Page 1
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW - For www.nxp.com use www.ween-semi.com
Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn
Semiconductors Co., Ltd. {year}. All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via email or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
Page 2
DDATA SHEET
DISCRETE SEMICONDUCTORS
BTA212 series B
Three quadrant triacs
high commutation
Product specification
September 1997
Page 3
1;3 Semiconductors Product specification
Three quadrant triacs BTA212 series B
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacs in a plastic envelope intended
for use in circuits wherehigh staticand BTA212- 500B 600B 800B
dynamic dV/dt and high dI/dt can V
occur. These devices will commutate voltages
the full rated rms current at the I
maximum rated junction temperature, I
without the aid of a snubber. current
DRM
T(RMS)
TSM
PINNING - TO220AB PIN CONFIGURATION SYMBOL
Repetitive peak off-state 500 600 800 V
RMS on-state current 12 12 12 A
Non-repetitive peak on-state 95 95 95 A
PIN DESCRIPTION
tab
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 500
voltages
RMS on-state current full sine wave; - 12 A
≤ 99 ˚C
T
Non-repetitive peak full sine wave;
on-state current T
mb
= 25 ˚C prior to
j
surge
1
t = 20 ms - 95 A
2
tI
I
dI
/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A; 100 A/μs
T
2
t for fusing t = 10 ms - 45 A2s
on-state current after dI
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
t = 16.7 ms - 105 A
/dt = 0.2 A/μs
G
period
600
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/μs.
September 1997 1 Rev 1.200
Page 4
1;3 Semiconductors Product specification
Three quadrant triacs BTA212 series B
high commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
I
D
Thermal resistance full cycle - - 1.5 K/W
junction to mounting base half cycle - - 2.0 K/W
Thermal resistance in free air - 60 - K/W
junction to ambient
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ 2 18 50 mA
T2+ G- 2 21 50 mA
T2- G- 2 34 50 mA
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 31 60 mA
T2+ G- - 34 90 mA
T2- G- - 30 60 mA
Holding current VD = 12 V; IGT = 0.1 A - 31 60 mA
On-state voltage IT = 17 A - 1.3 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
V
= 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
Off-state leakage current VD = V
D
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
/dt Critical rate of rise of VDM = 67% V
dV
D
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
dI
com
t
gt
off-state voltage exponential waveform; gate open circuit
commutating current without snubber; gate open circuit
Gate controlled turn-on ITM = 12 A; VD = V
time dI
/dt = 5 A/μs
G
; Tj = 125 ˚C; 1000 4000 - V/μs
DRM(max)
= 12 A; - 24 - A/ms
T(RMS)
; IG = 0.1 A; - 2 - μs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
September 1997 2 Rev 1.200
Page 5
1;3 Semiconductors Product specification
Three quadrant triacs BTA212 series B
high commutation
Ptot / W
20
15
10
5
0
0 5 10 15
BT138
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
dI /dt limit
T
100
10
10us 100us 1ms 10ms 100ms
, where α = conduction angle.
T(RMS)
BTA212
I
T / s
Tmb(max) / C
= 180
120
90
60
30
, versus rms
tot
T
Tj initial = 25 C max
I
T
TSM
time
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, t
, versus pulse width tp, for
TSM
≤ 20ms.
p
95
102.5
110
117.5
125
IT(RMS) / A
15
10
5
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus mounting base temperature T
IT(RMS) / A
25
20
15
10
5
0
0.01 0.1 1 10
BT138
Tmb / C
BT138
surge duration / s
99 C
T(RMS)
.
mb
,
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; T
≤ 99˚C.
mb
ITSM / A
100
80
60
40
20
0
1 10 100 1000
BT138
I
T
Tj initial = 25 C max
Number of cycles at 50Hz
I
TSM
time
T
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
BT136
Tj / C
Fig.6. Normalised gate trigger voltage
V
)/ VGT(25˚C), versus junction temperature Tj.
GT(Tj
September 1997 3 Rev 1.200
Page 6
1;3 Semiconductors Product specification
Three quadrant triacs BTA212 series B
high commutation
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BTA212
T2+ G+
T2+ GT2- G-
Tj / C
Fig.7. Normalised gate trigger current
I
)/ IGT(25˚C), versus junction temperature T
GT(Tj
IL(Tj)
2.5
1.5
0.5
IL(25 C)
3
2
1
TRIAC
IT / A
40
Tj = 125 C
Tj = 25 C
30
Vo = 1.175 V
Rs = 0.0316 Ohms
20
10
0
0 0.5 1 1.5 2 2.5 3
BT138
typ
max
VT / V
Fig.10. Typical and maximum on-state characteristic.
.
j
Zth j-mb (K/W)
10
1
0.1
0.01
unidirectional
BT138
bidirectional
t
P
p
D
t
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
TRIAC
Tj / C
.
j
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
.
j
0.001
10us 0.1ms 1ms 10ms 0.1s 1s 10s
Fig.11. Transient thermal impedance Z
dIcom/dt (A/ms)
1000
100
10
1
20 40 60 80 100 120 140
tp / s
pulse width t
BTA212
Tj / C
, versus
.
p
th j-mb
Fig.12. Typical, critical rate of change of commutating
current dI
/dt versus junction temperature.
com
September 1997 4 Rev 1.200
Page 7
1;3 Semiconductors Product specification
Three quadrant triacs BTA212 series B
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
3,0 max
not tinned
1,3
max
(2x)
10,3
max
3,7
123
2,8
3,0
13,5
min
0,9 max (3x)
4,5
max
1,3
5,9
min
15,8
max
0,6
2,54 2,54
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997 5 Rev 1.200
2,4
Page 8
NXP Semiconductors
Legal information
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and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
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NXP Semiconductors
Legal information
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