Page 1
DATA SH EET
Product specification December 1998
DISCRETE SEMICONDUCTORS
BTA204S series D, E and F
BTA204M series D, E and F
Three quadrant triacs guaranteed
commutation
Page 2
December 1998 2 Rev1.000
Philips Semiconductors Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
GENERAL DESCRIPTION QUICK REFERENCE DATA
Passivated guaranteed commutation SYMBOL PARAMETER MAX. MAX. MAX. UNIT
triacsin a plasticenvelopesuitable for
surface mounting, intended for use in BTA204S (or BTA204M)- 500D 600D motor control circuits or with other BTA204S (or BTA204M)- 500E 600E 800E
highly inductive loads. These devices BTA204S (or BTA204M)- 500F 600F 800F
balance the requirements of V
DRM
Repetitive peak 500 600 800 V
commutation performance and gate off-state voltages
sensitivity. The "sensitive gate" E I
T(RMS)
RMS on-state current 4 4 4 A
series and "logic level" D series are I
TSM
Non-repetitive peak on-state 25 25 25 A
intendedfor interfacingwith lowpower current
drivers, including micro controllers.
PINNING - SOT428 PIN CONFIGURATION SYMBOL
PIN Standard Alternative
NUMBER S M
1 MT1 gate
2 MT2 MT2
3 gate MT1
tab MT2 MT2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
V
DRM
Repetitive peak off-state - 500
1
600
1
800 V
voltages
I
T(RMS)
RMS on-state current full sine wave; - 4 A
T
mb
≤ 107 ˚C
I
TSM
Non-repetitive peak full sine wave;
on-state current T
j
= 25 ˚C prior to
surge
t = 20 ms - 25 A
t = 16.7 ms - 27 A
I
2
tI
2
t for fusing t = 10 ms - 3.1 A2s
dI
T
/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; 100 A/µs
on-state current after dI
G
/dt = 0.2 A/µs
triggering
I
GM
Peak gate current - 2 A
V
GM
Peak gate voltage - 5 V
P
GM
Peak gate power - 5 W
P
G(AV)
Average gate power over any 20 ms - 0.5 W
period
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 125 ˚C
temperature
1
2
3
tab
T1T2
G
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.
Page 3
December 1998 3 Rev1.000
Philips Semiconductors Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance full cycle - - 3.0 K/W
junction to mounting base half cycle - - 3.7 K/W
R
th j-a
Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 - 75 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA204S (or BTA204M)- ...D ...E ...F
I
GT
Gate trigger current
2
VD = 12 V; IT = 0.1 A
T2+ G+ - - 5 10 25 mA
T2+ G- - - 5 10 25 mA
T2- G- - - 5 10 25 mA
I
L
Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - - 6 12 20 mA
T2+ G- - - 9 18 30 mA
T2- G- - - 6 12 20 mA
I
H
Holding current VD = 12 V; IGT = 0.1 A - - 6 12 20 mA
V
T
On-state voltage IT = 5 A - 1.4 1.7 V
V
GT
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
V
D
= 400 V; IT = 0.1 A; 0.25 0.4 - V
T
j
= 125 ˚C
I
D
Off-state leakage VD = V
DRM(max)
; Tj = 125 ˚C - 0.1 0.5 mA
current
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BTA204S (or BTA204M)- ...D ...E ...F
dV
D
/dt Critical rate of rise of VDM = 67% V
DRM(max)
;203050--V/µs
off-state voltage T
j
= 125 ˚C; exponential
waveform; gate open circuit
dI
com
/dt Critical rate of change VDM = 400 V; Tj = 125 ˚C; 1.0 2.0 2.5 - - A/ms
of commutating current I
T(RMS)
= 4 A;
dV
com
/dt = 20V/µs; gate
open circuit
dI
com
/dt Critical rate of change VDM = 400 V; Tj = 125 ˚C; 5.0 - - - - A/ms
of commutating current I
T(RMS)
= 4 A;
dV
com
/dt = 0.1V/µs; gate
open circuit
t
gt
Gate controlled turn-on ITM = 12 A; VD = V
DRM(max)
;---2-µs
time I
G
= 0.1 A; dIG/dt = 5 A/µs
2 Device does not trigger in the T2-, G+ quadrant.
Page 4
December 1998 4 Rev1.000
Philips Semiconductors Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
Fig.1. Maximum on-state dissipation, P
tot
, versus rms
on-state current, I
T(RMS)
, where α = conduction angle.
