Datasheet BTS 441 R Datasheet (lnfineon)

现货库存、技术资料、百科信息、热点资讯，精彩尽在鼎好!

BTS 441 R

Smart Highside Power Switch One Channel: 20mΩ Status Feedback

Product Summary Package

On-state Resistance RON Operating Voltage V Nominal load current I Current limitation I

bb(on) L(ISO) L(lim)

20mΩ

4.75 ... 41V

21A

65A

General Description

• N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically integrated in Smart SIPMOS® technology.

• Providing embedded protective functions.

TO-263-5-2 TO-220-5-12

SMD Straight

Application

• µC compatible power switch for 5V, 12 V and 24 V DC applications

• All types of resistive, inductive and capacitve loads

• Most suitable for loads with high inrush currents, so as lamps

• Replaces electromechanical relays, fuses and discrete circuits

Basic Funktions

• Very low standby current

• Optimized static electromagnetic compatibility (EMC)

• µC and CMOS compatible

• Fast demagnetization of inductive loads

• Stable behaviour at undervoltage

Protection Functions

• Short circuit protection

• Current limitation

• Overload protection

• Thermal shutdown

• Overvoltage protection (including load dump) with external

GND-resistor

• Reverse battery protection with external GND-resistor

• Loss of ground and loss of Vbb protection

• Electrostatic discharge (ESD) protection

IN

ST

Vbb

Logic

with

protection

functions

OUT

Diagnostic Function

• Diagnostic feedback with open drain output

• Open load detection in OFF-state

• Feedback of thermal shutdown in ON-state

PROFET

GND

Load

Infineon Technologies AG 1 2003-Oct-01

BTS 441 R

p

Functional diagram

IN

ST

GND

overvoltage

rotection

internal

voltage supply

ESD

logic

gate

control

+

charge

pump

temperature

sensor

Open load

detection

current limit

clamp for

inductive load

VBB

OUT

LOAD

PROFET

Pin Definitions and Functions

Symbol Function

1

2 IN

3 Vbb

4 ST

GND

Input, activates the power switch in

Positive power supply voltage

The tab is shorted to pin 3

Diagnostic feedback, low on failure

5 OUT

Tab Vbb

Positive power supply voltage

The tab is shorted to pin 3

Logic ground

case of logical high signal

Output to the load

Pin configuration

(top view)

Tab = V

BB

1 2 (3) 4 5

GND IN ST OUT

Infineon Technologies AG 2 2003-Oct-01

BTS 441 R

Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 43 V Supply voltage for full short circuit protection

T

=-40 ...+150°C

j Start

Load dump protection1) V

2)

R

= 2 Ω, RL= 0,5 Ω, td= 200 ms, IN= low or high

I

LoadDump

= VA + Vs, VA = 13.5 V

Load current (Short-circuit current, see page 5) IL self-limited A Operating temperature range Storage temperature range Power dissipation (DC) ; TC≤25°C P Maximal switchable inductance, single pulse

V

= 12V, T

bb

(see diagram, p.7) I

= 150°C, TC = 150°C const.

j,start

= 21 A, RL= 0 Ω: E

L(ISO)

4)

AS

=0.7J:

Electrostatic discharge capability (ESD) IN: (Human Body Model) ST: Out to all other pins shorted:

acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF

Input voltage (DC) VIN -10 ... +16 V Current through input pin (DC)

Current through status pin (DC)

see internal circuit diagrams page 7

Thermal resistance chip - case: junction - ambient (free air): SMD version, device on pcb5): ≤ 33

Vbb 34 V V

Load dump

T

j

T

stg

125 W

tot

3)

60 V

-40 ...+150

-55 ...+150

°C

ZL 2.1 mH

V

1.0

ESD

kV

4.0

8.0

I

IN

IST

R

thJC

R

thJA

±2.0 ±5.0

≤ 1

≤ 75

mA

K/W

1)

Supply voltages higher than V

resistor in the GND connection. A resistor for the protection of the input is integrated.

