Page 1
现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!
Data Sheet, V1.0, January 2004
BTS 5234L
Smart High-Side Power Switch
PROFET
Two Channels, 60 mΩ
Automotive Power
Never stop thinking.
Page 2
Smart High-Side Power Switch
BTS 5234L
Table of Contents Page
Product Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
1Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
1.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
2 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.1 Pin Assignment BTS 5234L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
2.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7
3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
3.1 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Block Description and Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . .10
4.1 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4.1.1 Output On-State Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.2 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4.1.3 Inductive Output Clamp . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.1.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.2 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
4.2.1 Over Load Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.2.2 Reverse Polarity Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.3 Over Voltage Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.4 Loss of Ground Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.2.5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4.3 Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .18
4.3.1 ON-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.3.2 OFF-State Diagnosis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
4.3.3 Sense Enable Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
4.3.4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
5 Package Outlines BTS 5234L . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .24
6 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .25
Data Sheet 2 V1.0, 2004-01-23
Page 3
Smart High-Side Power Switch
PROFET
Product Summary
The BTS 5234L is a dual channel high-side power
switch in P-DSO-12-2 package providing embedded
protective functions.
The power transistor is built by a N-channel vertical
power MOSFET with charge pump. The device is
monolithically integrated in Smart SIPMOS
technology.
Operating voltage
V
bb(on)
BTS 5234L
P-DSO-12-2
4.5..28V
Over voltage protection
On-State resistance
Nominal load current (one channel active)
Current limitation
Current limitation repetitive
Standby current for whole device with load
V
bb(AZ)
R
DS(ON)
I
L(nom)
I
L(LIM)
I
L(SCr)
I
bb(OFF)
Basic Features
• Very low standby current
• 3.3 V and 5 V compatible logic pins
• Improved electromagnetic compatibility (EMC)
• Stable behavior at under voltage
• Logic ground independent from load ground
• Secure load turn-off while logic ground disconnected
• Optimized inverse current capability
41 V
60 mΩ
3.5 A
23 A
6A
2.5 µA
Type Ordering Code Package
BTS 5234L Q67060-S6155 P-DSO-12-2
Data Sheet 3 V1.0, 2004-01-23
Page 4
Smart High-Side Power Switch
Protective Functions
• Reverse battery protection without external components
• Short circuit protection
• Overload protection
• Multi-step current limitation
• Thermal shutdown with restart
• Thermal restart at reduced current limitation
• Over voltage protection without external resistor
• Loss of ground protection
• Electrostatic discharge protection (ESD)
Diagnostic Functions
• Enhanced IntelliSense signal for each channel
• Enable function for diagnosis pins (IS1 and IS2)
• Proportional load current sense signal by current source
• High accuracy of current sense signal at wide load current range
• Open load detection in ON-state by load current sense
• Open load detection in OFF-state by voltage source
• Feedback on over temperature and current limitation in ON-state
BTS 5234L
Applications
• µC compatible high-side power switch with diagnostic feedback for 12 V grounded
loads
• All types of resistive, inductive and capacitive loads
• Suitable for loads with high inrush currents, so as lamps
• Suitable for loads with low currents, so as LEDs
• Replaces electromechanical relays, fuses and discrete circuits
Data Sheet 4 V1.0, 2004-01-23
Page 5
Smart High-Side Power Switch
BTS 5234L
Overview
1Overview
The BTS 5234L is a dual channel high-side power switch (two times 60 mΩ) in
P-DSO-12-2 power package providing embedded protective functions.
The Enhanced IntelliSense pins IS1 and IS2 provide a sophisticated diagnostic feedback
signal including current sense function and open load in off state. The diagnosis signals
can be switched on and off by the sense enable pin SEN.
An integrated ground resistor as well as integrated resistors at each input pin (IN1, IN2,
SEN) reduce external components to a minimum.
The power transistor is built by a N-channel vertical power MOSFET with charge pump.
The inputs are ground referenced CMOS compatible. The device is monolithically
integrated in Smart SIPMOS technology.
