Datasheet BTA208X-600B.127 Specification

Page 1
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset Management Co. Ltd established Bipolar Power joint venture (JV), WeEn Semiconductors, which will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown below.
WWW - For www.nxp.com use www.ween-semi.com Email - For salesaddresses@nxp.com use salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) “© NXP Semiconductors N.V. {year}. All rights reserved” becomes “© WeEn Semiconductors Co., Ltd. {year}. All rights reserved
If you have any questions related to this document, please contact our nearest sales office via e­mail or phone (details via salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
Page 2
T
O
-
2
2
0
F
BTA208X-600B
3Q Hi-Com Triac
22 May 2014 Product data sheet
1. General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.
2. Features and benefits
3Q technology for improved noise immunity
High commutation capability with maximum false trigger immunity
High immunity to false turn-on by dV/dt
High voltage capability
Isolated mounting base package
Planar passivated for voltage ruggedness and reliability
Triggering in three quadrants only
3. Applications
Electronic thermostats
General purpose motor controls
Rectifier-fed DC inductive loads e.g. DC motors and solenoids
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
DRM
I
TSM
I
T(RMS)
Static characteristics
GT
repetitive peak off­state voltage
non-repetitive peak on­state current
RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;
gate trigger current
full sine wave; T
tp = 20 ms; Fig. 4; Fig. 5
Fig. 3
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
j(init)
= 25 °C;
- - 600 V
- - 65 A
- - 8 A
2 18 50 mAI
2 21 50 mA
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NXP Semiconductors
321
mb
sym051
T1
G
T2
BTA208X-600B
3Q Hi-Com Triac
Symbol Parameter Conditions Min Typ Max Unit
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
2 34 50 mA
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 T1 main terminal 1
2 T2 main terminal 2
3 G gate
mb n.c. mounting base; isolated
TO-220F (SOT186A)
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
BTA208X-600B TO-220F plastic single-ended package; isolated heatsink mounted; 1
mounting hole; 3-lead TO-220 "full pack"
SOT186A
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 2 / 13
Page 4
NXP Semiconductors
Th(°C)
- 50 1501000 50
003aaa969
4
6
2
8
10
I
T(RMS)
0
73 °C
(A)
0
5
10
15
20
25
surge duration (s)
10
- 2
10110
- 1
003aaa970
I
T(RMS)
(A)
BTA208X-600B
3Q Hi-Com Triac
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DRM
I
T(RMS)
TSM
repetitive peak off-state voltage - 600 V
RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;
- 8 A
Fig. 3
non-repetitive peak on-state current
full sine wave; T
tp = 20 ms; Fig. 4; Fig. 5
j(init)
= 25 °C;
- 65 AI
full sine wave; T
j(init)
= 25 °C;
- 71 A
tp = 16.7 ms
I2t
I2t for fusing tp = 10 ms; SIN - 21
A2s
dIT/dt rate of rise of on-state current IT = 0.2 A; IG = 0.2 A; dIG/dt = 0.2 A/µs - 100 A/µs
I
P
P
T
T
GM
GM
G(AV)
stg
j
peak gate current - 2 A
peak gate power - 5 W
average gate power over any 20 ms period - 0.5 W
storage temperature -40 150 °C
junction temperature - 125 °C
Fig. 1. RMS on-state current as a function of heatsink
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 3 / 13
temperature; maximum values
f = 50 Hz; Th = 73 °C
Fig. 2. RMS on-state current as a function of surge
duration; maximum values
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NXP Semiconductors
003aaa967
4
8
12
P
tot
0
I
T(RMS)
(A)
0 1084 62
2
6
10
(W)
71
80
89
107
116
125
98
T
h(max)
(°C)
α = 180°
120°
90°
60°
30°
conduction
angle
(degrees)
form
factor
a
30 60
90 120 180
4
2.8
2.2
1.9
1.57
α
003aaa968
40
20
60
80
I
TSM
0
number of cycles
1 10
3
10
2
10
(A)
I
TSM
t
I
T
T
j(init)
= 25 °C max
1/f
α = conduction angle a = form factor = I
Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values
T(RMS)
/ I
T(AV)
BTA208X-600B
3Q Hi-Com Triac
f = 50 Hz
Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 4 / 13
Page 6
NXP Semiconductors
003aab121
tp(ms)
10
- 2
10
2
1010
- 1
1
10
2
10
3
I
TSM
(A)
10
(1)
I
TSM
t
I
T
T
j(init)
=25°C max
t
p
tp ≤ 20 ms
(1) dIT/dt limit
Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values
BTA208X-600B
3Q Hi-Com Triac
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 5 / 13
Page 7
NXP Semiconductors
003aaf915
10
- 1
10
- 2
1
10
Z
th(j-h)
(K/W)
10
- 3
tp(s)
10
- 5
1 1010
- 1
10
- 2
10
- 4
10
- 3
t
p
P
t
(1) (2)
(3) (4)
BTA208X-600B
3Q Hi-Com Triac
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-h)
th(j-a)
thermal resistance from junction to heatsink
thermal resistance from junction to ambient
full cycle or half cycle; with heatsink compound; Fig. 6
full cycle or half cycle; without heatsink compound; Fig. 6
in free air - 55 - K/W
- - 4.5 K/WR
- - 6.5 K/W
(1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
C
isol
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 6 / 13
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; Th = 25 °C
- - 2500 V
- 10 - pF
Page 8
NXP Semiconductors
BTA208X-600B
3Q Hi-Com Triac
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
I
GT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
2 18 50 mA
I
L
I
H
V
T
GT
I
D
latching current
holding current VD = 12 V; Tj = 25 °C; Fig. 9 - 31 60 mA
on-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V
gate trigger voltage
off-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA
Dynamic characteristics
dVD/dt rate of rise of off-state
voltage
dI
/dt rate of change of
com
commutating current
