Page 1
Philips Semiconductors Objective specification
Three quadrant triacs BTA212 series D, E and F
guaranteed commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a plastic envelope intended for
use in motor control circuits or with other BTA212- 600D
highly inductive loads. These devices BTA212- 600E 800E
balancetherequirementsofcommutation BTA212- 600F 800F
performance and gate sensitivity. The V
"sensitive gate" E series and "logic level" voltages
D series are intended for interfacing with I
low power drivers, including micro I
controllers. current
DRM
T(RMS)
TSM
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Repetitive peak off-state 600 800 V
RMS on-state current 12 12 A
Non-repetitive peak on-state 95 95 A
PIN DESCRIPTION
tab
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
V
DRM
I
T(RMS)
Repetitive peak off-state - 600
voltages
RMS on-state current full sine wave; - 12 A
Tmb ≤ 99 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 95 A
I2tI
2
t for fusing t = 10 ms - 45 A2s
t = 16.7 ms - 105 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1999 1 Rev 1.100
Page 2
Philips Semiconductors Objective specification
Three quadrant triacs BTA212 series D, E and F
guaranteed commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
Thermal resistance full cycle - - 1.5 K/W
junction to mounting base half cycle - - 2.0 K/W
Thermal resistance in free air - 60 - K/W
junction to ambient
BTA212- ...D ...E ...F
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 15 20 25 mA
T2+ G- - - 25 30 40 mA
T2- G- - - 25 30 40 mA
I
H
V
T
V
GT
Holding current VD = 12 V; IGT = 0.1 A - - 15 25 30 mA
On-state voltage IT = 17 A - 1.3 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
I
D
Off-state leakage current VD = V
; - 0.1 0.5 mA
DRM(max)
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA212- ...D ...E ...F
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage Tj = 110 ˚C; exponential
waveform; gate open
circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - - A/ms
com
dI
/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 4.3 5.3 6.3 - - A/ms
com
commutating current I
commutating current I
= 12 A;
T(RMS)
dV
/dt = 20v/µs; gate
com
open circuit
= 12 A;
T(RMS)
dV
/dt = 0.1v/µs; gate
com
open circuit
;306070--V/µs
DRM(max)
t
gt
Gate controlled turn-on ITM = 12 A; VD = V
;- - - 2 - µs
DRM(max)
time IG = 0.1 A; dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1999 2 Rev 1.100
Page 3
Philips Semiconductors Objective specification
Three quadrant triacs BTA212 series D, E and F
guaranteed commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
1,3
3,7
4,5
max
3,0 max
not tinned
1,3
max
(2x)
123
2,54 2,54
2,8
3,0
13,5
min
0,9 max (3x)
5,9
min
15,8
max
0,6
2,4
Fig.1. SOT78 (TO220AB). pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1999 3 Rev 1.100
Page 4
Philips Semiconductors Objective specification
Three quadrant triacs BTA212 series D, E and F
guaranteed commutation
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1999
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1999 4 Rev 1.100
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