Page 1
BTA412Y-600B
3Q Triac
Rev.03 - 15 April 2019 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a IITO-220 internally insulated plastic
package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series B" triac will commutate the full RMS current at the maximum rated junction temperature
without the aid of a snubber. This device has high Tj operating capability and an internally isolated
mounting base.
2. Features and benets
• 3Q technology for improved noise immunity
• High commutation capability with maximum false trigger immunity
• High junction operating temperature capability (T
• High surge capability
• Isolated mounting base with 2500 V (RMS) isolation
• Least sensitive gate for highest noise immunity
• Planar passivated for voltage ruggedness and reliability
• Triggering in three quadrants only
• Very high immunity to false turn-on by dV/dt
= 150 °C)
j(max)
3. Applications
• Electronic thermostats (heating and cooling)
• High power motor controls
• Rectier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Values Unit
Absolute maximum rating
V
DRM
I
T(RMS)
I
TSM
T
j
repetitive peak o-state
voltage
RMS on-state current square-wave pulse; T
Fig. 1; Fig. 2; Fig. 3
non-repetitive peak
forward current
junction temperature 150 °C
full sine wave; tp = 20 ms; T
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; T
≤ 116 °C;
mb
= 25 °C;
j(init)
= 25 °C 153 A
j(init)
600 V
12 A
140 A
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WeEn Semiconductors
IITO-220
sym051
T1
T2
BTA412Y-600B
3Q Triac
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
I
H
V
T
Dynamic characteristics
/dt rate of rise of o-state
dVD
dIcom
gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+
2 - 50 mA
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-
2 - 50 mA
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-
2 - 50 mA
Tj = 25 °C; Fig. 7
holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 60 mA
on-state voltage IT = 18 A; Tj = 25 °C; Fig. 10 - 1.3 1.5 V
voltage
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of V
); exponential waveform;
DRM
1000 - - V/μs
gate open circuit
VDM = 402 V; Tj = 150 °C; (VDM = 67%
of V
); exponential waveform;
DRM
600 - - V/μs
gate open circuit
/dt rate of change of
commutating current
VD = 400 V; Tj = 125 °C; I
dV
/dt = 20 V/μs; gate open circuit;
com
T(RMS)
= 12 A;
20 - - A/ms
snubberless condition
VD = 400 V; Tj = 150 °C; I
dV
/dt = 20 V/μs; gate open circuit;
com
T(RMS)
= 12 A;
8 - - A/ms
snubberless condition
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplied outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
G
3 G gate
mb n.c mounting base; isolated
123
6. Ordering information
Table 3. Ordering information
Type number Package
name
Orderable part number Packing
method
Small packing
quantity
Package
version
Package
issue date
BTA412Y-600B IITO220 BTA412Y-600BQ Tube 50 IITO220E 15-Dec-2017
7. Marking
Table 4. Marking codes
Type number Marking codes
BTA412Y-600B BTA412Y-600B
BTA412Y-600B
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003aab813
003aab814
BTA412Y-600B
3Q Triac
8. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Values Unit
V
DRM
I
T(RMS)
I
TSM
I2t I2t for fusing tp = 10ms; sine wave 98 A2/s
/dt rate of rise of on-state
dIT
IGM
PGM
PG(AV)
Tstg
Tj
repetitive peak o-state
600 V
voltage
RMS on-state current full sine wave; T
≤ 116°C; Fig. 1;
mb
12 A
Fig. 2; Fig. 3
non-repetitive peak onstate current
full sine wave; tp = 20 ms; T
Fig. 4; Fig. 5
full sine wave; tp = 16.7 ms; T
= 25 °C;
j(init)
= 25 °C 153 A
j(init)
140 A
IG = 100mA 100 A/μs
current
peak gate current 2 A
peak gate power 5 W
average gate power over any 20 ms period 0.5 W
storage temperature -40 to 150 °C
junction temperature 150 °C
40
I
T(RMS)
(A)
30
Fig. 1. RMS on-state current as a function of mounting
20
10
0
-2
10
-1
10
1 10
surge duration (s)
base temperature; maximum values
15
I
T(RMS)
(A)
10
5
0
-50 0 50 100 150
116°C
T
mb
( ° C)
f = 50Hz; Tmb = 116 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
BTA412Y-600B
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003aab810
003aab811
003aab812
16
conduction
P
tot
angle
(degrees)
(W)
12
120
180
8
4
0
0 3 6 9 12
α = conduction angle
a = form factor = I
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
160
I
TSM
(A)
120
form
factor
30
60
90
α
2.816
1.976
1.570
1.329
1.110
T(RMS)
α
/ I
T(AV)
BTA412Y-600B
3Q Triac
α = 180 °
120 °
90 °
60 °
30 °
(A)
I
T(RMS)
80
I
TSM