VD = 12 V; IT = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 7
VD = 12 V; IG = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2+ G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IG = 0.1 A; T2- G-;
Tj = 25 °C; Fig. 8
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 11
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 11
VDM = 402 V; Tj = 125 °C; (VDM = 67%
of V
); exponential waveform; gate
DRM
open circuit
VD = 400 V; Tj = 125 °C; I
dV
/dt = 20 V/µs; (snubberless
com
T(RMS)
= 8 A;
condition); gate open circuit; Fig. 12
2 21 50 mA
2 34 50 mA
- 31 60 mA
- 34 90 mA
- 30 60 mA
- 0.7 1 VV
0.25 0.4 - V
1000 4000 - V/µs
- 14 - A/ms
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 7 / 13
Page 9
NXP Semiconductors
Tj(°C)
- 50 1501000 50
003aac888
1
2
3
0
(1)
(2)
(3)
I
GT
I
GT(25°C)
Tj (°C)
-50 1501000 50
001aab100
1
2
3
0
I
L
I
L(25°C)
Tj (°C)
-50 1501000 50
001aab099
1
2
3
0
I
H
I
H(25°C)
003aaa971
VT(V)
0 321
10
15
5
20
25
I
T
(A)
0
(1) (2) (3)
BTA208X-600B
3Q Hi-Com Triac
(1) T2- G­(2) T2+ G­(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
Fig. 9. Normalized holding current as a function of
junction temperature
Fig. 8. Normalized latching current as a function of
junction temperature
Vo = 1.264 V; Rs = 0.0378 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 8 / 13
Fig. 10. On-state current as a function of on-state
voltage
Page 10
NXP Semiconductors
Tj (°C)
-50 1501000 50
001aab101
0.8
1.2
1.6
0.4
V
GT
V
GT(25°C)
003aaa973
Tj(°C)
20 14010060
10
2
10
10
3
dI
com
/dt
1
(A/ms)
typ
min
BTA208X-600B
3Q Hi-Com Triac
Fig. 11. Normalized gate trigger voltage as a function of
junction temperature
Fig. 12. Rate of change of commutating current as a
function of junction temperature; typical and minimum values
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 9 / 13
Page 11
NXP Semiconductors
REFERENCES
OUTLINE VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC JEDEC JEITA
SOT186A 3-lead TO-220F
0 5 10 mm
scale
Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 'full pack'
SOT186A
A
A
1
Q
c
K
j
Notes
1. Terminal dimensions within this zone are uncontrolled.
2. Both recesses are # 2.5 × 0.8 max. depth
D
D
1
L
L
2
L
1
b
1
b
2
e
1
e
b
w M
1 2 3
q
E
P
T
UNIT
D
b
1
D
1
e qQPLc
L
2
(1)
max.
e
1
A
5.08
3
mm
4.6
4.0
A
1
2.9
2.5
b
0.9
0.7
1.1
0.9
b
2
1.4
1.0
0.7
0.4
15.8
15.2
6.5
6.3
E
10.3
9.7
2.54
14.4
13.5
T
(2)
2.5 0.4
L
1
3.30
2.79
j
2.7
1.7
K
0.6
0.4
2.6
2.3
3.0
2.6
w
3.2
3.0
DIMENSIONS (mm are the original dimensions)
02-04-09 06-02-14
mounting
base
11. Package outline
BTA208X-600B
3Q Hi-Com Triac
Fig. 13. Package outline TO-220F (SOT186A)
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 10 / 13
Page 12
NXP Semiconductors
12. Legal information
12.1 Data sheet status
Document status [1][2]
Objective
[short] data
sheet
Preliminary
[short] data
sheet
Product
[short] data
sheet
[1] Please consult the most recently issued document before initiating or
completing a design. [2] The term 'short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Product status [3]
Development This document contains data from
Qualification This document contains data from the
Production This document contains the product
Definition
the objective specification for product development.
preliminary specification.
specification.
BTA208X-600B
3Q Hi-Com Triac
In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation ­lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk.
Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. NXP Semiconductors takes no responsibility for the content in this document if provided by an information source outside of NXP Semiconductors.
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the
Product data sheet 22 May 2014 11 / 13
Page 13
NXP Semiconductors
grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non­automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors’ warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions.
BTA208X-600B
3Q Hi-Com Triac
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV, FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I­CODE, ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse, QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET, TrenchMOS, TriMedia and UCODE — are trademarks of NXP
Semiconductors N.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation.
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 12 / 13
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NXP Semiconductors
13. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information ............................................. 2
7 Limiting values .......................................................3
8 Thermal characteristics .........................................6
9 Isolation characteristics ........................................6
10 Characteristics .......................................................7
11 Package outline ................................................... 10
12 Legal information .................................................11
12.1 Data sheet status ............................................... 11
12.2 Definitions ...........................................................11
12.3 Disclaimers .........................................................11
12.4 Trademarks ........................................................ 12
BTA208X-600B
3Q Hi-Com Triac
© NXP Semiconductors N.V. 2014. All rights reserved
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 22 May 2014
BTA208X-600B All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 22 May 2014 13 / 13
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