Page 1
DATA SH EET
DISCRETE SEMICONDUCTORS
BTA212X series D, E and F
Three quadrant triacs
guaranteed commutation
Product specification June 2003
Page 2
NXP Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended for use in motor control circuits BTA212X- 600D -
or with other highly inductive loads. BTA212X- 600E 800E
These devices balance the BTA212X- 600F -
requirements of commutation V
performance and gate sensitivity. The voltages
"sensitive gate" E series and "logiclevel" I
D series are intended for interfacing with I
low power drivers, including micro current
DRM
T(RMS)
TSM
controllers.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Repetitive peak off-state 600 800 V
RMS on-state current 12 12 A
Non-repetitive peak on-state 95 95 A
PIN DESCRIPTION
case
1 main terminal 1
2 main terminal 2
3 gate
case isolated
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 600
voltages
RMS on-state current full sine wave; - 12 A
Ths ≤ 56 ˚C
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 95 A
I2tI
2
t for fusing t = 10 ms - 45 A2s
t = 16.7 ms - 105 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
GM
P
P
GM
G(AV)
Peak gate current - 2 A
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
T
stg
T
j
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
June 2003 1 Rev 3.000
Page 3
NXP Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA212X- ...D ...E ...F
I
GT
I
L
I
H
V
T
V
GT
I
D
Gate trigger current
Latching current VD = 12 V; IGT = 0.1 A
Holding current VD = 12 V; IGT = 0.1 A - 15 25 30 mA
On-state voltage IT = 17 A - 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 1.5 V
Off-state leakage current VD = V
2
VD = 12 V; IT = 0.1 A
T2+ G+ - 5 10 25 mA
T2+ G- - 5 10 25 mA
T2- G- - 5 10 25 mA
T2+ G+ - 15 25 30 mA
T2+ G- - 25 30 40 mA
T2- G- - 25 30 40 mA
VD = 400 V; IT = 0.1 A; 0.25 - V
Tj = 125 ˚C
; Tj = 125 ˚C - 0.5 mA
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
June 2003 2 Rev 3.000
Page 4
NXP Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
BTA212X- ...D ...E ...F
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 1.0 8.0 21 - A/ms
com
dI
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 3.5 16 32 - A/ms
com
commutating current I
commutating current I
= 12 A;
T(RMS)
dV
/dt = 10 V/µs; gate
com
open circuit
= 12 A;
T(RMS)
dV
/dt = 0.1 V/µs; gate
com
open circuit
;306070-V/µs
DRM(max)
June 2003 3 Rev 3.000
Page 5
NXP Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
Ptot / W
20
15
10
5
0
0 5 10 15
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
dI /dt limit
T
100
10
10us 100us 1ms 10ms 100ms
, where α = conduction angle.
T(RMS)
I
T
T / s
Ths(max) / C
= 180
120
90
60
30
, versus rms
tot
I
TSM
time
T
Tj initial = 25 C max
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
, versus pulse width tp, for
TSM
45
65
85
105
125
IT(RMS) / A
15
10
5
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus heatsink temperature Ths.
IT(RMS) / A
25
20
15
10
5
0
0.01 0.1 1 10
BT138X
56 C
Ths / C
surge duration / s
T(RMS)
,
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Ths ≤ 56˚C.
ITSM / A
100
I
I
80
60
40
20
0
1 10 100 1000
Number of cycles at 50Hz
T
Tj initial = 25 C max
TSM
T
time
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
June 2003 4 Rev 3.000
Page 6
NXP Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
IGT(Tj)
IGT(25°C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj/°C
T2+ G+
T2+ GT2- G-
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
2.5
2
1.5
IT / A
40
Tj = 125 C
Tj = 25 C
30
Vo = 1.175 V
Rs = 0.0316 Ohms
20
10
0
0 0.5 1 1.5 2 2.5 3
typ
max
VT / V
Fig.10. Typical and maximum on-state characteristic.
Zth j-hs (K/W)
10
with heatsink compound
without heatsink compound
1
unidirectional
0.1
bidirectional
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
t
P
p
0.01
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
D
Fig.11. Transient thermal impedance Z
pulse width tp.
dIcom/dt (A/ms)
3
10
2
10
10
1
20
40
60
80 100
Fig.12. Minimum critical rate of change of
commutating current dI
temperature, dV
/dt versus junction
com
/dt = 10 V/µs.
com
th j-hs
t
, versus
F TYPE
E TYPE
D TYPE
120
Tj (˚C)
140
June 2003 5 Rev 3.000
Page 7
NXP Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5
min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8
max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8
max
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
June 2003 6 Rev 3.000
Page 8
NXP Semiconductors
Legal information
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