Datasheet BTA212-600C Datasheet (Philips)

Page 1
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA212 series C high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope intended foruseincircuitswherehighstaticand BTA212- 500C 600C 800C dynamic dV/dt and high dI/dt can V
occur. These devices will commutate voltages the full rated rms current at the I maximumrated junctiontemperature, I
T(RMS) TSM
without the aid of a snubber. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V RMS on-state current 12 12 12 A
Non-repetitive peak on-state 95 95 95 A
PIN DESCRIPTION
tab
1 main terminal 1 2 main terminal 2 3 gate
tab main terminal 2
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
Repetitive peak off-state - 500
1
voltages
I
T(RMS)
I
TSM
RMS on-state current full sine wave; - 12 A
Tmb 99 ˚C Non-repetitive peak full sine wave; on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 95 A
I2tI
2
t for fusing t = 10 ms - 45 A2s
t = 16.7 ms - 105 A
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs triggering
I V P P
GM
GM GM G(AV)
Peak gate current - 2 A Peak gate voltage - 5 V Peak gate power - 5 W Average gate power over any 20 ms - 0.5 W
period
T
stg
T
j
Storage temperature -40 150 ˚C Operating junction - 125 ˚C temperature
600
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
October 1997 1 Rev 1.000
Page 2
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA212 series C high commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 1.5 K/W junction to mounting base half cycle - - 2.0 K/W Thermal resistance in free air - 60 - K/W junction to ambient
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ 2 - 35 mA T2+ G- 2 - 35 mA T2- G- 2 - 35 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 20 mA T2+ G- - - 30 mA
T2- G- - - 20 mA Holding current VD = 12 V; IGT = 0.1 A - - 15 mA On-state voltage IT = 17 A - 1.3 1.6 V Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage waveform; gate open circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
com
t
gt
commutating current snubber; gate open circuit Gate controlled turn-on ITM = 12 A; VD = V time dIG/dt = 5 A/µs
; Tj = 125 ˚C; exponential 1000 - V/µs
DRM(max)
= 12 A; without 3 14 A/ms
T(RMS)
; IG = 0.1 A; - 2 µs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
October 1997 2 Rev 1.000
Page 3
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA212 series C high commutation
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
10,3 max
1,3
3,7
4,5 max
3,0 max
not tinned
1,3
max
(2x)
123
2,54 2,54
2,8
3,0
13,5
min
0,9 max (3x)
5,9
min
15,8
max
0,6
2,4
Fig.1. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1997 3 Rev 1.000
Page 4
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA212 series C high commutation
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
October 1997 4 Rev 1.000
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