1.1 Block Diagram
VBB
OUT1
IN1
IS1
SEN
channel 1
internal
power
supply
ESD
protection
logic
load cur rent
sense
gate control
&
char ge pum p
open l oad
detection
tem per atur e
sensor
clamp for
inductive load
multi step
load cur r ent
limitation
channel 2
IN2
IS2
control and protecti on cir cuit
equival ent to
channel 1
R
GND
GND
OUT2
Figure 1 Block Diagram
Data Sheet 5 V1.0, 2004-01-23
Page 6
Smart High-Side Power Switch
BTS 5234L
1.2 Terms
Following figure shows all terms used in this data sheet.
V
bb
I
IN1
IN1
V
IN1
V
IN2
I
IN2
IN2
I
IS1
BTS 5234L
IS1
I
V
IS1
IS2
IS2
V
IS2
I
SEN
SEN
V
SEN
VBB
GND
I
bb
I
GND
OUT1
OUT2
Overview
I
L1
I
L2
V
V
V
V
OUT1
DS2
OUT2
DS1
Ter m s2 ch . em f
Figure 2 Terms
Data Sheet 6 V1.0, 2004-01-23
Page 7
Smart High-Side Power Switch
BTS 5234L
2 Pin Configuration
2.1 Pin Assignment BTS 5234L
(top view)
GND
IN1
IS1
IS2
IN2
VBB
1
2
3
4
5
6
12
11
10
9
8
7
heat slug (VBB)
Pin Configuration
VBB
OUT1
OUT1
OUT2
OUT2
SEN
Figure 3 Pin Configuration P-DSO-12-2
2.2 Pin Definitions and Functions
Pin Symbol I/O
OD
2 IN1 I Input signal for channel 1
5 IN2 I Input signal for channel 2
3 IS1 O Diagnosis output signal channel 1
4 IS2 O Diagnosis output signal channel 2
7 SEN I Sense Enable input for channel 1&2
10,11 OUT1 O Protected high-side power output channel 1
8, 9 OUT2 O Protected high-side power output channel 2
1 GND - Ground connection
6,12,
VBB - Positive power supply for logic supply as well as
heat slug
Function
output power supply
Data Sheet 7 V1.0, 2004-01-23
Page 8
Smart High-Side Power Switch
BTS 5234L
Electrical Characteristics
3 Electrical Characteristics
3.1 Maximum Ratings
Stresses above the ones listed here may affect device reliability or may cause permanent
damage to the device.
Unless otherwise specified:
T
= 25 °C
j
Pos. Parameter Symbol Limit Values Unit Test
Conditions
R = 0.2 Ω
1)
Supply Voltage
3.1.1 Supply voltage V
3.1.2 Supply voltage for full short
V
circuit protection (single pulse)
T
= -40°C .. 150°C)
(
j(0)
bb
bb(SC)
min. max.
-16 28 V
028VL = 8 µH,
3.1.3 Voltage at power transistor V
3.1.4 Supply Voltage for Load Dump
V
protection
Power Stages
3.1.5 Load current
3.1.6 Maximum energy dissipation
I
E
single pulse
3.1.7 Power dissipation (DC)
P
Logic Pins
3.1.8 Voltage at input pin
3.1.9 Current through input pin
3.1.10 Voltage at sense enable pin
V
I
V
DS
bb(LD)
L
AS
tot
IN
IN
SEN
-52V
41 V RI = 2 Ω
R
= 6.8 Ω
L
L(0)
T
3)
j(0)
= 2 A
= 150°C
- I
L(LIM)
A-
-0.65JI
-1.6 WTa = 85 °C
T
≤ 150 °C
j
-5
-16
-2.0
-8.0
-5
-16
10 V
t ≤ 2min
2.0 mA
t ≤ 2min
10 V
t ≤ 2min
2)
4)
5)
3.1.11 Current through sense enable
pin
3.1.12 Current through sense pin
Data Sheet 8 V1.0, 2004-01-23
I
SEN
I
IS
-2.0
2.0 mA
-8.0
-25 10 mA
t ≤ 2min
Page 9
Smart High-Side Power Switch
BTS 5234L
Electrical Characteristics
Unless otherwise specified:
T
= 25 °C
j
Pos. Parameter Symbol Limit Values Unit Test
min. max.
