Page 1
Philips Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended for use in motor control circuits BTA212X- 600D -
or with other highly inductive loads. BTA212X- 600E 800E
These devices balance the BTA212X- 600F 800F
requirements of commutation V
performance and gate sensitivity. The voltages
"sensitivegate"Eseries and"logiclevel" I
Dseriesare intended for interfacingwith I
low power drivers, including micro current
DRM
T(RMS)
TSM
controllers.
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Repetitive peak off-state 600 800 V
RMS on-state current 12 12 A
Non-repetitive peak on-state 95 95 A
PIN DESCRIPTION
case
1 main terminal 1
2 main terminal 2
3 gate
case isolated
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 600
voltages
RMS on-state current full sine wave; - 12 A
Ths ≤ 56 ˚C
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 95 A
I2tI
2
t for fusing t = 10 ms - 45 A2s
t = 16.7 ms - 105 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000 1 Rev 1.000
Page 2
Philips Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.0 K/W
without heatsink compound - - 5.5 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA212X- ...D ...D ...E ...F
I
GT
I
L
I
H
V
T
V
GT
I
D
Gate trigger current
Latching current VD = 12 V; IGT = 0.1 A
Holding current VD = 12 V; IGT = 0.1 A - 3.8 15 25 30 mA
On-state voltage IT = 17 A - 1.3 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
Off-state leakage current VD = V
2
VD = 12 V; IT = 0.1 A
T2+ G+ - 1.0 5 10 25 mA
T2+ G- - 2.2 5 10 25 mA
T2- G- - 3.3 5 10 25 mA
T2+ G+ - 6 15 25 30 mA
T2+ G- - 6 25 30 40 mA
T2- G- - 9 25 30 40 mA
...D, E, F
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
; - 0.1 0.5 mA
DRM(max)
Tj = 125 ˚C
2 Device does not trigger in the T2-, G+ quadrant.
February 2000 2 Rev 1.000
Page 3
Philips Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA212X- ...D ...E ...F ...D
/dt Critical rate of rise of VDM = 67% V
dV
D
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 5 3 - A/ms
com
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 5 16 19 100 - A/ms
com
commutating current I
commutating current I
= 12 A;
T(RMS)
dV
/dt = 20V/µs; gate
com
open circuit
= 12 A;
T(RMS)
dV
/dt = 0.1V/µs; gate
com
open circuit
t
gt
Gate controlled turn-on ITM = 12 A; VD = V
time IG = 0.1 A; dIG/dt = 5 A/µs
; 20607030 -V/µs
DRM(max)
...D, E, F
;- - - 2 - µs
DRM(max)
February 2000 3 Rev 1.000
Page 4
Philips Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
Ptot / W
20
15
10
5
0
0 5 10 15
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
dI /dt limit
T
100
10
10us 100us 1ms 10ms 100ms
, where α = conduction angle.
T(RMS)
I
T
T / s
Ths(max) / C
= 180
120
90
60
30
, versus rms
tot
I
TSM
time
T
Tj initial = 25 C max
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
, versus pulse width tp, for
TSM
45
65
85
105
125
IT(RMS) / A
15
10
5
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus heatsink temperature Ths.
IT(RMS) / A
25
20
15
10
5
0
0.01 0.1 1 10
BT138X
56 C
Ths / C
surge duration / s
T(RMS)
,
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Ths ≤ 56˚C.
ITSM / A
100
I
I
80
60
40
20
0
1 10 100 1000
Number of cycles at 50Hz
T
Tj initial = 25 C max
TSM
time
T
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
February 2000 4 Rev 1.000
Page 5
Philips Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
IGT(Tj)
IGT(25°C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj/°C
T2+ G+
T2+ GT2- G-
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
IT / A
40
Tj = 125 C
Tj = 25 C
30
Vo = 1.175 V
Rs = 0.0316 Ohms
20
10
0
0 0.5 1 1.5 2 2.5 3
typ
max
VT / V
Fig.10. Typical and maximum on-state characteristic.
Zth j-hs (K/W)
10
with heatsink compound
without heatsink compound
1
unidirectional
0.1
0.01
bidirectional
t
P
p
D
t
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
dIcom/dt (A/ms)
100
10
1
20 40 60 80 100 120 140
tp / s
pulse width tp.
Tj/˚C
th j-hs
F TYPE
E TYPE
D TYPE
, versus
Fig.12. Minimum Typical critical rate of change of
commutating current dI
temperature, dV
/dt versus junction
com
/dt = 20V/µs.
com
February 2000 5 Rev 1.000
Page 6
Philips Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5
min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8
max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8
max
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
February 2000 6 Rev 1.000
Page 7
Philips Semiconductors Product specification
Three quadrant triacs BTA212X series D, E and F
guaranteed commutation
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 2000 7 Rev 1.000
Loading...