Datasheet BU2725AX Datasheet (Philips)

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725AX

GENERAL DESCRIPTION

High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal
deflection circuits of colour television receivers. Designed to withstand V

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
V
I
I
P
V
I
t

C
CM

Csat
s

CESM
CEO

tot
CEsat

Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector-emitter voltage (open base) - 825 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Total power dissipation Ths ≤ 25 ˚C - 45 W
Collector-emitter saturation voltage IC = 7.0 A; IB = 1.75 A - 1.0 V
Collector saturation current f = 16 kHz 7.0 - A
Storage time I

= 7.0 A; f = 16kHz 5.8 6.5 µs

Csat

PINNING - SOT399 PIN CONFIGURATION SYMBOL

pulses up to 1700V.

CES

PIN DESCRIPTION

case

c

1 base
2 collector

b

3 emitter

case isolated

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CESM

V

CEO

I

C

I

CM

I

B

I

BM

-I

B(AV)

-I

BM

P

tot

T

stg

T

j

Collector-emitter voltage peak value VBE = 0 V - 1700 V
Collector-emitter voltage (open base) - 825 V
Collector current (DC) - 12 A
Collector current peak value - 30 A
Base current (DC) - 12 A
Base current peak value - 20 A
Reverse base current average over any 20 ms period - 200 mA
Reverse base current peak value

1

Total power dissipation Ths ≤ 25 ˚C - 45 W
Storage temperature -65 150 ˚C
Junction temperature - 150 ˚C

ESD LIMITING VALUES

123

e

-9A

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

C

1 Turn-off current.

Electrostatic discharge capacitor voltage Human body model (250 pF, - 10 kV

1.5 kΩ)

September 1997 1 Rev 1.400

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725AX

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

R

th j-hs

R

th j-hs

R

th j-a

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

Junction to heatsink without heatsink compound - 3.7 K/W
Junction to heatsink with heatsink compound - 2.8 K/W
Junction to ambient in free air 35 - K/W

Repetitive peak voltage from all R.H. ≤ 65 % ; clean and dustfree - 2500 V
three terminals to external
heatsink

Capacitance from T2 to external f = 1 MHz - 22 - pF
heatsink

STATIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CES

I

CES

I

EBO

BV
V

CEOsust

EBO

Collector cut-off current

Emitter cut-off current VEB = 7.5 V; IC = 0 A - - 1.0 mA
Emitter-base breakdown voltage IB = 1 mA 7.5 13.5 - V
Collector-emitter sustaining voltage IB = 0 A; IC = 100 mA; 825 - - V

2

VBE = 0 V; VCE = V
VBE = 0 V; VCE = V
Tj = 125 ˚C

CESMmax

; - - 2.0 mA

CESMmax

- - 1.0 mA

L = 25 mH
V
V
h
h

CEsat

BEsat
FE
FE

Collector-emitter saturation voltage IC = 7.0 A; IB = 1.75 A - - 1.0 V
Base-emitter saturation voltage IC = 7.0 A; IB = 1.75 A - - 1.1 V
DC current gain IC = 0.1 A; VCE = 5 V - 22 -

IC = 7 A; VCE = 1 V 4 6 8.5

DYNAMIC CHARACTERISTICS

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

Switching times (16 kHz line I
deflection circuit) VCC = 162 V; I

t

s

t

f

Turn-off storage time 5.8 6.5 µs
Turn-off fall time 0.6 0.8 µs

= 7.0 A; LC = 650 µH; Cfb = 18 nF;

Csat

-VBB = 4 V;

= 1.5 A; LB = 2 µH;

B(end)

2 Measured with half sine-wave voltage (curve tracer).

September 1997 2 Rev 1.400

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725AX

30-60 Hz

IC / mA

250
200

100R

6V

Fig.1. Test circuit for V

100-200R

Horizontal

Oscilloscope

Vertical

1R

.

