Three quadrant triacsBTA212B series B
high commutation
GENERAL DESCRIPTIONQUICK REFERENCE DATA
Glass passivated high commutationSYMBOLPARAMETERMAX. MAX. MAX. UNIT
triacsinaplastic envelopesuitablefor
surface mounting intended for use inBTA212B- 500B600B800B
circuitswherehighstaticanddynamicV
DRM
dV/dtand high dI/dt can occur. Thesevoltages
devices will commutate the full ratedI
rms current at the maximum ratedI
T(RMS)
TSM
junction temperature, without the aidcurrent
of a snubber.
period
Storage temperature-40150˚C
Operating junction-125˚C
temperature
600
1
800V
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 19971Rev 1.200
Page 2
Philips SemiconductorsProduct specification
Three quadrant triacsBTA212B series B
high commutation
THERMAL RESISTANCES
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistancefull cycle--1.5K/W
junction to mounting base half cycle--2.0K/W
Thermal resistancein free air-60-K/W
junction to ambient
off-state voltageexponential waveform; gate open circuit
dI
/dtCritical rate of change ofVDM = 400 V; Tj = 125 ˚C; I
com
t
gt
commutating currentwithout snubber; gate open circuit
Gate controlled turn-onITM = 12 A; VD = V
timedIG/dt = 5 A/µs
; Tj = 125 ˚C;10004000-V/µs
DRM(max)
= 12 A;-24-A/ms
T(RMS)
; IG = 0.1 A;-2-µs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
September 19972Rev 1.200
Page 3
Philips SemiconductorsProduct specification
Three quadrant triacsBTA212B series B
high commutation
Ptot / W
20
15
10
5
0
051015
BT138
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
dI /dt limit
T
100
10
10us100us1ms10ms100ms
, where α = conduction angle.
T(RMS)
BTA212
I
T / s
Tmb(max) / C
= 180
120
90
60
30
, versus rms
tot
T
Tj initial = 25 C max
I
T
TSM
time
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
, versus pulse width tp, for
TSM
95
102.5
110
117.5
125
IT(RMS) / A
15
10
5
0
-50050100150
Fig.4. Maximum permissible rms current I
versus mounting base temperature Tmb.
IT(RMS) / A
25
20
15
10
5
0
0.010.1110
BT138
Tmb / C
BT138
surge duration / s
99 C
T(RMS)
,
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Tmb ≤ 99˚C.
ITSM / A
100
80
60
40
20
0
1101001000
BT138
I
T
Tj initial = 25 C max
Number of cycles at 50Hz
I
TSM
time
T
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50050100150
BT136
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 19973Rev 1.200
Page 4
Philips SemiconductorsProduct specification
Three quadrant triacsBTA212B series B
high commutation
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50050100150
BTA212
T2+ G+
T2+ GT2- G-
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
IL(Tj)
2.5
1.5
0.5
IL(25 C)
3
2
1
TRIAC
IT / A
40
Tj = 125 C
Tj = 25 C
30
Vo = 1.175 V
Rs = 0.0316 Ohms
20
10
0
00.511.522.53
BT138
typ
max
VT / V
Fig.10. Typical and maximum on-state characteristic.
.
j
Zth j-mb (K/W)
10
1
0.1
0.01
unidirectional
BT138
bidirectional
t
P
p
D
t
0
-50050100150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50050100150
TRIAC
Tj / C
.
j
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
.
j
0.001
10us0.1ms1ms10ms0.1s1s10s
Fig.11. Transient thermal impedance Z
dIcom/dt (A/ms)
1000
100
10
1
20406080100120140
tp / s
pulse width tp.
BTA212
Tj / C
th j-mb
, versus
Fig.12. Typical, critical rate of change of commutating
current dI
/dt versus junction temperature.
com
September 19974Rev 1.200
Page 5
Philips SemiconductorsProduct specification
Three quadrant triacsBTA212B series B
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
2.54 (x2)
Notes
1. Epoxy meets UL94 V0 at 1/8".
MOUNTING INSTRUCTIONS
Dimensions in mm
10.3 max
11 max
15.4
0.85 max
(x2)
4.5 max
1.4 max
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
11.5
2.5
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting
.
Notes
1. Plastic meets UL94 V0 at 1/8".
September 19975Rev 1.200
Page 6
Philips SemiconductorsProduct specification
Three quadrant triacsBTA212B series B
high commutation
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 19976Rev 1.200
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