Conditions
Temperatures
3.1.13 Junction Temperature
3.1.14 Dynamic temperature increase
T
j
∆T
-40 150 °C
j
-60°C
while switching
3.1.15 Storage Temperature
T
stg
-55 150 °C
ESD Susceptibility
IS
V
ESD
-1
-2
-4
kV according to
1
2
EIA/JESD
22-A 114B
4
3.1.16 ESD susceptibility HBM
IN, SEN
OUT
1)
R and L describe the complete circuit impedance including line, contact and generator impedances
2)
Load Dump is specified in ISO 7636, RI is the internal resistance of the Load Dump pulse generator
3)
Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal
operating range. Protection features are not designed for continuous repetitive operation.
4)
Pulse shape represents inductive switch off: I
5)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for V
connection. PCB is vertical without blown air.
bb
(t) = IL(0) * (1 - t / t
L
); 0 < t < t
peak
peak
Data Sheet 9 V1.0, 2004-01-23
Page 10
Smart High-Side Power Switch
BTS 5234L
Block Description and Electrical Characteristics
4 Block Description and Electrical Characteristics
4.1 Power Stages
The power stages are built by a N-channel vertical power MOSFET (DMOS) with charge
pump.
4.1.1 Output On-State Resistance
The on-state resistance R
T
temperature
. Figure 4 shows that dependencies for the typical on-state resistance.
j
DS(ON)
The behavior in reverse polarity mode is described in Section 4.2.2.
Vbb = 13.5 V Tj = 25°C
90
80
depends on the supply voltage as well as the junction
160
140
70
/mΩ
60
DS(ON)
50
R
40
30
-50 -25 0 25 50 75 100 125 150
T /°C
120
/mΩ
100
DS(ON)
80
R
60
40
0 5 10 15 20 25
V
/V
Figure 4 Typical On-State Resistance
4.1.2 Input Circuit
Figure 5 shows the input circuit of the BTS 5234L. There is an integrated input resistor
that makes external components obsolete. The current sink to ground ensures that the
device switches off in case of open input pin. The zener diode protects the input circuit
against ESD pulses.
R
IN
IN
I
IN
R
GND
GND
Input.emf
Figure 5 Input Circuit (IN1 and IN2)
Data Sheet 10 V1.0, 2004-01-23
Page 11
Smart High-Side Power Switch
BTS 5234L
Block Description and Electrical Characteristics
A high signal at the input pin causes the power DMOS to switch on with a dedicated
slope, which is optimized in terms of EMC emission.
IN
t
t
Swit chOn.emf
V
90%
70%
30%
10%
OUT
t
ON
dV /dt
ON
dV /dt
70%
30%
OFF
t
OFF
Figure 6 Switching a Load (resistive)
4.1.3 Inductive Output Clamp
When switching off inductive loads with high-side switches, the voltage V
OUT
drops
below ground potential, because the inductance intends to continue driving the current.
V
bb
VBB
I
L
V
OUT
GND
OUT
L,
R
L
OutputClamp.emf
Figure 7 Output Clamp (OUT1 and OUT2)
To prevent destruction of the device, there is a voltage clamp mechanism implemented
that keeps that negative output voltage at a certain level (V
OUT(CL)
). See Figure 7 and
Figure 8 for details. Nevertheless, the maximum allowed load inductance is limited.
Data Sheet 11 V1.0, 2004-01-23
Page 12
Smart High-Side Power Switch
BTS 5234L
V
OUT
V
bb
0
V
OUT(CL)
I
L
Block Description and Electrical Characteristics
IN = 5V IN = 0V
t
t
I nduct iveLoad. emf
Figure 8 Switching an Inductance
Maximum Load Inductance
While demagnetization of inductive loads, energy has to be dissipated in the BTS 5234L.
This energy can be calculated with following equation:
V
OUT(CL)
EVbbV
+()
OUT(CL)
------------------------- -
⋅⋅=
R
L
Following equation simplifies under the assumption of
2
1
-- -
E
LI
2
1
⋅=
L
ln⋅ 1
V
------------------------- -+
V
OUT(CL)
bb
RLI
------------------------- -+
V
OUT(CL)
R
L
⋅
= 0:
L
I
+
L
L
------
R
L
The energy, which is converted into heat, is limited by the thermal design of the
component. See Figure 9 for the maximum allowed energy dissipation.
