Page 1
Philips Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting, intended for use in BTA216B- 600D -
motor control circuits or with other highly BTA216B- 600E 800E
inductive loads. These devices balance V
DRM
BTA216B- 600F 800F V
the requirements of commutation Repetitive peak off-state 600 800
performance and gate sensitivity. The I
T(RMS)
voltages A
"sensitive gate" E series and "logic level" I
TSM
RMS on-state current 16 16 A
D series are intended for interfacing with Non-repetitive peak on-state 140 140
low power drivers, including micro current
controllers.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
Repetitive peak off-state - 600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 16 A
Tmb ≤ 99 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge t = 20 ms - 140 A
t = 16.7 ms 150 A
I2tI
2
t for fusing t = 10 ms - 98 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
13
mb
2
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000 1 Rev 1.000
Page 2
Philips Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
R
th j-a
Thermal resistance minimum footprint, FR4 board - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA216- ...D ...D ...E ...F
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - 1.3 5 10 25 mA
T2+ G- - 2.6 5 10 25 mA
T2- G- - 3.4 5 10 25 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A mA
T2+ G+ - 10.2 15 25 30 mA
T2+ G- - 11.3 25 30 40 mA
T2- G- - 19.3 25 30 40
I
H
Holding current VD = 12 V; IGT = 0.1 A - 8 15 25 30 mA
...D, E, F
V
T
On-state voltage IT = 20 A - 1.2 1.5 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
I
D
Off-state leakage current VD = V
DRM(max)
; - 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA216- ...D ...E ...F ...D
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; 30607065 -V/µs
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dI
com
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 2.5 4.7 9.5 7.5 - A/ms
commutating current I
T(RMS)
= 16 A;
dV
com
/dt = 20V/µs; gate
open circuit
dI
com
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 12 40 50 100 -
commutating current I
T(RMS)
= 16 A; A/ms
dV
com
/dt = 0.1V/µs; gate
open circuit
...D, E, F
t
gt
Gate controlled turn-on ITM = 20 A; VD = V
DRM(max)
;- - - 2 - µs
time IG = 0.1 A; dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
February 2000 2 Rev 1.000
Page 3
Philips Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature Tmb.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; Tmb ≤ 99˚C.
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
0 5 10 15 20
0
5
10
15
20
25
= 180
120
90
60
30
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
119
113
107
101
95
1
-50 0 50 100 150
0
5
10
15
20
BT139
99 C
Tmb / C
IT(RMS) / A
10us 100us 1ms 10ms 100ms
10
100
1000
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
0.01 0.1 1 10
0
10
20
30
40
50
surge duration / s
IT(RMS) / A
1 10 100 1000
0
50
100
150
Number of cycles at 50Hz
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
Tj / C
VGT(Tj)
VGT(25 C)
February 2000 3 Rev 1.000
Page 4
Philips Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width tp.
Fig.12. Mimimum, critical rate of change of
commutating current dI
com
/dt versus junction
temperature, dV
com
/dt = 20V/µs.
0
0.5
1
1.5
2
2.5
3
-50 0 50 100 150
T2+ G+
T2+ GT2- G-
Tj/°C
IGT(Tj)
IGT(25°C)
0 0.5 1 1.5 2 2.5 3
0
10
20
30
40
50
BT139
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ
max
Vo = 1.195 V
Rs = 0.018 Ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IL(Tj)
IL(25 C)
0.001
0.01
0.1
1
10
tp / s
Zth j-mb (K/W)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
t
p
P
t
D
unidirectional
bidirectional
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
Tj / C
IH(Tj)
IH(25C)
1
10
100
20 40 60 80 100 120 140
F TYPE
E TYPE
D TYPE
Tj/˚C
dIcom/dt (A/ms)
February 2000 4 Rev 1.000
Page 5
Philips Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
Fig.13. SOT404 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.14. SOT404 : minimum pad sizes for surface mounting.
Notes
1. Plastic meets UL94 V0 at 1/8".
11 max
4.5 max
1.4 max
10.3 max
0.5
15.4
2.5
0.85 max
(x2)
2.54 (x2)
17.5
11.5
9.0
5.08
3.8
2.0
February 2000 5 Rev 1.000
Page 6
Philips Semiconductors Product specification
Three quadrant triacs BTA216B series D, E and F
guaranteed commutation
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 2000 6 Rev 1.000
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