Datasheet BTS 452 R Datasheet (INFINEON)

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Smart Power High-Side-Switch

BTS 452 R

Features

• Overload protection

• Current limitation

• Short circuit protection

• Thermal shutdown with restart

Product Summary

Overvoltage protection V

Operating voltage V

On-state resistance R

Nominal load current I

• Overvoltage protection

(including load dump)

• Fast demagnetization of inductive loads

• Reverse battery protection

with external resistor

• Open drain diagnostic output for overtemperature

and short circuit

• Open load detection in OFF - State

with external resistor

• CMOS compatible input

bb(AZ

bb(on

ON

L(ISO

62 V

6...52 V

200 mΩ

1.8 A

P-TO252-5-11

• Loss of GND and loss of V

protection

bb

• ESD - Protection

• Very low standby current

Application

• All types of resistive, inductive and capacitive loads

• µC compatible power switch for 12 V, 24 V and 42 V DC applications

• Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input
and diagnostic feedback, monolithically integrated in Smart SIPMOS technology.

Providing embedded protective functions.

Page 1

2004-01-27

Block Diagram

IN

ESD

ST

Voltage
source

V

Logic

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Temperature

sensor

+ V

BTS 452 R

bb

OUT

Load

GND

Signal GND

miniPROFET

Pin Symbol Function

1

2

3

4

5

GND Logic ground

IN Input, activates the power switch in case of logic high signal

Vbb Positive power supply voltage

ST Diagnostic feedback

OUT Output to the load

TAB Vbb Positive power supply voltage

Pin configuration

Top view



Load GND

Tab = V

BB

1 2 (3) 4 5

GND IN ST OUT

Page 2

2004-01-27

BTS 452 R

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)

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Maximum Ratings at Tj = 25°C, unless otherwise specified

Parameter Symbol Value Unit

Supply voltage V

Supply voltage for full short circuit protection V

Continuous input voltage V

Load current (Short - circuit current, see page 5) I

Current through input pin (DC) I

Operating temperature T
Storage temperature T

Power dissipation

1)

Inductive load switch-off energy dissipation

1)2)

P

E

single pulse, (see page 9)

Tj =150 °C, IL = 1 A

Load dump protection2) V

R

=2Ω, t

I

R

= 13.5 Ω

L

R

= 27 Ω

L

=400ms, VIN= low or high, VA=13,5V

d

LoadDump

3)

= VA + V

V

S

bb

bb(SC

IN

L

IN

j
stg
tot

AS

Loaddump

52 V

50

-10 ... +16

self limited A

± 5

-40 ...+150

-55 ... +150

41.6 W

150 mJ

73.5

88.5

mA

°C

V

Electrostatic discharge voltage (Human Body Model)

V

ESD

according to ANSI EOS/ESD - S5.1 - 1993

ESD STM5.1 - 1998

Input pin

all other pins

Thermal Characteristics

junction - case:

Thermal resistance @ min. footprint R

Thermal resistance @ 6 cm2 cooling area

1

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2

not subject to production test, specified by design
3

V

Loaddump

Supply voltages higher than V

150Ω resistor in GND connection. A resistor for the protection of the input is integrated.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .

require an external current limit for the GND pin, e.g. with a

bb(AZ)

1)

R

R

thJC

th(JA

th(JA

- - 3 K/W

- 80 - K/W

- 45 60

kV

± 1
± 5

Page 3

2004-01-27

BTS 452 R

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p)

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = -40...+150°C, V

= 12..42V, unless otherwise specified min. typ. max.

bb

Load Switching Capabilities and Characteristics

On-state resistance

T

= 25 °C, IL = 1 A, Vbb = 9...52 V

j

T

= 150 °C

j

Nominal load current; Device on PCB 1)

T

= 85 °C, VON = 0.5 V

C

Turn-on time to 90% V

R

= 47 Ω

L

Turn-off time to 10% V

R

= 47 Ω

L

Slew rate on 10 to 30% V

R

= 47 Ω, V

L

= 13.5 V

bb

Slew rate off 70 to 40% V

R

= 47 Ω, V

L

= 13.5 V

bb

OUT

OUT

OUT

OUT

,

,

R

ON

I

L(ISO)

t

on

t

off

dV/dt

-dV/dt

on

off

-

-

150

270

200

380

mΩ

1.8 2.2 - A

- 80 180

µs

- 80 200

- 0.7 2

V/µs

- 0.9 2

Operating Parameters

Operating voltage V

Undervoltage shutdown of charge pump

T

= -40...+85 °C

j

T

= 150 °C

j

Undervoltage restart of charge pump V

Standby current

T

= -40...+85 °C, VIN = low

j

Tj = +150 °C 2), VIN = low

Leakage output current (included in I

bb(off)

)

bb(on

V

bb(under)

bb(u c

I

bb(off)