t
40
I
T
1/f
T
= 25 °C max
0
1 10 10
2
j(init)
number of cycles (n)
10
3
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
3
10
I
TSM
(A)
(1)
2
10
I
T
I
TSM
t
t
p
T
= 25 °C max
j(init)
10
-5
10
tp ≤ 20 ms ;
-4
10
-3
10
-2
10
tp (s)
-1
10
(1) dIT/dt limit
Fig. 5. Total power dissipation as a function of RMS on-state current; maximum values
BTA412Y-600B
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003aab81 5
11
BTA412Y-600B
3Q Triac
9. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
R
th(j-a)
Z
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient free air
10
th(j-mb)
(K/W)
1
-1
10
full cycle; Fig. 6 - - 2.1 K/W
in free air - 60 - K/W
P
-2
10
-3
10
-5
10
-4
10
-3
10
-2
10
-1
t
t
p
tp (s)
010
Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
C
isol(RMS)
isol
RMS isolation voltage 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; from all
- - 2500 V
pins to external heatsink; sinusoidal
waveform; clean and dust free
isolation capacitance from cathode to external heatsink - 10 - PF
BTA412Y-600B
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BTA412Y-600B
3Q Triac
11. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
IL
I
H
V
VGT
ID
T
gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+;
2 - 50 mA
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
2 - 50 mA
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
2 - 50 mA
Tj = 25 °C; Fig. 7
latching current VD = 12 V; IT = 0.1 A; T2+ G+;
- - 60 mA
Tj = 25 °C; Fig. 8
VD = 12 V; IT = 0.1 A; T2+ G-;
- - 90 mA
Tj = 25 °C; Fig. 8
VD = 12 V; IT = 0.1 A; T2- G-;
- - 60 mA
Tj = 25 °C; Fig. 8
holding current VD = 12 V; Tj = 25 °C; Fig. 9 - - 60 mA
on-state voltage IT = 18 A; Tj = 25 °C; Fig. 10 - 1.3 1.5 V
gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 °C;
- 0.8 1 V
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 150 °C;
0.25 0.4 - V
Fig. 11
o-state current VD = 800 V; Tj = 125 °C - 0.1 0.5 μA
VD = 800 V; Tj = 150 °C - 0.4 2 mA
Dynamic characteristics
/dt rate of rise of o-state
dVD
voltage
/dt rate of change of
dIcom
commutating current
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of V
); exponential waveform;
DRM
gate open circuit
VDM = 402 V; Tj = 150 °C; (VDM = 67%
of V
); exponential waveform;
DRM
gate open circuit
VD = 400 V; Tj = 125 °C; I
dV
/dt = 20 V/μs; gate open circuit;
com
T(RMS)
= 8 A;
snubberless condition
VD = 400 V; Tj = 150 °C; I
dV
/dt = 20 V/μs; gate open circuit;
com
T(RMS)
= 8 A;
snubberless condition
1000 - - V/μs
600 - - V/μs
20 - - A/ms
8 - - A/ms
BTA412Y-600B
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01
01
001aag166
01
001aag167
003aab666
BTA412Y-600B
3Q Triac
001aag165
Tj (°C)
50100050
I
GT
I
GT(25°C)
3
(1)
(2)
2
(3)
1
0
-5
(1) T2- G (2) T2+ G (3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
3
I
H
I
H(25°C)
3
I
L
I
L(25°C)
2
1
0
-5
Tj (°C)
50100050
Fig. 8. Normalized latching current as a function of
junction temperature
50
I
T
(A)
40
2
1
0
-5
Tj (°C)
50100050
Fig. 9. Normalized holding current as a function of
junction temperature
30
20
(1) (2 ) (3)
10
0
00.5 11.5 2
Vo = 1.024 V; Rs = 0.021 Ω
V
(V)
T
(1) Tj = 150 °C; typical values
(2) Tj = 150 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state voltage
BTA412Y-600B
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01
001aag168
V
GT
V
GT(25°C)
BTA412Y-600B
3Q Triac
1.6
1.2
0.8
0.4
-5
Tj (°C)
50100500
Fig. 11. Normalized gate trigger voltage as a function of junction temperature
BTA412Y-600B
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IITO220
12. Package outline
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 leads TO-220
A
E
A1
BTA412Y-600B
3Q Triac
q
ØP
D2
D
D1
(
L1
Q
b1
L
c
b
BTA412Y-600B
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13. Legal information
Data sheet status
Document
status [1]
Objective
[short] data
sheet
Preliminary
[short] data
sheet
Product
[short] data
sheet
[1 lease consult the most recently issued document before initiating or
]
P
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.ween-semi.com
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. WeEn Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local WeEn
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
WeEn Semiconductors and its customer, unless WeEn Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the WeEn Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, WeEn Semiconductors does not
give any representations or warranties, expressed or implied, as to the