/J
E
AS
Vbb = 12 V
0.9
0.5
0.4
0.3
0.2
0.1
0.05
0.04
Figure 9 Maximum energy dissipation single pulse, T
2 3 4 5 6 7 8 9 10
I /A
= 150°C
j,Start
Data Sheet 12 V1.0, 2004-01-23
Page 13
Smart High-Side Power Switch
BTS 5234L
Block Description and Electrical Characteristics
4.1.4 Electrical Characteristics
Unless otherwise specified:
V
= 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C
bb
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
General
4.1.1 Operating voltage
4.1.2 Operating current
one channel active
all channels active
4.1.3 Standby current for
whole device with
load
V
bb
I
GND
I
bb(OFF)
4.5 28 V VIN = 4.5 V
R
= 12 Ω
L
V
< 0.5 V
DS
1.8
3.6
4
8
1.5 2.5
2.5
15
mA
µA
V
= 5 V
IN
V
= 0 V
IN
V
= 0 V
SEN
T
= 25°C
j
T
= 85°C
j
T
= 150°C
j
1)
Output characteristics
4.1.4 On-State resistance
R
per channel
4.1.5 Output voltage drop
V
limitation at small load
currents
4.1.6 Nominal load current
I
per channel
one channel active
two channels active
ISO load current per
I
channel
one channel active
two channels active
4.1.7 Output clamp V
4.1.8 Output leakage
I
current per channel
4.1.9 Inverse current
-I
capability
DS(ON)
DS(NL)
L(nom)
L(ISO)
OUT(CL)
L(OFF)
L(inv)
45
90
mΩ
60
115
I
= 2.5 A
L
T
= 25 °C
j
T
= 150 °C
j
40 mV IL < 0.25 A
T
A
= 85 °C
a
T
≤ 150 °C 2)
j
3.5
2.6
T
A
= 85 °C
c
V
= 0.5 V
DS
5.3
5.3
-16 -13 -10 V IL = 40 mA
0.1 6 µA VIN = 0 V
3A
1)
3)
3)
Data Sheet 13 V1.0, 2004-01-23
Page 14
Smart High-Side Power Switch
BTS 5234L
Block Description and Electrical Characteristics
Unless otherwise specified:
V
= 9 V to 16 V, Tj = -40 °C to +150 °C, typical values: Vbb = 13.5 V, Tj = 25 °C
bb
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Thermal Resistance
4.1.10 Junction to case
4.1.11 Junction to ambient
one channel active
all channels active
R
R
thjc
thja
-2.2 K/W-
K/W -
-
-
45
40
1)
1)2)
Input characteristics
4.1.12 Input resistor
4.1.13 L-input level
4.1.14 H-input level
4.1.15 L-input current
R
IN
V
IN(L)
V
IN(H)
I
IN(L)
1.8 3.5 5.5 kΩ
-0.3 1.0 V
2.5 5.7 V
31875µAVIN = 0.4 V
4.1.16 H-input current
I
IN(H)
10 38 75 µA VIN = 5 V
Timings
4.1.17 Turn-on time to
90% V
bb
4.1.18 Turn-off time to
10% V
bb
4.1.19 slew rate
30% to 70% V
bb
4.1.20 slew rate
70% to 30% V
1)
Not subject to production test, specified by design
2)
Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one
layer, 70 µm thick) for V
3)
Not subject to production test, parameters are calculated from R
bb
connection. PCB is vertical without blown air.
bb
t
ON
t
OFF
dV/ dt
-dV/
t
d
OFF
ON
0.1 0.25 0.5 V/µs RL = 12 Ω
0.1 0.25 0.5 V/µs RL = 12 Ω
100 250 µs RL = 12 Ω
V
= 13.5 V
bb
120 250 µs RL = 12 Ω
V
= 13.5 V
bb
V
= 13.5 V
bb
V
= 13.5 V
bb
and R
DS(ON)
th
Note: Characteristics show the deviation of parameter at the given supply voltage and
junction temperature. Typical values show the typical parameters expected from
manufacturing.