2)

RI = internal resistance of the load dump test pulse generator

3)

V

Load dump

4)

E

AS

5)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb

connection. PCB is vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

is the maximum inductive switch off energy

Infineon Technologies AG 3 2003-Oct-01

require an external current limit for the GND pin, e.g. with a 150 Ω

bb(AZ)

BTS 441 R

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified

Load Switching Capabilities and Characteristics

min typ max

On-state resistance (V

IL = 2 A Vbb≥7V T

see diagram page 9

Tj=25 °C:

:

Nominal load current (pin 3 to 5)

‘ISO 10483-1, 6.7:V

=0.5V, TC=85°C

ON

Output current (pin 5) while GND disconnected or

(pin3) to OUT (pin5));

bb

=150 °C:

j

RON

I

L(ISO)

I

L(GNDhigh)

GND pulled up6), Vbb=30 V, VIN= 0,

see diagram page 7

Turn-on time IN to 90% V Turn-off time IN to 10% V

OUT OUT

:

t

on

:

t

off

RL = 12 Ω, Slew rate on 10 to 30% V

OUT

, R

= 12 Ω,

L

Slew rate off 70 to 40% V

, RL = 12 Ω,

OUT

Operating Parameters

Operating voltage Tj =-40°C

dV /dton 0.1 -- 1 V/µs

-dV/dt

V

Tj =+25°C Tj =+105°C

6)

Tj =+150°C Overvoltage protection

I

= 40 mA Tj =+25...+150°C:

bb

Standby current (pin 3) VIN=0 see diagram page 9 T

Off-State output current (included in I

VIN=0

Operating current (Pin 1)9), VIN=5 V,

7)

Tj =-40°C:

8)

Tj=-40...+25°C:

Tj=+105°C6):

=+150°C:

j

)

bb(off)

V I

bb(off)

I

L(off)

I

GND

--

15 28

20 37

17 21 -- A

-- -- 2 mA

40

0.1 -- 1 V/µs

off

4.75

bb(on)

40

4.75

5.0

bb(AZ)

41 43

--

90

110

--

47

5

--

200 250

41 43 43 43

-52 10

10 25

-- 1.5 10 µA

-- 2 4 mA

mΩ

µs

V

µA

6)

not subject to production test, specified by design

7)

see also V

8)

Measured with load, typ. 40 µA when no load in off

9)

Add I

, if IST > 0, add IIN, if VIN>5.5 V

ST

in table of protection functions and circuit diagram page 7

ON(CL)

Infineon Technologies AG 4 2003-Oct-01

BTS 441 R

Parameter and Conditions Symbol Values Unit

at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified

min typ max

Protection Functions

Current limit (pin 3 to 5)

(see timing diagrams, page 9)

Repetitive short circuit current limit I

T

= Tjt (see timing diagrams, page 10)

j

Thermal shutdown time

(see timing diagram on page 10)

Output clamp (inductive load switch off) ;Tj =-40°C:

at V

OUT

= Vbb - V

ON(CL)

10)

11)12)

, IL= 40 mA T

=-40°C: I

Tj

=25°C:

Tj

=+150°C:

Tj

=25°C:

Tj,start

=25..150°C: V

j

-- -- 85 A

L(lim)

-40

-- 55 -- A

L(SCr)

T

-- 14 -- ms

off(SC)

41

ON(CL)

43

65

--

47

--

52

V

Thermal overload trip temperature Tjt 150 -- -- °C Thermal hysteresis Reverse battery (pin 3 to 1)

13)

Reverse battery voltage drop (V

IL = -2A

-Vbb -- -- 32 V > Vbb)

OUT

=+150°C:

Tj

∆

Tjt -- 10 -- K

-V

ON(rev)

-- 540 -- mV

10)

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

11)

not subject to production test, specified by design

12)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb

connection. PCB is vertical without blown air.

13)

Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source

diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 1 and circuit page 7).

