECTOR–EMITTER VOLTAGE (VOLTS)

2000

0.1

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

20

0.2 0.3 0.5 0.7 1 5 7 10

500

200

100

70

Figure 4. Collector Saturation Region

3

0.002
IB, BASE CURRENT (AMP)

0.5

0.005 0.01 0.02 0.05 0.2 0.5 1 2

2.5

2

1.5

1

IC = 0.5 A

TJ = 25°C

3

10 A

700

300

h

FE

, DC CURRENT GAIN

TJ = 150°C

25°C

50
30

2 3 0.1

1.7

0.1

Figure 5. Collector–Emitter Saturation Voltage

IC, COLLECTOR CURRENT (A)

0.2 0.5 1.0 2.0 10

1.6

1.4

1.3

0.5

IC/IB = 50

1.5

Figure 6. Base–Emitter Voltage

1000

VCE = 3 Vdc
VCE = 6 Vdc

6

V

CE(sat)

, COLLECTOR–EMITTER SATURATION VOLTAGE (V)

1.2

1.1

0.9

0.8

1.0

0.7

0.6

5.0

T

J

2.2

0.1
IC, COLLECTOR CURRENT (A)

0.2 0.5 1.0 2.0 10

2.1

1.9

1.8

1.0

2.0

1.7

1.6

1.4

1.3

1.5

1.2

1.1

5.0

T

J

TJ = 25°C

Figure 7. Turn–Off Switching Time

10

0.2
IC, COLLECTOR CURRENT (AMP)

0.1

0.3 0.5 0.7 1 3 5 20

TJ = 25°C
IC/IB = 20
VCE = 12 Vdc

t, TIME ( s)

µ

2

7
5

3
2

1

t

s

0.7

0.5

0.3

0.2

7 10

t

f

Figure 8. Collector Cutoff Region

10

4

–0.2

VBE, BASE–EMITTER VOLTAGE (VOLTS)

10

–1

0 +0.2

10

3

10

2

10

1

10

0

+0.4 +0.6 +0.8

REVERSE

VCE = 250 Vdc
TJ = 150

°

C

IC = I

CES

75°C

25°C

V

CE(sat)

, COLLECTOR–EMITTER SATURATION VOLTAGE (V)

FORWARD

µ

, COLLECTOR CURRENT ( A)

C

I

BU323A

3–234

Motorola Bipolar Power Transistor Device Data

Figure 9. Thermal Response

t, TIME (ms)

1

0.01

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.05 1 2 5 10 20 50 100 200 2000500

R

θ

JC

(t) = r(t) R

θ

JC

R

θ

JC

=

°

C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t

1

T

J(pk)

– TC = P

(pk)

R

θ

JC

(t)

P

(pk)

t

1

t

2

DUTY CYCLE, D = t1/t

2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.1 0.50.2

(NORMALIZED)

1000

0.02

50

5

Figure 10. Forward Bias Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

20
10

5

1

0.005
30 70

BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT

I

C

, COLLECTOR CURRENT (AMP)

dc

100 µs

0.2

0.01
10 20

5.0 ms

1.0 ms

100 200 300 500

2

0.1

50

TC = 25°C

There are two limitations on the power handling ability of a
transistor: average junction temperature and second break­down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipa­tion than the curves indicate.

The data of Figure 10 is based on TC = 25_C; T

J(pk)

is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not der­ate the same as thermal limitations. Allowable current at the
voltages shown on Figure 10 may be found at any case tem­perature by using the appropriate curve on Figure 11.

T

J(pk)

may be calculated from the data in Figure 1 1. At high
case temperatures, thermal limitations will reduce the power
that can be handled to values less than the limitations im­posed by second breakdown.

100

0

Figure 11. Power Derating

TC, CASE TEMPERATURE (°C)

80

0

80 120

POWER DERATING FACTOR (%)

40

20

40 160 200

60

THERMAL

DERATING

SECOND BREAKDOWN

DERATING

Figure 12. Ignition Test Circuit

0 Vdc

t

1

50 ms

≈

1K≈ 30

B

470

VCC = 16 Vdc

1N4001

BC337

47

V

Z

C

E

TUT

2.2

0.22

µ

F

100

1N4001

<1

11 mH

INDUCTIVE LOAD

t1 to be selected such that IC reaches 10 Adc before switch–off.
NOTE: Figure 12 specifies energy handling capabilities in an automotive ignition circuit.

VZ = 400 V (BU323A)
at IZ = 20 mA

BU323A

3–235

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A 1.550 REF 39.37 REF
B ––– 1.050 ––– 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
E 0.055 0.070 1.40 1.77
G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
N ––– 0.830 ––– 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

A

N

E

C

K

–T–

SEATING
PLANE

2 PLD

M

Q

M

0.13 (0.005) Y

M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

U

L

G

B

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

BU323A

3–236

Motorola Bipolar Power Transistor Device Data

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BU323A/D

*BU323A/D*

◊