Data Sheet 14 V1.0, 2004-01-23
Page 15
Smart High-Side Power Switch
BTS 5234L
4.2 Protection Functions
The device provides embedded protective functions. Integrated protection functions are
designed to prevent IC destruction under fault conditions described in the data sheet.
Fault conditions are considered as “outside” normal operating range. Protection
functions are neither designed for continuous nor repetitive operation.
4.2.1 Over Load Protection
The load current I
is limited by the device itself in case of over load or short circuit to
OUT
ground. There are three steps of current limitation which are selected automatically
V
depending on the voltage
V
the OUT pin is
25
20
15
10
- VDS. Please refer to following figure for details.
bb
I
L
5
across the power DMOS. Please note that the voltage at
DS
V
5 101520
DS
Curr ent Limit at ion.em f
Figure 10 Current Limitation (minimum values)
Current limitation is realized by increasing the resistance of the device which leads to
rapid temperature rise inside. A temperature sensor for each channel causes an
overheated channel to switch off to prevent destruction. After cooling down with thermal
hysteresis, the channel switches on again. Please refer to Figure 11 for details.
IN
I
L
I
IS
I
L(LIM)
t
OFF( SC)
I
L(SCr)
t
t
t
OverLoad .emf
Figure 11 Shut Down by Over Temperature with Current Limitation
In short circuit condition, the load current is initially limited to
the current limitation level is reduced to
I
by switching off the device (VIN = 0 V).
L(LIM)
I
L(SCr)
. The current limitation level is reset to
I
Data Sheet 15 V1.0, 2004-01-23
. After thermal restart,
L(LIM)
Page 16
Smart High-Side Power Switch
BTS 5234L
4.2.2 Reverse Polarity Protection
In case of reverse polarity, the intrinsic body diode causes power dissipation. Additional
power is dissipated by the integrated ground resistor. Use following formula for
estimation of total power dissipation
P
diss(rev)
P
diss(rev)
∑
all channels
The reverse current through the intrinsic body diode has to be limited by the connected
load. The current through sense pins IS1 and IS2 has to be limited (please refer to
maximum ratings on Page 8). The current through the ground pin (GND) is limited
internally by
R
. The over-temperature protection is not active during reverse polarity.
GND
in reverse polarity mode.
2
V
V
DS(rev)IL
⋅()
-------------- -+=
R
bb
GND
4.2.3 Over Voltage Protection
In addition to the output clamp for inductive loads as described in Section 4.1.3, there is
a clamp mechanism for over voltage protection. Because of the integrated ground
resistor, over voltage protection does not require external components.
As shown in Figure 12, in case of supply voltages greater than
V
bb(AZ)
transistor switches on and the voltage across logic part is clamped. As a result, the
internal ground potential rises to V
bb
- V
bb(AZ)
. Due to the ESD zener diodes, the
potential at pin IN1, IN2 and SEN rises almost to that potential, depending on the
impedance of the connected circuitry.
VBB
OUT
V
IN
IS
SEN
ZD
ZD
R
IN
R
SEN
ESD
logic
internal ground
AZ
R
GND
, the power
OUT
GND
OverV olt age . emf
Figure 12 Over Voltage Protection
4.2.4 Loss of Ground Protection
In case of complete loss of the device ground connections, but connected load ground,
the BTS 5234L securely changes to or keeps in off state.
