Datasheet BTA204W-600F, BTA204W-600E, BTA204W-600D Datasheet (Philips)

DATA SH EET

Product specification December 1998

DISCRETE SEMICONDUCTORS

BTA204W series D, E and F

Three quadrant triacs guaranteed
commutation

December 1998 2 Rev1.000

Philips Semiconductors Product specification

Three quadrant triacs
guaranteed commutation

BTA204W series D, E and F

GENERAL DESCRIPTION QUICK REFERENCE DATA

Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacsin a plasticenvelopesuitable for
surface mounting, intended for use in BTA204W- 500D 600D -
motor control circuits or with other BTA204W- 500E 600E 800E
highly inductive loads. These devices BTA204W- 500F 600F 800F
balance the requirements of V

DRM

Repetitive peak 500 600 800 V
commutation performance and gate off-state voltages
sensitivity. The "sensitive gate" E I

T(RMS)

RMS on-state current 1 1 1 A
series and "logic level" D series are I

TSM

Non-repetitive peak on-state 10 10 10 A
intendedfor interfacingwith lowpower current
drivers, including micro controllers.

PINNING - SOT223 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

1 main terminal 1
2 main terminal 2
3 gate

tab main terminal 2

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500 -600 -800

V

DRM

Repetitive peak off-state - 500

1

600

1

800 V

voltages

I

T(RMS)

RMS on-state current full sine wave; - 1 A

T

sp

≤ 108 ˚C

I

TSM

Non-repetitive peak full sine wave;
on-state current T

j

= 25 ˚C prior to
surge
t = 20 ms - 10 A
t = 16.7 ms - 11 A

I

2

tI

2

t for fusing t = 10 ms - 0.5 A2s

dI

T

/dt Repetitive rate of rise of ITM = 1.5 A; 100 A/µs

on-state current after I

G

= 0.2 A;

triggering dI

G

/dt = 0.2 A/µs

I

GM

Peak gate current - 2 A

V

GM

Peak gate voltage - 5 V

P

GM

Peak gate power - 5 W

P

G(AV)

Average gate power over any 20 ms - 0.5 W

period

T

stg

Storage temperature -40 150 ˚C

T

j

Operating junction - 125 ˚C
temperature

T1T2

G

4

1

23

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

December 1998 3 Rev1.000

Philips Semiconductors Product specification

Three quadrant triacs
guaranteed commutation

BTA204W series D, E and F

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

R

th j-sp

Thermal resistance full or half cycle - - 15 K/W
junction to solder point

R

th j-a

Thermal resistance pcb mounted; minimum footprint - 156 - K/W
junction to ambient pcb mounted; pad area as in fig:2 - 70 - K/W

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BTA204W- ...D ...E ...F

I

GT

Gate trigger current

2

VD = 12 V; IT = 0.1 A

T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA

I

L

Latching current VD = 12 V; IGT = 0.1 A

T2+ G+ - - 6 12 20 mA
T2+ G- - - 9 18 30 mA
T2- G- - - 6 12 20 mA

I

H

Holding current VD = 12 V; IGT = 0.1 A - - 6 12 20 mA

V

T

On-state voltage IT = 2 A - 1.2 1.5 V

V

GT

Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V

V

D

= 400 V; IT = 0.1 A; 0.25 0.4 - V

T

j

= 125 ˚C

I

D

Off-state leakage current VD = V

DRM(max)

; - 0.1 0.5 mA

T

j

= 125 ˚C

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

BTA204W- ...D ...E ...F

dV

D

/dt Critical rate of rise of VDM = 67% V

DRM(max)

;20 3050- -V/µs

off-state voltage T

j

= 125 ˚C; exponential
waveform; gate open
circuit

dI

com

/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 1.0 2.0 2.5 - - A/ms

commutating current I

T(RMS)

= 1 A;

dV

com

/dt = 20V/µs; gate

open circuit

dI

com

/dt Critical rate of change of VDM = 400 V; Tj = 125 ˚C; 5.0 - - - - A/ms

commutating current I

T(RMS)

= 1 A;

dV

com

/dt = 0.1V/µs; gate

open circuit

t

gt

Gate controlled turn-on ITM = 12 A; VD = V

DRM(max)

;- - - 2 - µs

time I

G

= 0.1 A; dIG/dt = 5 A/µs

2 Device does not trigger in the T2-, G+ quadrant.

December 1998 4 Rev1.000

Philips Semiconductors Product specification

Three quadrant triacs
guaranteed commutation

BTA204W series D, E and F

Fig.1. Maximum on-state dissipation, P

tot

, versus rms

on-state current, I

T(RMS)

, where α = conduction angle.

