Datasheet BTA216-600F.127 Specification

Page 1

IMPORTANT NOTICE

10 December 2015

1. Global joint venture starts operations as WeEn Semiconductors

Dear customer,

As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details.

In this document where the previous NXP references remain, please use the new links as shown below.

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For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved”

If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com).

Thank you for your cooperation and understanding,

WeEn Semiconductors

Page 2

DATA SH EET

DISCRETE SEMICONDUCTORS

BTA216 series D, E and F

Three quadrant triacs guaranteed commutation

Product specification April 2002

Page 3

NXP Semiconductors Product specification

Three quadrant triacs BTA216 series D, E and F guaranteed commutation

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated guaranteed commutation triacs in SYMBOL PARAMETER MAX. UNIT a plastic envelope intended for use in motor control circuits or with other highly inductive BTA216- 600D loads. These devices balance the BTA216- 600E requirements of commutation performance BTA216- 600F and gate sensitivity. The "sensitive gate" E V series and "logic level" D series are intended voltages for interfacing with low power drivers, I including micro controllers. I

DRM

T(RMS)

TSM

PINNING - TO220AB PIN CONFIGURATION SYMBOL

Repetitive peak off-state 600 V

RMS on-state current 16 A Non-repetitive peak on-state 140 A

current

PIN DESCRIPTION

tab

1 main terminal 1

2 main terminal 2

3 gate

tab main terminal 2

123

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

DRM

T(RMS)

Repetitive peak off-state - 600 voltages

RMS on-state current full sine wave; - 16 A

Tmb ≤ 99 ˚C

TSM

Non-repetitive peak full sine wave; on-state current Tj = 25 ˚C prior to

surge t = 20 ms - 140 A

I2tI

t for fusing t = 10 ms - 98 A2s

t = 16.7 ms - 150 A

dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; - 100 A/µs

on-state current after dIG/dt = 0.2 A/µs

triggering I P P

T T

G(AV)

stg

Peak gate current - 2 A

Peak gate power - 5 W

Average gate power over any 20 ms - 0.5 W

period Storage temperature -40 150 ˚C Operating junction - 125 ˚C temperature

T1T2

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

April 2002 1 Rev 2.000

Page 4

NXP Semiconductors Product specification

Three quadrant triacs BTA216 series D, E and F guaranteed commutation

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

th j-mb

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Thermal resistance full cycle - - 1.2 K/W junction to mounting base half cycle - - 1.7 K/W Thermal resistance in free air - 60 - K/W junction to ambient

BTA216- ...D ...E ...F

Gate trigger current

VD = 12 V; IT = 0.1 A

T2+ G+ - 5 10 25 mA T2+ G- - 5 10 25 mA T2- G- - 5 10 25 mA

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - 15 25 30 mA T2+ G- - 25 30 40 mA T2- G- - 25 30 40 mA

Holding current VD = 12 V; IGT = 0.1 A - 15 25 30 mA

...D, E, F

On-state voltage IT = 20 A - 1.5 V Gate trigger voltage VD = 12 V; IT = 0.1 A - 1.5 V

VD = 400 V; IT = 0.1 A; 0.25 - V Tj = 125 ˚C

Off-state leakage current VD = V

; Tj = 125 ˚C - 0.5 mA

DRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

BTA216- ...D ...E ...F

dVD/dt Critical rate of rise of VDM = 67% V

off-state voltage Tj = 110 ˚C; exponential

waveform; gate open circuit

/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 2.5 6.2 18 - A/ms

com

commutating current I

= 16 A;

T(RMS)

/dt = 10V/µs; gate

com

open circuit

/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 12 20 50 - A/ms

com

commutating current I

= 16 A;

T(RMS)

/dt = 0.1V/µs; gate

com

open circuit

;306070-V/µs

DRM(max)

2 Device does not trigger in the T2-, G+ quadrant.

April 2002 2 Rev 2.000

Page 5

NXP Semiconductors Product specification

Three quadrant triacs BTA216 series D, E and F guaranteed commutation

Ptot / W

0 5 10 15 20

IT(RMS) / A

Fig.1. Maximum on-state dissipation, P

on-state current, I

ITSM / A

1000

dI /dt limit

100

10us 100us 1ms 10ms 100ms

, where α = conduction angle.

T(RMS)

T / s

Tmb(max) / C

= 180

120

, versus rms

tot

TSM

time

Tj initial = 25 C max

Fig.2. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, tp ≤ 20ms.

, versus pulse width tp, for

TSM

101

107

113

119

125

IT(RMS) / A

-50 0 50 100 150

Fig.4. Maximum permissible rms current I

versus mounting base temperature Tmb.

IT(RMS) / A

0.01 0.1 1 10

BT139

Tmb / C

surge duration / s

99 C

T(RMS)

Fig.5. Maximum permissible repetitive rms on-state

current I

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Tmb ≤ 99˚C.

ITSM / A

150

100

1 10 100 1000

Number of cycles at 50Hz

Tj initial = 25 C max

TSM

time

Fig.3. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

, versus number of cycles, for

TSM

VGT(Tj)

VGT(25 C)

1.6

1.4

1.2

0.8

0.6

0.4

-50 0 50 100 150 Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

April 2002 3 Rev 2.000

Page 6

NXP Semiconductors Product specification

Three quadrant triacs BTA216 series D, E and F guaranteed commutation

IGT(Tj)

IGT(25°C)

2.5

1.5

0.5

-50 0 50 100 150

Tj/°C

T2+ G+ T2+ GT2- G-

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj)

IL(25 C)

2.5

1.5

0.5

IT / A

Tj = 125 C

Tj = 25 C

Vo = 1.195 V Rs = 0.018 Ohms

0 0.5 1 1.5 2 2.5 3

BT139

typ

VT / V

max

Fig.10. Typical and maximum on-state characteristic.

Zth j-mb (K/W)

0.1

0.01

unidirectional

bidirectional

-50 0 50 100 150 Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature Tj.

IH(Tj)

IH(25C)

2.5

1.5

0.5

-50 0 50 100 150 Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature Tj.

0.001 10us 0.1ms 1ms 10ms 0.1s 1s 10s

tp / s

Fig.11. Transient thermal impedance Z

pulse width tp.

dIcom/dt (A/ms)

100

20 40 60 80 100 120 140

Tj/˚C

Fig.12. Minimum, critical rate of change of

commutating current dI

temperature, dV

/dt versus junction

com

/dt = 10V/µs.

com

th j-mb

F TYPE

E TYPE

D TYPE

, versus

April 2002 4 Rev 2.000

Page 7

NXP Semiconductors Product specification

Three quadrant triacs BTA216 series D, E and F guaranteed commutation

MECHANICAL DATA

Dimensions in mm

Net Mass: 2 g

10,3 max

1,3

3,7

4,5 max

3,0 max

not tinned

1,3

max

(2x)

123

2,54 2,54

2,8

3,0

13,5

min

0,9 max (3x)

5,9

min

15,8

max

0,6

2,4

Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT78 (TO220) envelopes.

2. Epoxy meets UL94 V0 at 1/8".

April 2002 5 Rev 2.000

Page 8

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