Data Sheet 16 V1.0, 2004-01-23
Page 17
Smart High-Side Power Switch
BTS 5234L
4.2.5 Electrical Characteristics
Unless otherwise specified:
V
= 9 V to 16 V, Tj = -40 °C to +150 °C , typical values: Vbb = 13.5 V, Tj = 25 °C
bb
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Over Load Protection
4.2.1 Load current limitation
4.2.2 Repetitive short circuit
current limitation
4.2.3 Initial short circuit shut
down time
4.2.4 Thermal shut down
temperature
4.2.5 Thermal hysteresis ∆
Reverse Battery
4.2.6 Drain-Source diode
voltage (V
OUT
>Vbb)
4.2.7 Reverse current
through GND pin
Ground Circuit
I
L(LIM)
I
L(SCr)
t
OFF(SC)
T
j(SC)
T
j
-V
DS(rev)
I
-
GND
23 42 A VDS = 7 V
V
14 28 A
6ATj = T
0.84 ms T
150 170
1)
7K-
°C -
DS
jStart
1)
= 14 V
j(SC)
= 25 °C
900 mV IL = -3.5 A
V
= -13.5 V
bb
T
= 150°C
j
65 mA Vbb = -13.5 V
1)
1)
1)
4.2.8 Integrated Resistor in
R
GND
115 220 350 Ω
GND line
Over Voltage
4.2.9 Over voltage
V
bb(AZ)
41 47 53 V Ibb = 2 mA
protection
Loss of GND
4.2.10 Output leakage
I
L(GND)
current while GND
disconnected
1)
Not subject to production test, specified by design
2)
no connection at these pins
Data Sheet 17 V1.0, 2004-01-23
1mAIIN = 0, I
= 0,
I
IS
I
= 0 1)
GND
SEN
= 0,
2)
Page 18
Smart High-Side Power Switch
BTS 5234L
4.3 Diagnosis
For diagnosis purpose, the BTS 5234L provides an Enhanced IntelliSense signal at pins
I
IS1 and IS2. This means in detail, the current sense signal
k
the load current (ratio
occurs. In case of open load in OFF-state, the voltage
= IL / IIS), is provided in ON-state as long as no failure mode
ILIS
V
IS(fault)
, a proportional signal to
IS
is fed to the diagnosis pin.
S
OL
µC
R
R
lim
lim
R
IS1RIS2
IN1
IS1
SEN
IN2
IS2
VBB
I
IS1
gate control
R
IN1
0
1
R
SEN
R
IN2
0
1
GND
1
0
channel 1
channel 2
0
1
gate control
diagnosis
V
IS(fa ul t)
V
OUT(OL)
I
IS2
OUT1
OUT2
R
OL
load
Sense. emf
Figure 13 Block Diagram: Diagnosis
Table 1 Truth Table
Operation Mode Input
Level
Output
Level
Diagnostic Output
SEN = H SEN = L
Normal Operation (OFF) L Z Z Z
Short Circuit to GND Z Z Z
Over Temperature Z Z Z
Short Circuit to V
bb
Open Load <
Data Sheet 18 V1.0, 2004-01-23
V
> V
V
bb
OUT(OL)
OUT(OL)
V
V
IS
IS
= V
= V
IS(fault)
Z
IS(fault)
Z
Z
Z
Page 19
Table 1 Truth Table
Smart High-Side Power Switch
BTS 5234L
Operation Mode Input
Level
Normal Operation (ON) H ~V
Current Limitation <
Short Circuit to GND <<
Output
Level
V
V
bb
bb
bb
Diagnostic Output
SEN = H SEN = L
I
= IL/ k
IS
ILIS
Z
ZZ
ZZ
Over Temperature Z Z Z
Short Circuit to V
bb
Open Load
L = Low Level, H = High Level, Z = high impedance, potential depends on leakage currents and external circuit
V
~V
bb
bb
I
IS
< IL/ k
ILIS
Z
ZZ
4.3.1 ON-State Diagnosis
The standard diagnosis signal is a current sense signal proportional to the load current.
k
The accuracy of the ratio (
following Figure 14 for details. Usually a resistor
pin. It is recommended to use sense resistors
= IL / IIS) depends on the temperature. Please refer to
ILIS
R
is connected to the current sense
IS
R
> 500 Ω. A typical value is 4.7 kΩ.
IS
8000
7000
6000
5000
ILIS
k
4000
3000
2000
1000
0 0.5 1 1.5 2 2.5 3 3.5 4
Figure 14 Current sense ratio k
ILIS
1)
dummy
Tj = 150°C
dummy
Tj = -40°C
I
/A
1)
The curves show the behavior based on characterization data. The marked points are guaranteed in this Data
Sheet in Section 4.3.4 (Position 4.3.6).
Data Sheet 19 V1.0, 2004-01-23
Page 20
Smart High-Side Power Switch
BTS 5234L
In case of over current as well as over temperature, the current sense signal is switched
off. As a result, one threshold is enough to distinguish between normal and faulty
operation. Open load and over load can be differentiated by switching off the channel
and using open load detection in off-state.
I
Details about timings between the diagnosis signal
I
load current
IN
OFF
V
OUT
I
L
in ON-state can be found in Figure 15.
