Page 1
Philips Semiconductors Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope suitable for
surface mounting intended for use in BTA212B- 600D -
motorcontrol circuits or withother highly BTA212B- 600E 800E
inductive loads. These devices balance BTA212B- 600F 800F
the requirements of commutation V
performance and gate sensitivity. The voltages
"sensitivegate"Eseriesand"logiclevel" I
Dseries are intended forinterfacingwith I
low power drivers, including micro current
DRM
T(RMS)
TSM
controllers.
PINNING - SOT404 PIN CONFIGURATION SYMBOL
Repetitive peak off-state 600 800 V
RMS on-state current 12 12 A
Non-repetitive peak on-state 95 95 A
PIN DESCRIPTION
mb
1 main terminal 1
2 main terminal 2
3 gate
mb main terminal 2
2
13
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
I
T(RMS)
Repetitive peak off-state - 600
voltages
RMS on-state current full sine wave; - 12 A
Tmb ≤ 99 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 95 A
I2tI
2
t for fusing t = 10 ms - 45 A2s
t = 16.7 ms - 105 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
February 2000 1 Rev 1.000
Page 2
Philips Semiconductors Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
Thermal resistance full cycle - - 1.5 K/W
junction to mounting base half cycle - - 2.0 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient
BTA212B- ...D ...D ...E ...F
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - 1.0 5 10 25 mA
T2+ G- - 2.2 5 10 25 mA
T2- G- - 3.3 5 10 25 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 6 15 25 30 mA
T2+ G- - 6 25 30 40 mA
T2- G- - 9 25 30 40 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - 3.8 15 25 30 mA
...D, E, F
V
T
V
GT
On-state voltage IT = 17 A - 1.3 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
I
D
Off-state leakage current VD = V
; - 0.1 0.5 mA
DRM(max)
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA212B- ...D ...E ...F ...D
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 5 3 - A/ms
com
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 5 16 19 100 - A/ms
com
commutating current I
commutating current I
= 12 A;
T(RMS)
dV
/dt = 20V/µs; gate
com
open circuit
= 12 A;
T(RMS)
dV
/dt = 0.1V/µs; gate
com
open circuit
; 20607030 -V/µs
DRM(max)
...D, E, F
t
gt
Gate controlled turn-on ITM = 12 A; VD = V
time IG = 0.1 A; dIG/dt = 5 A/µs
DRM(max)
;- - - 2 - µs
2 Device does not trigger in the T2-, G+ quadrant.
February 2000 2 Rev 1.000
Page 3
Philips Semiconductors Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
Ptot / W
20
15
10
5
0
0 5 10 15
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
dI /dt limit
T
100
10
10us 100us 1ms 10ms 100ms
, where α = conduction angle.
T(RMS)
I
T
T / s
Tmb(max) / C
= 180
120
90
60
30
, versus rms
tot
I
TSM
time
T
Tj initial = 25 C max
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
, versus pulse width tp, for
TSM
95
102.5
110
117.5
125
IT(RMS) / A
15
10
5
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus mounting base temperature Tmb.
IT(RMS) / A
25
20
15
10
5
0
0.01 0.1 1 10
BT138
Tmb / C
surge duration / s
99 C
T(RMS)
,
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Tmb ≤ 99˚C.
ITSM / A
100
I
I
80
60
40
20
0
1 10 100 1000
Number of cycles at 50Hz
T
Tj initial = 25 C max
TSM
time
T
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
February 2000 3 Rev 1.000
Page 4
Philips Semiconductors Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
IGT(Tj)
IGT(25°C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj/°C
T2+ G+
T2+ GT2- G-
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj)
IL(25 C)
3
2.5
2
1.5
1
0.5
IT / A
40
Tj = 125 C
Tj = 25 C
30
Vo = 1.175 V
Rs = 0.0316 Ohms
20
10
0
0 0.5 1 1.5 2 2.5 3
typ
max
VT / V
Fig.10. Typical and maximum on-state characteristic.
Zth j-mb (K/W)
10
1
0.1
0.01
unidirectional
bidirectional
t
P
p
D
t
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature Tj.
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature Tj.
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
dIcom/dt (A/ms)
100
10
1
20 40 60 80 100 120 140
tp / s
pulse width tp.
Tj/˚C
th j-mb
Fig.12. Minimum, critical rate of change of
commutating current dI
temperature, dV
/dt versus junction
com
/dt = 20V/µs.
com
, versus
F TYPE
E TYPE
D TYPE
February 2000 4 Rev 1.000
Page 5
Philips Semiconductors Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.4 g
2.54 (x2)
MOUNTING INSTRUCTIONS
Dimensions in mm
10.3 max
11 max
15.4
0.85 max
(x2)
4.5 max
1.4 max
0.5
Fig.13. SOT404 : centre pin connected to mounting base.
11.5
2.5
Notes
1. Plastic meets UL94 V0 at 1/8".
9.0
17.5
2.0
3.8
5.08
Fig.14. SOT404 : minimum pad sizes for surface mounting.
February 2000 5 Rev 1.000
Page 6
Philips Semiconductors Product specification
Three quadrant triacs BTA212B series D, E and F
guaranteed commutation
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 2000
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 2000 6 Rev 1.000
Loading...