CEOsust

+ 50v

ICsat

90 %

IC

10 %

IB

ts

IBend

tf

- IBM

Fig.4. Switching times definitions.

+ 150 v nominal
adjust for ICsat

Lc

t

t

100

0

VCE / V

Fig.2. Oscilloscope display for V

IC

IB

VCE

TRANSISTOR

DIODE

26us20us

64us

min

VCEOsust

CEOsust

ICsat

IBend

Fig.3. Switching times waveforms (16 kHz).

IBend

LB

T.U.T.

Cfb

-VBB

.

t

t

t

Fig.5. Switching times test circuit.

hFE

100

VCE = 5 V

10

1

0.01 0.1 1 10 100

BU2727A/AF

Ths = 25 C
Ths = 85 C

IC / A

Fig.6. DC current gain. hFE = f (IC)

Parameter T

hs

(Low and high gain)

September 1997 3 Rev 1.400

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725AX

hFE BU2727A/AF

100

VCE = 1 V

10

1

0.01 0.1 1 10 100

Ths = 25 C
Ths = 85 C

IC / A

Fig.7. DC current gain. hFE = f (IC)

Parameter T

(Low and high gain)

10

Ths = 85 C
Ths = 25 C

1

IC/IB = 12

0.1

0.01

0.1 1 10 100

hs

BU2727A/AFVCEsat / V

IC/IB = 5

IC / A

Fig.8. Typical collector-emitter saturation voltage.

V

= f (IC); parameter IC/I

CEsat

B

ts/tf/ us

10

9
8
7
6
5
4
3
2
1
0

01234

BU2527AFX,DFX

IB / A

Fig.10. Limit storage and fall time.

ts = f (IB); tf = f (IB); Ths = 85˚C; f = 16 kHz

PD%

120
110
100

90
80
70
60
50
40
30
20
10

0

0 20 40 60 80 100 120 140

Normalised Power Derating

with heatsink compound

Ths / C

Fig.11. Normalised power dissipation.

PD% = 100⋅PD/PD 25˚C = f (Ths)

VBEsat / V BU2727A/AF

1

0.9

0.8

0.7

0.6
01234

IC = 6 A

4 A

Ths = 85 C
Ths = 25 C

IB / A

Fig.9. Typical base-emitter saturation voltage.

V

= f (IB); parameter I

BEsat

C

Zth / (K/W)

10

0.5

1

0.2

0.1

0.05

0.1

0.02

P

0.01

D = 0

0.001
1E-06 1E-04 1E-02 1E+00

D

t / s

Fig.12. Transient thermal impedance.

Zth

= f(t); parameter D = tp/T

j-hs

BU2525AF

p

t

T

D =

t

p

T

t

September 1997 4 Rev 1.400

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725AX

VCC

LC

IBend

-VBB

LB

T.U.T.

Fig.13. Test Circuit RBSOA.

VCC = 150 V; -VBB = 1 - 4 V;

LC = 1 mH; VCL = 1500 V; LB = 0.5 - 2 µH;

CFB = 1 - 3 nF; I

= 0.8 - 4 A

B(end)

CFB

VCL

IC / A

35

30

25

20

15

10

5

0

100 1000 1700

VCE / V

BU2727A/AF/D/DF

Area where
fails occur

Fig.14. Reverse bias safe operating area. Tj ≤ T

jmax

September 1997 5 Rev 1.400

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725AX

MECHANICAL DATA

Dimensions in mm
Net Mass: 5.88 g

4.5

16.0 max

10.0

0.7

3.3

5.8 max

3.0

27

max

22.5
max

18.1
min

5.45 5.45

Fig.15. SOT399; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

25

25.1

25.7

5.1

2.2 max

4.5

1.1

0.4 M
2

0.95 max

3.3

September 1997 6 Rev 1.400

Philips Semiconductors Product specification

Silicon Diffused Power Transistor BU2725AX

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997 7 Rev 1.400