L
ON
t
ON
and the output voltage V
IS
OUT
t
t
and
t
I
IS
sIS( O N)
t
sIS( L C)
Figure 15 Timing of Diagnosis Signal in ON-state
4.3.2 OFF-State Diagnosis
Details about timings between the diagnosis signal IIS and the output voltage V
load current
IN
V
OUT
I
L
I
in OFF-state can be found in Figure 16.
L
ON OFF
t
OFF
Open Load
t
t
Swit chOn . emf
and
OUT
t
t
t
I
IS
d(fault)
t
s( fau lt)
V
IS( fa ul t)
/ R
S
t
t
Swit chOf f.emf
Figure 16 Timing of Diagnosis Signal in OFF-state
Data Sheet 20 V1.0, 2004-01-23
Page 21
Smart High-Side Power Switch
BTS 5234L
R
For open load diagnosis in off state an external output pull-up resistor (
recommended. For calculation of the pull-up resistor, just the external leakage current
I
leakage
and the open load threshold voltage V
OUT(OL)
has to be taken into account.
OL
) is
V
bb(min)
-----------------------------------------------------------=
I
leakage
R
OL
defines the leakage current in the complete system e.g. caused by humidity.
There is no internal leakage current from out to ground at BTS 5234L.
V
–
OUT(OL,max)
I
leakage
V
bb(min)
is the
minimum supply voltage at which the open load diagnosis in off state must be ensured.
To reduce the stand-by current of the system, an open load resistor switch (SOL) is
recommended.
4.3.3 Sense Enable Function
The diagnosis signals have to be switched on by a high signal at sense enable pin (SEN).
See Figure 17 for details on the timing between SEN pin and diagnosis signal
Please note that the diagnosis is disabled, when no signal is provided at pin SEN.
SEN
t
I
IS
sIS(SEN)
t
d IS(SEN)
t
sIS(SEN)
t
d IS(SEN)
t
I
IS
.
t
SEN.emf
Figure 17 Timing of Sense Enable Signal
The SEN pin circuit is designed equal to the input pin. Please refer to Figure 5 for details.
R
The resistors
are recommended to limit the current through the sense pins IS1 and
lim
IS2 in case of reverse polarity and over voltage. Please refer to maximum ratings on
Page 8.
The stand-by current of the BTS 5234L is minimized, when both input pins (IN1 and IN2)
and the sense enable pin (SEN) are on low level.
Data Sheet 21 V1.0, 2004-01-23
Page 22
Smart High-Side Power Switch
BTS 5234L
4.3.4 Electrical Characteristics
Unless otherwise specified:
V
= 9 V to 16 V, Tj = -40 °C to +150 °C, V
bb
V
typical values:
= 13.5 V, Tj = 25 °C
bb
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
Open Load at OFF-State
SEN
= 5 V,
4.3.1 Open load detection
threshold voltage
4.3.2 Sense signal in case
of open load
4.3.3 Sense signal current
limitation
4.3.4 Sense signal invalid
after negative input
slope
4.3.5 Fault signal settling
time
Load Current Sense ON-State
4.3.6 Current sense ratio
I
= 40 mA
L
I
= 1.3 A
L
I
= 2.2 A
L
I
= 4.0 A
L
V
OUT(OL)
V
IS(fault)
I
IS(LIM)
t
d(fault)
t
s(fault)
k
ILIS
1.6 2.8 4.4 V
3.5 6.5 V VIN = 0 V
V
= V
OUT
I
= 1 mA
IS
2mAVIN = 0 V
V
= V
OUT
1.2 ms VIN = 5V to 0V
V
= V
OUT
200 µs VIN = 0 V
V
= 0 V to
OUT
V
>
I
= 1 mA
IS
V
= 5 V
IN
T
1000
2300
2410
2465
4035
3050
2920
2850
8000
3580
3380
3275
= -40 °C
j
bb
bb
bb
OUT(OL)
I
= 40 mA
L
I
= 1.3 A
L
I
= 2.2 A
L
I
= 4.0 A
L
4.3.7 Current sense voltage
V
IS(LIM)
1400
2465
2520
2580
3410
2920
2875
2870
6000
3275
3220
3160
5.0 6.2 7.5 V IIS = 0.5 mA
limitation
4.3.8 Current sense
I
IS(LH)
5µA VIN = 5 V
leakage/offset current
Data Sheet 22 V1.0, 2004-01-23
T
= 150 °C
j
I
= 3.5 A
L
I
= 0 A
L
Page 23
Smart High-Side Power Switch
BTS 5234L
Unless otherwise specified:
V
= 9 V to 16 V, Tj = -40 °C to +150 °C, V
bb
V
typical values:
= 13.5 V, Tj = 25 °C
bb
Pos. Parameter Symbol Limit Values Unit Test Conditions
min. typ. max.
