Page 1
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intendedforuse in circuitswherehigh BTA216X- 500B 600B 800B
static and dynamic dV/dt and high V
DRM
dI/dt can occur. These devices will voltages
commutate the full rated rms current I
at the maximum rated junction I
T(RMS)
TSM
temperature, without the aid of a current
snubber.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 16 16 16 A
Non-repetitive peak on-state 140 140 140 A
PIN DESCRIPTION
case
1 main terminal 1
2 main terminal 2
3 gate
case isolated
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 500
voltages
RMS on-state current full sine wave; - 16 A
Ths ≤ 38 ˚C
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
1
surge
t = 20 ms - 140 A
I2tI
2
t for fusing t = 10 ms - 98 A2s
t = 16.7 ms - 150 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
600
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.200
Page 2
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ 2 18 50 mA
T2+ G- 2 21 50 mA
T2- G- 2 34 50 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 31 60 mA
T2+ G- - 34 90 mA
T2- G- - 30 60 mA
I
H
V
T
V
GT
I
D
Holding current VD = 12 V; IGT = 0.1 A - 31 60 mA
On-state voltage IT = 20 A - 1.2 1.5 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
com
t
gt
commutating current without snubber; gate open circuit
Gate controlled turn-on ITM = 20 A; VD = V
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; 1000 4000 - V/µs
DRM(max)
= 16 A; - 28 - A/ms
T(RMS)
; IG = 0.1 A; - 2 - µs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
October 1997 2 Rev 1.200
Page 3
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
Ptot / W
25
20
15
10
5
0
0 5 10 15 20
BT139
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
dI /dt limit
T
100
10
10us 100us 1ms 10ms 100ms
, where α = conduction angle.
T(RMS)
BTA216
I
T
T / s
Ths(max) / C
= 180
120
90
60
30
, versus rms
tot
I
TSM
time
T
Tj initial = 25 C max
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
, versus pulse width tp, for
TSM
25
45
65
85
105
125
IT(RMS) / A
20
15
10
5
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus heatsink temperature Ths.
IT(RMS) / A
50
40
30
20
10
0
0.01 0.1 1 10
BT139X
38 C
Ths / C
BT139
surge duration / s
T(RMS)
,
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Ths ≤ 38˚C.
ITSM / A
150
100
50
0
1 10 100 1000
BT139
I
T
Tj initial = 25 C max
Number of cycles at 50Hz
I
TSM
time
T
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
BT136
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
October 1997 3 Rev 1.200
Page 4
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BTA216
T2+ G+
T2+ GT2- G-
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
IL(Tj)
2.5
1.5
0.5
IL(25 C)
3
2
1
TRIAC
IT / A
50
Tj = 125 C
Tj = 25 C
40
Vo = 1.195 V
Rs = 0.018 Ohms
30
20
10
0
0 0.5 1 1.5 2 2.5 3
BT139
typ
VT / V
max
Fig.10. Typical and maximum on-state characteristic.
.
j
Zth j-hs (K/W)
10
with heatsink compound
without heatsink compound
1
0.1
0.01
BT139
unidirectional
bidirectional
t
P
D
p
t
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
TRIAC
Tj / C
.
j
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
.
j
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
dIcom/dt (A/ms)
1000
100
10
1
20 40 60 80 100 120 140
tp / s
pulse width tp.
BTA216
Tj / C
th j-mb
, versus
Fig.12. Typical, critical rate of change of commutating
current dI
/dt versus junction temperature.
com
October 1997 4 Rev 1.200
Page 5
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5
min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8
max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8
max
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997 5 Rev 1.200
Page 6
Philips Semiconductors Product specification
Three quadrant triacs BTA216X series B
high commutation
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997 6 Rev 1.200
Loading...