I

L(off)

6 - 52 V

-

-

- 4 5.5

-

-

- - 5

VIN = low

Operating current

I

GND

- 0.8 2 mA

VIN = high

1

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 17)
2

higher current due temperature sensor

-

-

-

-

4

5.5

15

18

µA

Page 4

2004-01-27

BTS 452 R

j

j

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = -40...+150°C, V

Protection Functions

= 12..42V, unless otherwise specified min. typ. max.

bb

1)

Initial peak short circuit current limit (pin 3 to 5)

T

= -40 °C, Vbb = 20 V, tm = 150 µs

j

T

= 25 °C

j

T

= 150 °C

j

T

= -40...+150 °C, Vbb > 40 V , ( see page 12 )

j

Repetitive short circuit current limit

Tj = Tjt (see timing diagrams)

Vbb < 40V

Vbb > 40V

Output clamp (inductive load switch off)

at V

= Vbb - V

OUT

ON(CL)

,

Ibb = 4 mA

Overvoltage protection 3)

Ibb = 4 mA

I

L(SCp)

I

L(SCr)

V

ON(CL)

V

bb(AZ)

-

-

4

-

-

-

-

6.5

-

52)

6

4.5

A

9

-

-

-

-

-

59 63 - V

62 - -

Thermal overload trip temperature T

Thermal hysteresis ∆T

t

t

150 - - °C

- 10 - K

Reverse Battery

Reverse battery

Drain-source diode voltage (V

T

= 150 °C

j

1

Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2

not subject to production test, specified by design
3

see also V

4

Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has

to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).

ON(CL)

4)

OUT

in circuit diagram on page 8

> Vbb)

-V

-V

bb

ON

- - 52 V

- 600 - mV

Page 5

2004-01-27

BTS 452 R

)

)

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)

)

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = -40...+150°C, V

= 12..42V, unless otherwise specified min. typ. max.

bb

Input and Status feedback

Input turn-on threshold voltage V

Input turn-off threshold voltage V

Input threshold hysteresis ∆V

Off state input current

I

IN(off)

VIN = 0.7 V

On state input current

I

IN(on)

VIN = 5 V

Status output (open drain), Zener limit voltage

V

IST = 1.6 mA

Status output (open drain), ST low voltage

T

= -40...+25 °C, IST = 1.6 mA

j

T

= 150 °C, IST = 1.6 mA

j

Status invalid after positive input slope 1)

V

t

d(ST+)

Vbb = 20 V

IN(T+

IN(T-

IN(T

ST(high)

ST(low)

- - 2.2 V

0.8 - -

- 0.4 -

1 - 25 µA

3 - 25

5.4 6.1 - V

-

-

-

-

0.4

0.6

- 120 160 µs

Status invalid after negative input slope

1)

t

Input resistance (see page 8) R

Diagnostic Characteristics

Short circuit detection voltage V

3)

2)

V

R

Open load detection voltage

Internal output pull down

( see page 9 and 14 )

V

OUT(OL)

1

no delay time after overtemperature switch off and short circuit in on-state
2

External pull up resistor required for open load detection in off state.
3

not subject to production test, specified by design

= 4 V

d(ST-

I

OUT(SC

OUT(OL

O

- 250 400

2 3.5 5 kΩ

- 2.8 - V

- 3 4

65 200 750 kΩ

Page 6

2004-01-27

BTS 452 R

Input

level

Normal

operation

Short circuit

to GND

Short circuit to

Vbb (in off-state)

Overload L

Overtemperature L

Open Load in

off-state

H

H

H

H

H

H

Output

Status

level

L

L

L

L

L

H

L

L *

H

H

L

H **

L

L

Z

H

H

H

H

L

L

H

H

H

H

L

H (L1))

H

*) Out ="L": V

**) Out ="H": V

< 2.8V typ.

OUT

> 2.8V typ.

OUT

Z = high impedance, potential depends on external circuit

1

with external resistor between Vbb and OUT

Page 7

2004-01-27

BTS 452 R

Terms

I

bb

I

IN

IN

I

ST

ST

V

V

ST

IN

V

bb

PROFET

R

GND

V

GND

bb

OUT

I

GND

Input circuit (ESD protection)

R

ESD-

I

ZD

I

I

I

GND

IN

Inductive and overvoltage output clamp

+ V

bb

V

Z

V

I

V

L

V

ON

GND

OUT

ON

OUT

VON clamped to 59V min.

