Datasheet BTS 117TC Datasheet

)

A

Smart Low Side Power Switch

HITFET BTS 117TC

Features

• Logic Level Input

• Input Protection (ESD)

•=Thermal shutdown with latch

• Overload protection

• Short circuit protection

Product Summary

Drain source voltage

On-state resistance

Current limit

Nominal load current

Clamping energy

• Overvoltage protection

• Current limitation

• Status feedback with external input resistor

• Analog driving possible

•

AEC qualified

• Green product (RoHS compliant)

Application

• All kinds of resistive, inductive and capacitive loads in switching or linear applications

• μC compatible power switch for 12 V and 24 V DC applications

• Replaces electromechanical relays and discrete circuits

V

DS

R

DS(on

I

D(lim

I

D(ISO

E

S

60 V

100

mΩ

7 A

3.5 A

1000 mJ

General Description

N channel vertical power FET in Smart SIPMOS® chip on chip technology. Providing embedded protection functions.

V

bb

LOAD

Drain

1

IN

ESD

dv/dt

lim itatio n limita tio n

Overload

protection

Current

Over-

temperature

protection

Overvoltage

protection

Short circuit

protection

Source

HITFET

2

3

+

M

Datasheet 1 Rev. 1.0, 2009-07-20

)

j

g

A

Smart Low Side Power Switch

HITFET BTS 117TC

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Value Unit

Drain source voltage

Drain source voltage for short circuit protection Continuous input current

1)

-0.2V ≤ VIN≤ 10V

< -0.2V or VIN > 10V

V

IN

Operating temperature

Storage temperature

Power dissipation

= 25 °C

T

C

Unclamped single pulse inductive energy

I

D(ISO)

Electrostatic discharge voltage

= 3.5 A

(Human Body Model)

according to MIL STD 883D, method 3015.7 and

EOS/ESD assn. standard S5.1 - 1993

Load dump protection V

LoadDump

2)

= VA + V

VIN=low or high; VA=13.5 V

= 400 ms, RI = 2 Ω, ID=0,5*3.5A

t

d

= 400 ms, RI = 2 Ω, ID= 3.5A

t

d

V

DS

V

DS(SC

I

IN

60 V

32

mA

no limit

| ≤ 2

| I

IN

T

P

E

V

st

tot

AS

ESD

- 40 ... +150 °C

- 55 ... +150

50 W

1000 mJ

3000 V

S

V

LD

75

70

Thermal resistance

junction - case:

junction - ambient:

SMD version, device on PCB:

1

In case of thermal shutdown a minimum sensor holding current of 500 μA has to be guaranteed (see also page 3).

2

V

Loaddump

3

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

PCB mounted vertical without blown air.

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

3)

2

(one layer, 70μm thick) copper area for Drain connection.

R

thJC

thJ

2.5 K/W

75

45

Datasheet 2 Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Electrical Characteristics

Parameter Symbol Values Unit

at Tj=25°C, unless otherwise specified min. typ. max.

Characteristics

Drain source clamp voltage

= - 40 ...+ 150°C, ID = 10 mA

T

j

Off state drain current

= 32 V, Tj = -40...+150 °C, VIN = 0 V

V

DS

Input threshold voltage

= 0.7 mA

I

D

Input current - normal operation, ID<I

= 10 V

V

IN

Input current - current limitation mode, ID=I

V

= 10 V

IN

D(lim)

:

D(lim)

Input current - after thermal shutdown, ID=0 A:

V

= 10 V

IN

Input holding current after thermal shutdown

1)

Tj = 25 °C

= 150 °C

T

j

On-state resistance

= 5 V, ID = 3.5 A, Tj = 25 °C

V

IN

= 5 V, ID = 3.5 A, Tj = 150 °C

V

IN

V

DS(AZ)

I

DSS

V

IN(th)

I

IN(1)

:

I

IN(2)

I

IN(3)

I

IN(H)

R

DS(on)

60 - 73 V

- - 5 μA

1.3 1.7 2.2 V

- 30 60 μA

- 120 300

800 2200 4000

500

300

-

90

180

-

120

240

mΩ

On-state resistance

= 10 V, ID = 3.5 A, Tj = 25 °C

V

IN

V

= 10 V, ID = 3.5 A, Tj = 150 °C

IN

Nominal load current (ISO 10483)

= 10 V, VDS = 0.5 V, TC = 85 °C

V

IN

1

If the input current is limited by external components, low drain currents can flow and heat the device.

Auto restart behaviour can occur.

Datasheet 3 Rev. 1.0, 2009-07-20

R

DS(on)

I

D(ISO)

-

80

160

100

200

3.5 - - A

j

Electrical Characteristics

Smart Low Side Power Switch

HITFET BTS 117TC

Parameter

Symbol Values Unit

at Tj=25°C, unless otherwise specified min. typ. max.

