Datasheet BTA216-800B Datasheet (Philips)

Philips Semiconductors Product specification

Three quadrant triacs BTA216 series B
high commutation

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope intended
foruseincircuitswherehighstaticand BTA216- 500B 600B 800B
dynamic dV/dt and high dI/dt can V

DRM

occur. These devices will commutate voltages
the full rated rms current at the I
maximumrated junctiontemperature, I

T(RMS)
TSM

without the aid of a snubber. current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Repetitive peak off-state 500 600 800 V
RMS on-state current 16 16 16 A

Non-repetitive peak on-state 140 140 140 A

PIN DESCRIPTION

tab

1 main terminal 1
2 main terminal 2
3 gate

tab main terminal 2

123

G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -600 -800

V

DRM

I

T(RMS)

I

TSM

Repetitive peak off-state - 500
voltages

RMS on-state current full sine wave; - 16 A

Tmb ≤ 99 ˚C
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to

1

surge

t = 20 ms - 140 A

I2tI

2

t for fusing t = 10 ms - 98 A2s

t = 16.7 ms - 150 A

dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs

on-state current after dIG/dt = 0.2 A/µs
triggering

I
V
P
P

T
T

GM

GM
GM
G(AV)

stg
j

Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W

period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature

600

1

800 V

T1T2

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

October 1997 1 Rev 1.200

Philips Semiconductors Product specification

Three quadrant triacs BTA216 series B
high commutation

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-mb

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

I

L

I

H

V

T

V

GT

I

D

Thermal resistance full cycle - - 1.2 K/W
junction to mounting base half cycle - - 1.7 K/W
Thermal resistance in free air - 60 - K/W
junction to ambient

Gate trigger current

2

VD = 12 V; IT = 0.1 A

T2+ G+ 2 18 50 mA
T2+ G- 2 21 50 mA
T2- G- 2 34 50 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 31 60 mA
T2+ G- - 34 90 mA

T2- G- - 30 60 mA
Holding current VD = 12 V; IGT = 0.1 A - 31 60 mA
On-state voltage IT = 20 A - 1.2 1.5 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V

Off-state leakage current VD = V

; Tj = 125 ˚C - 0.1 0.5 mA

DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of rise of VDM = 67% V

off-state voltage exponential waveform; gate open circuit

dI

/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I

com

t

gt

commutating current without snubber; gate open circuit
Gate controlled turn-on ITM = 20 A; VD = V
time dIG/dt = 5 A/µs

; Tj = 125 ˚C; 1000 4000 - V/µs

DRM(max)

= 16 A; - 28 - A/ms

T(RMS)

; IG = 0.1 A; - 2 - µs

DRM(max)

2 Device does not trigger in the T2-, G+ quadrant.

October 1997 2 Rev 1.200

Philips Semiconductors Product specification

Three quadrant triacs BTA216 series B
high commutation

Ptot / W

25

20

15

10

5

0

0 5 10 15 20

BT139

1

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P

on-state current, I

ITSM / A

1000

dI /dt limit

T

100

10

10us 100us 1ms 10ms 100ms

, where α = conduction angle.

T(RMS)

BTA216

I

T

T / s

Tmb(max) / C

= 180

120
90

60
30

, versus rms

tot

I

TSM

time

T

Tj initial = 25 C max

Fig.2. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, tp ≤ 20ms.

, versus pulse width tp, for

TSM

95

101

107

113

119

125

IT(RMS) / A

20

15

10

5

0

-50 0 50 100 150

Fig.4. Maximum permissible rms current I

versus mounting base temperature Tmb.

IT(RMS) / A

50

40

30

20

10

0

0.01 0.1 1 10

BT139

Tmb / C

BT139

surge duration / s

99 C

T(RMS)

,

Fig.5. Maximum permissible repetitive rms on-state

current I

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Tmb ≤ 99˚C.

ITSM / A

150

100

50

0

1 10 100 1000

BT139

I

T

Tj initial = 25 C max

Number of cycles at 50Hz

I

TSM

time

T

Fig.3. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

, versus number of cycles, for

TSM

VGT(Tj)

VGT(25 C)

1.6

1.4

1.2

1

0.8

0.6

0.4

-50 0 50 100 150

BT136

Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

October 1997 3 Rev 1.200

Philips Semiconductors Product specification

Three quadrant triacs BTA216 series B
high commutation

IGT(Tj)

IGT(25 C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150

BTA216

T2+ G+
T2+ G­T2- G-

Tj / C

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature T

IL(Tj)

2.5

1.5

0.5

IL(25 C)

3

2

1

TRIAC

IT / A

50

Tj = 125 C

Tj = 25 C

40

Vo = 1.195 V
Rs = 0.018 Ohms

30

20

10

0

0 0.5 1 1.5 2 2.5 3

BT139

typ

VT / V

max

Fig.10. Typical and maximum on-state characteristic.

.

j

Zth j-mb (K/W)

10

1

0.1

0.01

BT139

unidirectional

bidirectional

t

P

p

D

t

0

-50 0 50 100 150
Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature T

IH(Tj)

IH(25C)

3

2.5

2

1.5

1

0.5

0

-50 0 50 100 150

TRIAC

Tj / C

.

j

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature T

.

j

0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s

Fig.11. Transient thermal impedance Z

dIcom/dt (A/ms)

1000

100

10

1

20 40 60 80 100 120 140

tp / s

pulse width tp.

BTA216

Tj / C

th j-mb

, versus

Fig.12. Typical, critical rate of change of commutating

current dI

/dt versus junction temperature.

com

October 1997 4 Rev 1.200

Philips Semiconductors Product specification

Three quadrant triacs BTA216 series B
high commutation

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

10,3
max

1,3

3,7

4,5
max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for TO220 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

October 1997 5 Rev 1.200

Philips Semiconductors Product specification

Three quadrant triacs BTA216 series B
high commutation

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1997 6 Rev 1.200