Overvoltage protection of logic part

The use of ESD zener diodes as voltage clamp
at DC conditions is not recommended

Reverse battery protection

± 5V

R

ST

IN

ST

R

=150Ω, RI=3.5kΩ typ.,

GND

Temperature protection is not active during
inverse current

Logic

R

I

Power
Inverse
Diode

GND

R

GND

Signal GND

Power GND

V

=6.1V typ., VZ2=V

Z1

R

=3.5 kΩ typ., R

V

-

bb

I

GND

bb(AZ)

=150Ω

=62V min.,

Status output

OUT

R

R

L

ST(ON)

GND

+5V

ST

ESD­ZD

Page 8

2004-01-27

BTS 452 R

Open-load detection

OFF-state diagnostic condition:

V

> 3V typ.; IN=low

OUT

R

EXT

OFF

V

OUT

Logic

unit

Open load

detection

Signal GND

R

O

GND disconnect

V

bb

PROFET

GND

V

GND

OUT

VbbV

IN

ST

V

IN

ST

GND disconnect with GND pull up

Vbb disconnect with charged inductive

load

high

V

bb

IN

ST

V

bb

PROFET

GND

OUT

Inductive Load switch-off energy
dissipation

E

bb

E

AS

E

V

IN

=

ST

bb

PROFET

GND

OUT

L

Z

L

{

R

L

Load

E

L

E

R

V

IN

ST

V

V

V

bb

IN

ST

bb

PROFET

GND

V

GND

OUT

Energy stored in load inductance: EL = ½ * L * I

While demagnetizing load inductance,
the enérgy dissipated in PROFET is
E

= Ebb + EL - E

AS

with an approximate solution for R

= V

R

ON(CL)

* iL(t) dt,

> 0Ω:

L

IL

*

E

AS

Page 9

L

=+ +

*

2

VV

*( | )*ln(

L

bb OU T CL

R

()|

2004-01-27

2

L

IR

*

1

LL

V

||

OUT CL

()

)

BTS 452 R

Typ. transient thermal impedance

Z

=f(tp) @ 6cm2 heatsink area

thJA

Parameter: D=tp/T

2

10

K/W

thJA

Z

10

10

10

10

-1

-2

1

0

10

D=0.5

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

D=0

-7

10

-6

-5

-4

-3

-2

10

10

10

10

-1

10

10 0 10 1 10

Typ. transient thermal impedance

Z

=f(tp) @ min. footprint

thJA

Parameter: D=tp/T

2

10

10

10

10

10

1

0

-1

-2

10

D=0.5

D=0.2

D=0.1

D=0.05

D=0.02

D=0.01

D=0

-7

-6

10

10

-5

-4

-3

-2

10

10

10

-1

10

10 0 10 1 10

2

t

4

10

s

p

K/W

thJA

Z

2

t

4

10

s

p

Typ. on-state resistance

R

= f(Tj) ; V

ON

300

mΩ

200

ON

R

150

100

50

0

-40 -20 0 20 40 60 80 100 120

= 13,5V ; V

bb

= high

in

°C

T

Typ. on-state resistance

R

= f(Vbb); IL = 1 A ; V

ON

400

mΩ

300

ON

250

R

200

150

100

50

0

160

j

0 5 10 15 20 25 30 35 40

= high

in

150°C

25°C

-40°C

50

V

V

bb

Page 10

2004-01-27

BTS 452 R

Typ. turn on time

t

= f(Tj); R

on

160

µs

120

on

100

t

80

60

40

20

0

-40 -20 0 20 40 60 80 100 120

= 47Ω

L

°C

T

Typ. turn off time

t

= f(Tj); R

off

160

µs

9V

120

13.5V

42V

160

j

100

off

t

80

60

40

20

0

-40 -20 0 20 40 60 80 100 120

= 47Ω

L

9...42V

°C

T

160

j

Typ. slew rate on

dV/dt

V/µs

dV

= f(Tj) ; R

on

2

1.6

on

1.4

dt

1.2

1

0.8

0.6

0.4

0.2

0

-40 -20 0 20 40 60 80 100 120

= 47 Ω

L

°C

T

Typ. slew rate off

dV/dt

V/µs

-dV

42V

13.5V

9V

160

j

off

off

3.5

2.5

= f(Tj); R

= 47 Ω

L

dt

2

1.5

1

0.5

0

-40 -20 0 20 40 60 80 100 120

°C

T

42V

13.5V
9V

160

j

Page 11

2004-01-27

BTS 452 R

Typ. standby current

I

bb(off)

= f(Tj) ; V

10

= 42V ; V

bb

µA

bb(off)

I

6

4

2

0

-40 -20 0 20 40 60 80 100 120

IN

= low

°C

T

Typ. leakage current

I

= f(Tj) ; Vbb = 42V ; VIN = low

L(off)

2.5

µA

L(off)

I

1.5

1

0.5

0

160

j

-40 -20 0 20 40 60 80 100 120

°C

T

160

j

Typ. initial peak short circuit current limit

I

L(SCp)

= f(Vbb)

10

A

L(SCp)

I

6

4

2

0

0 10 20 30 40

-40°C

25°C

150°C

V

60

V

bb

Typ. initial short circuit shutdown time

t

off(SC)

