Page 1
Philips Semiconductors Product specification
Three quadrant triacs BTA204X series B and C
high commutation
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated high commutation triacs in SYMBOL PARAMETER MAX. MAX. MAX. UNIT
a plastic full pack envelope intended
foruseincircuits wherehigh staticand BTA204X- 500B 600B 800B
dynamic dV/dt and high dI/dt can BTA204X- 500C 600C 800C
occur. These devices will commutate V
the full rated rms current at the off-state voltages
maximum rated junction temperature I
without the aid of a snubber. I
DRM
T(RMS)
TSM
PINNING - SOT186A PIN CONFIGURATION SYMBOL
Repetitive peak 500 600 800 V
RMS on-state current 4 4 4 A
Non-repetitive peak on-state 25 25 25 A
current
PIN DESCRIPTION
case
1 main terminal 1
2 main terminal 2
3 gate
case isolated
123
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
I
T(RMS)
I
TSM
Repetitive peak off-state - 500
voltages
RMS on-state current full sine wave; - 4 A
Ths ≤ 92 ˚C
Non-repetitive peak full sine wave;
on-state current Tj = 25 ˚C prior to
1
surge
t = 20 ms - 25 A
I2tI
2
t for fusing t = 10 ms - 3.1 A2s
t = 16.7 ms - 27 A
dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; 100 A/µs
on-state current after dIG/dt = 0.2 A/µs
triggering
I
V
P
P
T
T
GM
GM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms - 0.5 W
period
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
600
1
800 V
T1T2
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
December 1998 1 Rev 1.000
Page 2
Philips Semiconductors Product specification
Three quadrant triacs BTA204X series B and C
high commutation
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
isol
C
isol
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-hs
R
th j-a
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal - 2500 V
three terminals to external waveform;
heatsink R.H. ≤ 65% ; clean and dustfree
Capacitance from T2 to external f = 1 MHz - 10 - pF
heatsink
Thermal resistance full or half cycle
junction to heatsink with heatsink compound - - 5.5 K/W
without heatsink compound - - 7.2 K/W
Thermal resistance in free air - 55 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA204X- ...B ...C
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 50 35 mA
T2+ G- - - 50 35 mA
T2- G- - - 50 35 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 30 20 mA
T2+ G- - - 45 30 mA
T2- G- - - 30 20 mA
I
H
V
T
V
GT
Holding current VD = 12 V; IGT = 0.1 A - - 30 20 mA
On-state voltage IT = 5 A - 1.4 1.7 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
I
D
Off-state leakage current VD = V
; Tj = 125 ˚C - 0.1 0.5 mA
DRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. UNIT
BTA204X- ...B ...C
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform; gate open circuit
dI
/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; I
com
t
gt
commutating current dV
/dt = 20V/µs; gate open circuit
com
Gate controlled turn-on ITM = 12 A; VD = V
time dIG/dt = 5 A/µs
; Tj = 125 ˚C; 1000 1000 - V/µs
DRM(max)
= 4 A; 6 3 - A/ms
T(RMS)
; IG = 0.1 A; - - 2 µs
DRM(max)
2 Device does not trigger in the T2-, G+ quadrant.
December 1998 2 Rev 1.000
Page 3
Philips Semiconductors Product specification
Three quadrant triacs BTA204X series B and C
high commutation
Ptot / W
8
7
6
5
4
3
2
1
0
012345
Fig.1. Maximum on-state dissipation, P
on-state current, I
ITSM / A
1000
100
T2- G+ quadrant
BT136
1
IT(RMS) / A
, where α = conduction angle.
T(RMS)
BT136
I
T
dI /dt limit
T
Ths(max) / C
120
90
60
30
tot
T
Tj initial = 25 C max
= 180
, versus rms
I
TSM
time
81
86.5
92
97.5
103
108.5
114
119.5
125
IT(RMS) / A
5
4
3
2
1
0
-50 0 50 100 150
Fig.4. Maximum permissible rms current I
versus heatsink temperature Ths.
IT(RMS) / A
12
10
8
6
4
2
BT136X
92 C
Ths / C
T(RMS)
BT136
,
10
10us 100us 1ms 10ms 100ms
T / s
Fig.2. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, tp ≤ 20ms.
ITSM / A
30
25
20
15
10
5
0
1 10 100 1000
, versus pulse width tp, for
TSM
BT136
I
T
T
Tj initial = 25 C max
Number of cycles at 50Hz
I
TSM
time
Fig.3. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
, versus number of cycles, for
TSM
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Ths ≤ 92˚C.
VGT(Tj)
BT136
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
December 1998 3 Rev 1.000
Page 4
Philips Semiconductors Product specification
Three quadrant triacs BTA204X series B and C
high commutation
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BTA204
T2+ G+
T2+ GT2- G-
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
IL(Tj)
2.5
1.5
IL(25 C)
3
2
1
TRIAC
IT / A
12
Tj = 125 C
Tj = 25 C
10
Vo = 1.27 V
Rs = 0.091 ohms
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3
BT136
typ max
VT / V
Fig.10. Typical and maximum on-state characteristic.
.
j
Zth j-hs (K/W)
10
with heatsink compound
without heatsink compound
1
0.1
unidirectional
BT136
bidirectional
t
P
p
D
0.5
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
IH(Tj)
IH(25C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
TRIAC
Tj / C
.
j
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
.
j
0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Fig.11. Transient thermal impedance Z
pulse width tp.
t
th j-hs
, versus
December 1998 4 Rev 1.000
Page 5
Philips Semiconductors Product specification
Three quadrant triacs BTA204X series B and C
high commutation
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
Recesses (2x)
2.5
0.8 max. depth
3 max.
not tinned
13.5
min.
0.4
M
max
3.2
3.0
123
5.08
2.8
2.54
15.8
max.
3
19
max.
seating
plane
0.5
2.5
4.6
max
2.9 max
6.4
0.6
2.5
15.8
max
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
1.3
1.0 (2x)
0.9
0.7
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
December 1998 5 Rev 1.000
Page 6
Philips Semiconductors Product specification
Three quadrant triacs BTA204X series B and C
high commutation
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
December 1998 6 Rev 1.000
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