Fig.2. Maximum permissible non-repetitive peak

on-state current I

TSM

, versus pulse width tp, for

sinusoidal currents, t

p

≤ 20ms.

Fig.3. Maximum permissible non-repetitive peak

on-state current I

TSM

, versus number of cycles, for

sinusoidal currents, f = 50 Hz.

Fig.4. Maximum permissible rms current I

T(RMS)

,

versus solder point temperature T

sp

.

Fig.5. Maximum permissible repetitive rms on-state

current I

T(RMS)

, versus surge duration, for sinusoidal

currents, f = 50 Hz; T

sp

≤ 108˚C.

Fig.6. Normalised gate trigger voltage

V

GT(Tj

)/ VGT(25˚C), versus junction temperature Tj.

0 0.2 0.4 0.6 0.8 1 1.2

0

0.2

0.4

0.6

0.8

1

1.2

1.4

= 180

120
90

60
30

BT134W

IT(RMS) / A

Ptot / W

Tsp(max) / C

125

122

119

116

113

110

107

104

1

-50 0 50 100 150

0

0.2

0.4

0.6

0.8

1

1.2

BT134W

Tsp / C

IT(RMS) / A

108 C

1

10

100

1000

BT134W

T / s

ITSM / A

10us 100us 1ms 10ms 100ms

T

I

TSM

time

I

Tj initial = 25 C max

T

dI /dt limit

T

T2- G+ quadrant

0.01 0.1 1 10

0

0.5

1

1.5

2

BT134W

surge duration / s

IT(RMS) / A

1 10 100 1000

0

2

4

6

8

10

12

BT134W

Number of cycles at 50Hz

ITSM / A

T

I

TSM

time

I

Tj initial = 25 C max

T

-50 0 50 100 150

0.4

0.6

0.8

1

1.2

1.4

1.6

BT136

Tj / C

VGT(Tj)

VGT(25 C)

December 1998 5 Rev1.000

Philips Semiconductors Product specification

Three quadrant triacs
guaranteed commutation

BTA204W series D, E and F

Fig.7. Normalised gate trigger current

I

GT(Tj

)/ IGT(25˚C), versus junction temperature T

j

.

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature T

j

.

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature T

j

.

Fig.10. Typical and maximum on-state characteristic.

Fig.11. Transient thermal impedance Z

th j-sp

, versus

pulse width t

p

.

-50 0 50 100 150

0

0.5

1

1.5

2

2.5

3

BTA204

Tj / C

T2+ G+
T2+ G­T2- G-

IGT(Tj)

IGT(25 C)

0 0.5 1 1.5 2

0

0.5

1

1.5

2

BT134W

VT / V

IT / A

Tj = 125 C

typ

max

Tj = 25 C

Vo = 1.0 V
Rs = 0.21 Ohms

-50 0 50 100 150

0

0.5

1

1.5

2

2.5

3

TRIAC

Tj / C

IL(Tj)

IL(25 C)

10us 0.1ms 1ms 10ms 0.1s 1s 10s

tp / s

0.01

0.1

1

10

Zth j-sp (K/W)

100

t

p

P

t

D

unidirectional

bidirectional

BT134W

-50 0 50 100 150

0

0.5

1

1.5

2

2.5

3

TRIAC

Tj / C

IH(Tj)

IH(25C)

December 1998 6 Rev1.000

Philips Semiconductors Product specification

Three quadrant triacs
guaranteed commutation

BTA204W series D, E and F

MOUNTING INSTRUCTIONS

Dimensions in mm.

Fig.12. soldering pattern for surface mounting SOT223.

MECHANICAL DATA

Dimensions in mm
Net Mass: 0.11 g

Fig.13. SOT223 surface mounting package.

Notes

1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".
Order code: 9397 750 00505.

2. Epoxy meets UL94 V0 at 1/8".

3.8

min

6.3

2.3

4.6

1.5

min

1.5
min

1.5

min
(3x)

6.7

6.3

3.1

2.9

4

1

23

2.3

1.05

0.85

0.80

0.60

4.6

3.7

3.3

7.3

6.7

B

A

0.10

0.02

13

16

max

1.8

max

10
max

0.32

0.24

(4x)

B

M

0.1

AM0.2

December 1998 7 Rev1.000

Philips Semiconductors Product specification

Three quadrant triacs
guaranteed commutation

BTA204W series D, E and F

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1998

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.

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accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999

68

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Printed in The Netherlands 135002/1160/03/pp8 Date of release: December 1998 Document order number: 9397 75006618