Infineon Technologies AG 5 2003-Oct-01

BTS 441 R

Parameter and Conditions Symbol Values Unit

at Tj =-40...+150°C, Vbb = 12 V unless otherwise specified

min typ max

Diagnostic Characteristics

Open load detection voltage

Input and Status Feedback

14)

V

15)

OUT(OL)1

2 3 4 V

Input resistance see circuit page 7 RI 2.5 3.8 6.5 kΩ Input turn-on threshold voltage V Input turn-off threshold voltage V Input threshold hysteresis ∆ V Off state input current (pin 2) VIN = 0.4 V: I On state input current (pin 2) VIN = 5 V: I Delay time for status with open load after switch

t

1.2 -- 2.2 V

IN(T+)

0.8 -- -- V

IN(T-)

-- 0.3 -- V

IN(T)

1 -- 15 µA

IN(off)

4.5 12 24 µA

IN(on)

ST delay

-- -- 500 µs

off (see timing diagrams, page 11), Status output (open drain) Zener limit voltage IST = +1.6 mA:

ST low voltage IST = +1.6 mA::

V

ST(high)

V

ST(low)

5.4

--

6.1

--

0.4

--

V

Truth Table

Normal operation L

Open load L

Short circuit to Vbb L H H

Overtemperature L

L = "Low" Level Z = high impedance, potential depends on external circuit H = "High" Level Status signal valid after the time delay shown in the timing diagrams

14)

External pull up resistor required for open load detection in off state

15)

If a ground resistor R

16)

L, if potential at the Output exceeds the OpenLoad detection voltage

is used, add the voltage drop across this resistor.

GND

IN OUT ST

L

H

Z

L L

H H

16)

L

H L H H L

Infineon Technologies AG 6 2003-Oct-01

BTS 441 R

Terms

I

bb

V

bb

I

IN

2

I

V

ST

IN

V

Input circuit (ESD protection)

IN

ST

4

R

I

ESD-ZD

PROFET

GND

I

V

GND

1

bb

Leadframe, 3

OUT

I

GND

I

V

L

5

V

GND

The use of ESD zener diodes as voltage clamp at DC conditions is not recommended.

Status output

R

ST(ON)

+5V

ST

ON

OUT

Overvolt. and reverse batt. protection

+ 5V

R

ST

R

I

IN

Logic

ST

R

ST

V

Z1

R

= 6.1 V typ., VZ2 = 47 V typ., R

V

Z1

R

= 15 kΩ, RI= 3.5 kΩ typ.

ST

Signal GND

GND

V

Z2

PROFET

GND

Load GND

= 150 Ω,

GND

OUT

In case of reverse battery the load current has to be limited by the load. Temperature protection is not active

Open-load detection

OFF-state diagnostic condition: Open Load, if V

OFF

Logic

unit

> 3 V typ.; IN low

OUT

Open load

detection

R

Load

V

EXT

V

+ V

bb

OUT

bb

ESD-

GND

ESD-Zener diode: 6.1 V typ., max 5.0 mA; R at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may resul a drift of

Inductive and overvoltage output clamp

the zener voltage (increase of up to 1 V).

V

Z

ZD

ST(ON)

+ V

< 375 Ω

bb

GND disconnect

t in

IN

Signal GND

V

bb

PROFET

OUT

ST

GND

V

GND

OUT

≈ VIN - V

IN(T+)

.

V

clamped to 47 V typ.

ON

GND

PROFET

V

OUT

ON

VbbV

Any kind of load. In case of Input=high is V

IN

V

ST

Infineon Technologies AG 7 2003-Oct-01

BTS 441 R

GND disconnect with GND pull up

V

PROFET

- V

IN

bb

GND

V

GND

device stays off

IN(T+)

OUT

V

bb

Any kind of load. If V

Due to V

V

IN

> 0, no VST = low signal available.

GND

V

ST

GND

IN

ST

> V

Vbb disconnect with charged inductive load

Inductive load switch-off energy dissipation

E

bb

E

AS

V

E

L

bb

PROFET

GND

1

/

=

2

·L·I

OUT

2 L

IN

=

ST

Energy stored in load inductance:

While demagnetizing load inductance, the energy dissipated in PROFET is

E

Load

L

Z

L

{

R

E

L

E

R

L

high

V

bb

IN

ST

V

bb

PROFET

GND

OUT

For inductive load currents up to the limits defined by ZL (max. ratings and diagram on page 8) each switch is protected against loss of Vbb.