accuracy or completeness of such information and shall have no liability for
the consequences of use of such information. WeEn Semiconductors takes
no responsibility for the content in this document if provided by an information
source outside of WeEn Semiconductors.
In no event shall WeEn Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
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Notwithstanding any damages that customer might incur for any reason
whatsoever, WeEn Semiconductors’ aggregate and cumulative liability
towards customer for the products described herein shall be limited in
accordance with the Terms and conditions of commercial sale of WeEn
Semiconductors.
Product
[2]
status [3]
Development This document contains data from
Qualification This document contains data from the
Production This document contains the product
Definition
the objective specification for product
development.
preliminary specification.
specification.
.
BTA412Y-600B
3Q Triac
Right to make changes — WeEn Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — WeEn Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical
or safety-critical systems or equipment, nor in applications where failure
or malfunction of an WeEn Semiconductors product can reasonably
be expected to result in personal injury, death or severe property or
environmental damage. WeEn Semiconductors and its suppliers accept no
liability for inclusion and/or use of WeEn Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. WeEn Semiconductors makes
no representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using WeEn Semiconductors products, and WeEn
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the WeEn Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
WeEn Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using WeEn
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). WeEn does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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Non-automotive qualified products — Unless this data sheet expressly
states that this specific WeEn Semiconductors product is automotive
qualified, the product is not suitable for automotive use. It is neither qualified
nor tested in accordance with automotive testing or application requirements.
WeEn Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without WeEn Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
WeEn Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies WeEn Semiconductors for
any liability, damages or failed product claims resulting from customer
design and use of the product for automotive applications beyond WeEn
Semiconductors’ standard warranty and WeEn Semiconductors’ product
specifications.
BTA412Y-600B
Product data sheet
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Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
BTA412Y-600B
3Q Triac
BTA412Y-600B
Product data sheet
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14. Contents
1. General description ....................................................... 1
2. Features and benets ...................................................1
3. Applications ................................................................... 1
4. Quick reference data ..................................................... 1
5. Pinning information .......................................................2
6. Ordering information .....................................................2
7. Marking ........................................................................... 2
8. Limiting values ..............................................................3
9. Thermal characteristics ................................................ 5
10. Isolation characteristics .............................................5
11. Characteristics .............................................................6
12. Package outline ...........................................................9
13. Legal information ......................................................10
14. Contents ..................................................................... 12
BTA412Y-600B
3Q Triac
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For more information, please visit: http://www.ween-semi.com
For sales oce addresses, please send an email to: salesaddresses@ween-semi.com
Date of release: 15 April 2019
BTA412Y-600B
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