Page 1
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA208 series C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glass passivated high commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacsinaplasticenvelope intended for
use in circuits where high static and BTA208- 500C 600C 800C
dynamicdV/dtandhighdI/dtcanoccur. V
DRM
Repetitive peak 500 600 800 V
These devices will commutate the full off-state voltages
ratedrmscurrentatthemaximumrated I
T(RMS)
RMS on-state current 8 8 8 A
junctiontemperature,without theaid of I
TSM
Non-repetitive peak 65 65 65 A
a snubber. on-state current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION
1 main terminal 1
2 main terminal 2
3 gate
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 8 A
Tmb ≤ 102 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
surge
t = 20 ms - 65 A
t = 16.7 ms - 71 A
I2tI
2
t for fusing t = 10 ms - 21 A2s
dIT/dt Repetitive rate of rise of ITM = 12 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
T1T2
G
123
tab
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
October 1997 1 Rev 1.000
Page 2
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA208 series C
high commutation
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 2.0 K/W
junction to mounting base half cycle - - 2.4 K/W
R
th j-a
Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ 2 - 35 mA
T2+ G- 2 - 35 mA
T2- G- 2 - 35 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 20 mA
T2+ G- - - 30 mA
T2- G- - - 20 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - - 15 mA
V
T
On-state voltage IT = 10 A - 1.3 1.65 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
I
D
Off-state leakage current VD = V
DRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
DRM(max)
; Tj = 125 ˚C; exponential 1000 - V/µs
off-state voltage waveform; gate open circuit
dI
com
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
T(RMS)
= 8 A; without 3 14 A/ms
commutating current snubber; gate open circuit
t
gt
Gate controlled turn-on ITM = 12 A; VD = V
DRM(max)
; IG = 0.1 A; - 2 µs
time dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
October 1997 2 Rev 1.000
Page 3
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA208 series C
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Fig.1. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
10,3
max
3,7
2,8
3,0
3,0 max
not tinned
1,3
max
(2x)
123
2,4
0,6
4,5
max
5,9
min
15,8
max
1,3
2,54 2,54
0,9 max (3x)
13,5
min
October 1997 3 Rev 1.000
Page 4
Philips Semiconductors Preliminary specification
Three quadrant triacs BTA208 series C
high commutation
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1997 4 Rev 1.000
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