Three quadrant triacsBTA208X series B
high commutation
GENERAL DESCRIPTIONQUICK REFERENCE DATA
Glass passivated high commutationSYMBOLPARAMETERMAX. MAX. MAX. UNIT
triacs in a full pack, plastic envelope
intended for use in motor controlBTA208X-500B600B800B
circuitswherehighstaticanddynamicV
DRM
dV/dtand highdI/dt can occur. Thesevoltages
devices will commutate the full ratedI
rms current at the maximum ratedI
T(RMS)
TSM
junction temperature, without the aidon-state current
of a snubber.
on-state current afterdIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current-2A
Peak gate voltage-5V
Peak gate power-5W
Average gate powerover any 20 ms-0.5W
period
Storage temperature-40150˚C
Operating junction-125˚C
temperature
600
1
800V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
September 19971Rev 1.200
Page 2
Philips SemiconductorsProduct specification
Three quadrant triacsBTA208X series B
high commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
R
th j-hs
R
th j-a
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal-2500V
three terminals to externalwaveform;
heatsinkR.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz-10-pF
heatsink
Thermal resistancefull or half cycle
junction to heatsinkwith heatsink compound--4.5K/W
without heatsink compound--6.5K/W
Thermal resistancein free air-55-K/W
junction to ambient
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C0.250.4-V
Off-state leakage currentVD = V
; Tj = 125 ˚C-0.10.5mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOLPARAMETERCONDITIONSMIN.TYP.MAX.UNIT
dVD/dtCritical rate of rise ofVDM = 67% V
off-state voltageexponential waveform; gate open circuit
dI
/dtCritical rate of change ofVDM = 400 V; Tj = 125 ˚C; I
com
t
gt
commutating currentwithout snubber; gate open circuit
Gate controlled turn-onITM = 12 A; VD = V
timedIG/dt = 5 A/µs
; Tj = 125 ˚C;10004000-V/µs
DRM(max)
= 8 A;-14-A/ms
T(RMS)
; IG = 0.1 A;-2-µs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
September 19972Rev 1.200
Page 3
Philips SemiconductorsProduct specification
Three quadrant triacsBTA208X series B
high commutation
Ptot / W
12
10
8
6
4
2
0
0246810
BT137
1
IT(RMS) / A
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
dI /dt limit
T
100
10
10us100us1ms10ms100ms
, where α = conduction angle.
T(RMS)
BTA208
BTA208
I
T
T / s
Ths(max) / C
= 180
120
90
60
30
, versus rms
tot
I
TSM
time
T
Tj initial = 25 C max
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
, versus pulse width tp, for
TSM
71
80
89
98
107
116
125
IT(RMS) / A
10
8
6
4
2
0
-50050100150
Fig.4. Maximum permissible rms current I
versus heatsink temperature Ths.
IT(RMS) / A
25
20
15
10
5
0
0.010.1110
BT137X
Ths / C
BT137
surge duration / s
73 C
T(RMS)
,
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Ths ≤ 73˚C.
ITSM / A
80
70
60
50
40
30
20
10
0
1101001000
1
BT137
I
T
Tj initial = 25 C max
Number of cycles at 50Hz
I
TSM
T
time
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50050100150
BT136
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 19973Rev 1.200
Page 4
Philips SemiconductorsProduct specification
Three quadrant triacsBTA208X series B
high commutation
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50050100150
BTA212
T2+ G+
T2+ GT2- G-
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
IL(Tj)
2.5
1.5
IL(25 C)
3
2
1
TRIAC
IT / A
25
Tj = 125 C
Tj = 25 C
20
Vo = 1.264 V
Rs = 0.0378 Ohms
15
10
5
0
00.511.522.53
BT137
typ
VT / V
max
Fig.10. Typical and maximum on-state characteristic.
.
j
Zth j-hs (K/W)
10
with heatsink compound
without heatsink compound
1
0.1
unidirectional
BT137
bidirectional
t
P
p
D
0.5
0
-50050100150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50050100150
TRIAC
Tj / C
.
j
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
.
j
t
0.01
10us0.1ms1ms10ms0.1s1s10s
tp / s
Fig.11. Transient thermal impedance Z
pulse width tp.
dIcom/dt (A/ms)
1000
100
10
1
20406080100120140
BTA208
Tj / C
th j-hs
, versus
Fig.12. Typical, critical rate of change of commutating
current dI
/dt versus junction temperature.
com
September 19974Rev 1.200
Page 5
Philips SemiconductorsProduct specification
Three quadrant triacsBTA208X series B
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5
min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8
max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8
max
Fig.13. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 19975Rev 1.200
Page 6
Philips SemiconductorsProduct specification
Three quadrant triacsBTA208X series B
high commutation
DEFINITIONS
Data sheet status
Objective specificationThis data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specificationThis data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 19976Rev 1.200
Loading...
+ hidden pages
You need points to download manuals.
1 point = 1 manual.
You can buy points or you can get point for every manual you upload.