Datasheet BTA208X-800F, BTA208X-800E, BTA208X-600F, BTA208X-600E, BTA208X-600D Datasheet (Philips)

DISCRETE SEMICONDUCTORS

DATA SH EET

BTA208X series D, E and F

Three quadrant triacs guaranteed
commutation

Objective specification October 1999

Philips Semiconductors Objective specification

Three quadrant triacs

BTA208X series D, E and F

guaranteed commutation

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended foruse in motorcontrol circuits BTA208X- 600D -
or with other highly inductive loads. BTA208X- 600E 800E
These devices balance the BTA208X- 600F 800F
requirements of commutation V
performance and gate sensitivity. The voltages
"sensitivegate"Eseriesand"logiclevel" I
Dseries areintended forinterfacingwith I
low power drivers, including micro current

DRM

T(RMS)
TSM

controllers.

PINNING - SOT186A PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 main terminal 1
2 main terminal 2
3 gate

case isolated

Repetitive peak off-state 600 800 V
RMS on-state current 8 8 A

Non-repetitive peak on-state 65 65 A

case

123

T1T2

G

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-600 -800

V

DRM

I

T(RMS)

I

TSM

Repetitive peak off-state - 600
voltages

RMS on-state current full sine wave; - 8 A

T

≤ 73 ˚C
Non-repetitive peak full sine wave;
on-state current T

hs

= 25 ˚C prior to

j

surge
t = 20 ms - 65 A

2

tI

I

/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/µs

dI

T

2

t for fusing t = 10 ms - 21 A2s

on-state current after dI
triggering

I
V
P
P

T
T

GM

GM
GM
G(AV)

stg
j

Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W

Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature

t = 16.7 ms - 72 A

/dt = 0.2 A/µs

G

period

1

800 V

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

October 1999 2 Rev1.200

Philips Semiconductors Objective specification

Three quadrant triacs

BTA208X series D, E and F

guaranteed commutation

ISOLATION LIMITING VALUE & CHARACTERISTIC

Ths = 25 ˚C unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

isol

C

isol

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-hs

R

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

GT

R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree

Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink

Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 4.5 K/W

without heatsink compound - - 6.5 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient

BTA208X- ...D ...E ...F

Gate trigger current

2

VD = 12 V; IT = 0.1 A

T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA

I

L

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - - 15 20 25 mA
T2+ G- - - 25 30 40 mA
T2- G- - - 25 30 40 mA

I

H

V

T

V

GT

I

D

Holding current VD = 12 V; IGT = 0.1 A - - 15 25 30 mA
On-state voltage IT = 10 A - 1.3 1.65 V

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

= 400 V; IT = 0.1 A; 0.25 0.4 - V

V

D

T

= 125 ˚C

Off-state leakage current VD = V

j

= 125 ˚C

T

j

DRM(max)

2 Device does not trigger in the T2-, G+ quadrant.

; - 0.1 0.5 mA

October 1999 3 Rev1.200

Philips Semiconductors Objective specification

Three quadrant triacs

BTA208X series D, E and F

guaranteed commutation

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BTA208X- ...D ...E ...F

/dt Critical rate of rise of VDM = 67% V

dV

D

off-state voltage T

= 110 ˚C; exponential

j

waveform; gate open

circuit

dI

/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 1.8 3.5 4.5 - A/ms

com

dI

/dt Critical rate of change of VDM = 400 V; Tj = 110 ˚C; 3.5 4.5 5.5 - A/ms

com

t

gt

commutating current I

commutating current I

Gate controlled turn-on ITM = 12 A; VD = V
time I

= 8 A;

T(RMS)

/dt = 20v/µs; gate

dV

com

open circuit

= 8 A;

T(RMS)

/dt = 0.1v/µs; gate

dV

com

open circuit

= 0.1 A; dIG/dt = 5 A/µs

G

;306070 -V/µs

DRM(max)

;- - - 2 - µs

DRM(max)

October 1999 4 Rev1.200

Philips Semiconductors Objective specification

Three quadrant triacs
guaranteed commutation

MECHANICAL DATA

Dimensions in mm
Net Mass: 2 g

Recesses (2x)

2.5

0.8 max. depth

3 max.

not tinned

13.5
min.

0.4

M

10.3
max

3.2

3.0

123

5.08

2.8

2.54

15.8
max.

3

19

max.

seating

plane

0.5

BTA208X series D, E and F

4.6

max

2.9 max

6.4

15.8
max

2.5

0.6

2.5

1.3

1.0 (2x)

0.9

0.7

Fig.1. SOT186A; The seating plane is electrically isolated from all terminals.

Notes

1. Refer to mounting instructions for F-pack envelopes.

2. Epoxy meets UL94 V0 at 1/8".

October 1999 5 Rev1.200

Philips Semiconductors Objective specification

Three quadrant triacs

BTA208X series D, E and F

guaranteed commutation

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1999

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

October 1999 6 Rev1.200

Philips Semiconductors Objective specification

Three quadrant triacs
guaranteed commutation

BTA208X series D, E and F

NOTES

October 1999 7 Rev1.200

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All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
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under patent- or other industrial or intellectual property rights.

1999

Internet: http://www.semiconductors.philips.com

68

Printed in The Netherlands 135002/1160/03/pp8 Date of release: October 1999 Document order number: 9397 750 06621