Characteristics

Initial peak short circuit current limit

V

= 10 V, VDS = 12 V

IN

Current limit

1)

I

D(SCp)

I

D(lim)

- 25 - A

7 10 15

VIN = 10 V, VDS = 12 V, tm = 350 μs,

T

= -40...+150 °C

j

Dynamic Characteristics

Turn-on time V

R

= 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V

L

to 90% ID:

IN

Turn-off time VIN to 10% ID:

R

= 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V

L

Slew rate on 70 to 50% Vbb:

R

= 4.7 Ω, VIN = 0 to 10 V, Vbb = 12 V

L

Slew rate off 50 to 70% Vbb:

R

= 4.7 Ω, VIN = 10 to 0 V, Vbb = 12 V

L

Protection Functions

2)

Thermal overload trip temperature

Unclamped single pulse inductive energy

I

= 3.5 A, Tj = 25 °C, Vbb = 32 V

D

I

= 3.5 A, Tj = 150 °C, Vbb = 32 V

D

t

on

t

off

-dVDS/dt

dVDS/dt

T

t

E

AS

on

off

- 40 70 μs

- 70 150

- 1 3 V/μs

- 1 3

150 165 - °C

1000

225

--

mJ

Inverse Diode

Inverse diode forward voltage

I

= 5*3.5A, tm = 300 μS, VIN = 0 V

F

1

Device switched on into existing short circuit (see diagram Determination of I

and a short circuit occurs, these values might be exceeded for max. 50 μs.

2

Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation.

Datasheet 4 Rev. 1.0, 2009-07-20

V

SD

). If the device is in on condition

D(lim)

- 1 - V

Smart Low Side Power Switch

HITFET BTS 117TC

Block Diagramm

Terms Inductive and overvoltage output clamp

R

L

I

IN

V

IN

1

HITFET

D

S

Input circuit (ESD protection)

IN

ESD-ZD

I

Source

ESD zener diodes are not designed for DC current > 2 mA @ V

IN

>10V.

V

Z

2

I

D

3

V

bb

DS

D

S

HITFET

Short circuit behaviour

V

IN

I

D(SCp)

I

D

D(Li m)

t 0 tm

t 1

t0: Turn on into a short circuit

tm: Measurementpoint for I

D(lim)

t1: Activation of the fast temperature sensor and

regulation of the drain current to a level where the junction temperature remains constant. t2: Thermal shutdown caused by the second

temperature sensor, achieved by an integrating measurement.

t 2

Datasheet 5 Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Maximum allowable power dissipation

= f(Tc)

P

tot

BTS 117

55

W

45

40

tot

35

P

30

25

20

15

10

5

0

0 20 40 60 80 100 120

On-state resistance

R

= f(Tj); ID= 3.5A; VIN=5V

ON

On-state resistance

= f(Tj); ID=3.5A; VIN=10V

R

ON

200

Ω

150

DS(on)

125

R

100

75

50

25

0

°C

160

150

-50 -25 0 25 50 75 100

max.

typ.

°C

150

T

j

Typ. input threshold voltage

V

= f(Tj); ID=0.7mA; VDS=12V

IN(th)

250

Ω

200

175

DS(on)

R

150

125

100

75

50

25

0

-50 -25 0 25 50 75 100

max.

typ.

2.0

V

1.6

1.4

IN(th)

V

1.2

1.0

0.8

0.6

0.4

0.2

°C

150

T

j

0.0

-50 -25 0 25 50 75 100

°C

150

T

j

Datasheet 6 Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

Typ. transfer characteristics

= f(VIN); VDS=12V; Tj=25°C

I

D

10

A

D

I

6

4

2

0

0 1 2 3 4 5 6

Transient thermal impedance

Typ. output characteristic

= f(VDS); Tj=25°C

I

D

Parameter: V

10

A

D

I

6

4

2

0

0 1 2 3 4

V

8

V

IN

10V

6V

5V

4V

Vin=3V

V

6

DS

Z

= f (tp)

thJC

parameter : D = t

1

10

K/W

D=0.5

0

10

thJC

R

10

0.2

0.1

0.05

-1

0.02

0.01

0.005

0

-2

10-710-610-510-410-310-210-110

/T

p

0

t

2

s

10

P

Datasheet 7 Rev. 1.0, 2009-07-20

Application examples:

Status signal of thermal shutdown by

monitoring input current

R

St

μC

V

IN

V

IN

HITFET

D

S

thermal shutdown

Smart Low Side Power Switch

HITFET BTS 117TC

V

bb

V

Δ

ΔV = RST *I

IN(3)

Datasheet 8 Rev. 1.0, 2009-07-20

Smart Low Side Power Switch

HITFET BTS 117TC

1 Package Outlines

±0.2

10

0...0.3

1)

8.5

1

±0.2

(15)

9.25 ±0.3

A

1)

7.55

±0.3

1.3

1.27

B

0.05

±0.5

4.7

Package Outlines

4.4

±0.1

2.4

0.1

±0.3

2.7

0...0.15

1.05

0.75

2.54

±0.1

8˚

MAX.

0.5

±0.1

5.08

1)

Typical

M

BA0.25

0.1 B

Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut.

Figure 1 PG-TO263-3-2 (Plastic Dual Small Outline Package) (RoHS-Compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Please specify the package needed (e.g. green package) when placing an order

GPT09085

You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products.

Datasheet 9 Rev. 1.0, 2009-07-20

Dimensions in mm

Smart Low Side Power Switch

HITFET BTS 117TC

2 Revision History

Version Date Changes

Rev. 1.0 2009-07-20 intial released Datasheet

Revision History

Datasheet 10 Rev. 1.0, 2009-07-20

Edition 2009-07-20

Published by Infineon Technologies AG 81726 Munich, Germany

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