SEN
= 5 V,
4.3.9 Current sense
leakage, while
diagnosis disabled
4.3.10 Current sense settling
time to
I
static ±10%
IS
after positive input
slope
4.3.11 Current sense settling
I
time to
static ±10%
IS
after change of load
current
Sense Enable
4.3.12 Input resistance
4.3.13 L-input level
4.3.14 H-input level
4.3.15 L-input current
I
IS(dis)
t
sIS(ON)
t
sIS(LC)
R
SEN
V
SEN(L)
V
SEN(H)
I
SEN(L)
2µA V
300 µs VIN = 0V to 5V
50 µs
1.8 3.5 5.5 kΩ
-0.3 1.0 V
2.5 5.7 V
31875µAV
= 0 V
SEN
I
= 3.5 A
L
I
= 3.5 A
L
1)
V
= 5 V
IN
I
= 1.3 A to 2.2 A
L
1)
= 0.4 V
SEN
4.3.16 H-input current
4.3.17 Current sense settling
I
SEN(H)
t
sIS(SEN)
time
4.3.18 Current sense
t
dIS(SEN)
deactivation time
1)
Not subject to production test, specified by design
10 38 75 µA V
325µsV
V
V
25 µs V
I
R
= 5 V
SEN
= 0V to 5V
SEN
= 0 V
IN
> V
OUT
= 5V to 0V
SEN
= 3.5 A
L
= 5 kΩ
S
OUT(OL)
1)
Data Sheet 23 V1.0, 2004-01-23
Page 24
Smart High-Side Power Switch
BTS 5234L
5 Package Outlines BTS 5234L
P-DSO-12-2
(Plastic Dual Small Outline Package)
1)
±0.1
ø0.8 x 0.1
6.4
A
8˚ 8˚
0.1 12x
5 x1=
0.4
1
5
+0.13
5.1
-0.05
16
4)
Depth
7.8
(Heatslug)
0.25
±0.1
712
±0.1
3)
2)
+0.1
±0.1
2.35
0
±0.05
0.1
0.8
0.1
C
Seating Plane
M
C
AB
±0.1
(1.8)
1.6
±0.1
4.2
(1.55)
2.6 MAX.
Package Outlines BTS 5234L
1)
±0.1
7.5
B
+0.075
-0.035
0.25
C
0.7
(0.2)
(4.4)
±0.3
10.3
±3˚
5˚
±0.15
0.25 B
1)
Does not include plastic or metal protrusion of 0.15 max. per side
2)
Stand OFF
3)
Stand OUT
4)
Pin 1 Index Marking; Polish finish
All package corners max. R 0.25
You can find all of our packages, sorts of packing and others in our
Infineon Internet Page “Products”: http://www.infineon.com/products.
SMD = Surface Mounted Device
Dimensions in mm
Data Sheet 24 V1.0, 2004-01-23
Page 25
Smart High-Side Power Switch
BTS 5234L
6 Revision History
Version Date Changes
V1.0 04-01-23 initial version
Revision History
Data Sheet 25 2004-01-23
Page 26
Smart High-Side Power Switch
BTS 5234L
Revision History
Data Sheet 26 V1.0, 2004-01-23
Page 27
Smart High-Side Power Switch
BTS 5234L
Edition 2004-01-23
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81541 München, Germany
© Infineon Technologies AG 1/31/04.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding
circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide.
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.
Data Sheet 27 2004-01-23
Page 28
http://www.infineon.com
Published by Infineon Technologies AG
Loading...