= f(T

6

j,start

) ; V

bb

= 20V

ms

4

off(SC)

t

3

2

1

0

-40 -20 0 20 40 60 80 100 120

°C

T

j

160

Page 12

2004-01-27

BTS 452 R

Typ. input current

I

IN(on/off)

V

INlow

µA

IN

I

= f(Tj); V

≤ 0,7V; V

12

8

6

4

2

0

-40 -20 0 20 40 60 80 100 120

INhigh

= 13,5V; V

bb

= 5V

Typ. input threshold voltage

= low/high

IN

°C

T

Typ. input current

IIN = f(VIN); V

50

µA

IN

I

30

on

off

160

j

20

10

0

0 1 2 3 4 5 6

= 13.5V

bb

-40...25°C 150°C

V

V

8

IN

Typ. input threshold voltage

V

IN(th)

IN(th)

V

= f(Tj) ; V

2

= 13,5V

bb

V

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

-40 -20 0 20 40 60 80 100 120

°C

T

V

= f(Vbb) ; Tj = 25°C

IN(th)

2

V

off

on

V

50

V

bb

on

1.6

off

160

j

1.4

IN(th)

V

1.2

1

0.8

0.6

0.4

0.2

0

0 10 20 30

Page 13

2004-01-27

BTS 452 R

Maximum allowable load inductance

for a single switch off

L = f(IL); T

4500

mH

3500

3000

L

2500

2000

1500

1000

500

0

0 0.25 0.5 0.75 1 1.25 1.5

=150°C, R

jstart

42V

13.5V

=0Ω

L

A

I

L

Typ. status delay time

t

d(ST+/-)

t

2

= f(Vbb); Tj = 25°C

300

µs

250

225

200

d(ST+/-)

175

150

125

100

75

50

25

0

0 10 20 30

td(ST-)

td(ST+)

V

50

V

bb

Maximum allowable inductive switch-off

energy, single pulse

EAS = f(IL); T

1200

mJ

800

AS

E

600

400

200

0

0 0.25 0.5 0.75 1 1.25 1.5

= 150°C, Vbb = 13,5V

jstart

2

A

I

L

Typ. internal output pull down

RO = f(Vbb)

800

kΩ

600

O

500

R

400

300

200

100

0

0 10 20 30

150°C

25°C

-40°C

V

50

V

bb

Page 14

2004-01-27

Timing diagrams

BTS 452 R

Figure 1a: Vbb turn on:

IN

V

bb

I

L

ST

Figure 2b: Switching a lamp,

IN

ST

V

OUT

I

t

L

Figure 2a: Switching a resistive load,
turn-on/off time and slew rate definition

IN

V

OUT

90%

10%

ST

I

L

t

on

dV/ dton

t

off

dV/ dtoff

Figure 2c: Switching an inductive load

IN

ST

V

OUT

t

I

L

Page 15

2004-01-27

BTS 452 R

IN

Figure 3a: Turn on into short circuit,
shut down by overtemperature, restart by cooling

IN

V

OUT

Output short to GND

I

L

ST

I

L( SCp )

t

m

t

d(ST+)

I

L( SCr )

t

Heating up of the chip may require several milliseconds, depending
on external conditions.

Figure 4: Overtemperature:
Reset if Tj < T

jt

Figure 3b: Short circuit in on-state
shut down by overtemperature, restart by cooling

V

OUT

I

ST

L

normal

operation

O u tput s h o rt to G N D

I

L(SCr)

t

Figure 5: Undervoltage restart of charge pump

V

o n

IN

ST

I

L

T

V

b b ( u c p )

V

b b ( u n d e r )

V

b b

J

Figure 7: Overvoltage

t

IN

V

V

ST

bb

OUT

V

ON(CL)

V

OUT(OL)

t

Page 16

2004-01-27

Package and ordering code

all dimensions in mm

Package: Ordering code:

P-TO252-5-11 Q67060-S7405

+0.15

6.5

-0.05

±0.1

1

-0.2

(4.24)

6.22

0.15 MAX.
per side

4.56

1)

(5)

5.7 MAX.

±0.5

9.98

1) Includes mold flashes on each side.
All metal surfaces tin plated, except area of cut.

Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee
of characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your
nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide
(see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the
types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

±0.15

0.8

5 x 0.6

1.14

A

±0.1

0.25MA

B

B

+0.20

0.9

-0.01

0...0.15

0.51 MIN.

2.3

+0.05

-0.10

0.5

0.5

+0.08

-0.04

0.1

+0.08

-0.04

B

Printed circuit board (FR4, 1.5mm thick, one

layer 70µm, 6cm2 active heatsink area ) as
a reference for max. power dissipation P

nominal load current I

resistance R

thja

L(nom)

and thermal

BTS 452 R

tot

Page 17

2004-01-27