Consider at your PCB layout that in the case of Vbb disconnection with energized inductive load all the load current flows through the GND connection.

= Ebb + EL - ER= V

E

AS

ON(CL)·iL

with an approximate solution for RL > 0

· L

I

AS

=

L

(V

+ |V

OUT(CL)

bb

·R

2

L

|) ln (1+

E

Ω:

|V

(t) dt,

·R

I

L

OUT(CL)

)

|

Maximum allowable load inductance for a single switch off

L = f (I

L [mH]

1000

100

10

L

); T

j,start

150°C, V

=

= 12 V, RL = 0 Ω

bb

1

0.1

0 5 101520253035

I

[A]

L

Infineon Technologies AG Page 8 2003-Oct-01

BTS 441 R

Typ. on-state resistance

R

= f (Vbb,T

ON

R

[mΩ]

ON

40

); IL = 2 A, IN = high

j

35

Tj = 150°C

30

25

20

25°C

15

-40°C

10

5

3 5 7 9 30 40

V

bb

[V]

Typ. standby current

I

= f (T

bb(off)

[µA]

I

bb(off)

j

); V

= 9...34 V, IN1,2 = low

bb

0

15

10

5

0

-50 0 50 100 150 200

T

[°C]

j

Infineon Technologies AG Page 9 2003-Oct-01

BTS 441 R

Timing diagrams

Figure 1a: Vbb turn on:

IN

V

bb

V

OUT

ST open drain

proper turn on under all conditions

Figure 2b: Switching a lamp,

IN

ST

V

OUT

I

L

t

Figure 2a: Switching a resistive load, turn-on/off time and slew rate definition:

IN

V

OUT

90%

t

on

t

off

10%

I

dV/dton

L

dV/dtoff

Figure 3a: Short circuit shut down by overtemperature, reset by cooling

IN

I

L

t

ST

other channel: normal operation

I

L(lim)

I

L(SCr)

t

off(SC)

Heating up may require several milliseconds, depending on external conditions

t

Infineon Technologies AG 10 2003-Oct-01

BTS 441 R

y

f

Figure 4a: Overtemperature: Reset if T

IN

ST

V

OUT

T

J

<Tjt

j

Figure 5a: Open load: detection in OFF-state, turn on/off to open load

IN1

t

V

OUT1

I

L1

of

t

ST dela

ST

t

ST delay

. = 500µs Open load detection requires an external pull up resistor between OUT and VBB

Infineon Technologies AG 11 2003-Oct-01

BTS 441 R

Package and Ordering Code

All dimensions in mm

Published by

SMD: P-TO263-5-2 (tape&reel)

Sales code BTS441R G

Ordering code: Q67060-S6118

±0.2

10

±0.15

(15)

±0.3

1

±0.2

9.25

9.8

8.5

A

1)

8

±0.3

1.3

1.27

±0.5

4.7

0...0.15

5x0.8

±0.1

4x1.7

M

BA0.25

1)

Typical All metal surfaces tin plated, except area of cut.

±0.1

B

0.1

2.4

±0.3

2.7

8˚ max.

4.4

0.5

0.05

±0.1

0.1

Straight: P-TO220-5-12

Sales code BTS441R S

Ordering code: Q67060-S6119

±0.2

10

9.8

8.5

3.7

±0.15

1)

-0.15

A

1.27

B

4.4

±0.1

Attention please!

The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics.

Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not

limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in lifesupport devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

±0.3

17

1)

±0.3

15.65

13.4

±0.2

2.8

0.05

±0.2

9.25

±0.5

6x

0.8

11

±0.1

±0.5

13

±0.1

0.5

2.4

M

BA0.25

C

0...0.15

1.7

Typical

1)

All metal surfaces tin plated, except area of cut.

Infineon Technologies AG 12 2003-Oct-01