Fig.2. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus pulse width tp, for
sinusoidal currents, t
p
≤ 20ms.
Fig.3. Maximum permissible non-repetitive peak
on-state current I
TSM
, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
Fig.4. Maximum permissible rms current I
T(RMS)
,
versus mounting base temperature T
mb
.
Fig.5. Maximum permissible repetitive rms on-state
current I
T(RMS)
, versus surge duration, for sinusoidal
currents, f = 50 Hz; T
mb
≤ 107˚C.
Fig.6. Normalised gate trigger voltage
V
GT(Tj
)/ VGT(25˚C), versus junction temperature Tj.
012345
0
1
2
3
4
5
6
7
8
= 180
120
90
60
30
BT136
IT(RMS) / A
Ptot / W
Tmb(max) / C
125
122
119
116
113
110
107
104
101
1
-50 0 50 100 150
0
1
2
3
4
5
BT136
Tmb / C
IT(RMS) / A
107 C
10us 100us 1ms 10ms 100ms
10
100
1000
BT136
T / s
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
dI /dt limit
T
T2- G+ quadrant
0.01 0.1 1 10
0
2
4
6
8
10
12
BT136
surge duration / s
IT(RMS) / A
1 10 100 1000
0
5
10
15
20
25
30
BT136
Number of cycles at 50Hz
ITSM / A
T
I
TSM
time
I
Tj initial = 25 C max
T
-50 0 50 100 150
0.4
0.6
0.8
1
1.2
1.4
1.6
BT136
Tj / C
VGT(Tj)
VGT(25 C)
Page 5
December 1998 5 Rev1.000
Philips Semiconductors Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
Fig.7. Normalised gate trigger current
I
GT(Tj
)/ IGT(25˚C), versus junction temperature T
j
.
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
j
.
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
j
.
Fig.10. Typical and maximum on-state characteristic.
Fig.11. Transient thermal impedance Z
th j-mb
, versus
pulse width t
p
.
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
BTA204
Tj / C
T2+ G+
T2+ GT2- G-
IGT(Tj)
IGT(25 C)
0 0.5 1 1.5 2 2.5 3
0
2
4
6
8
10
12
BT136
VT / V
IT / A
Tj = 125 C
Tj = 25 C
typ max
Vo = 1.27 V
Rs = 0.091 ohms
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IL(Tj)
IL(25 C)
10us 0.1ms 1ms 10ms 0.1s 1s 10s
0.01
0.1
1
10
BT136
tp / s
Zth j-mb (K/W)
unidirectional
bidirectional
t
p
P
t
D
-50 0 50 100 150
0
0.5
1
1.5
2
2.5
3
TRIAC
Tj / C
IH(Tj)
IH(25C)
Page 6
December 1998 6 Rev1.000
Philips Semiconductors Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
MECHANICAL DATA
Dimensions in mm
Net Mass: 1.1 g
Fig.12. SOT428 : centre pin connected to tab.
MOUNTING INSTRUCTIONS
Dimensions in mm
Fig.13. SOT428 : minimum pad sizes for surface mounting
.
Notes
1. Plastic meets UL94 V0 at 1/8".
6.22 max
2.38 max
0.93 max
6.73 max
0.3
10.4 max
0.5
0.8 max
(x2)
2.285 (x2)
0.5
seating plane
1.1
0.5 min
5.4
4 min
4.6
1
2
3
tab
7.0
7.0
2.15
2.5
4.57
1.5
Page 7
December 1998 7 Rev1.000
Philips Semiconductors Product specification
Three quadrant triacs
guaranteed commutation
BTA204S series D, E and F
BTA204M series D, E and F
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
Page 8
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document doesnot formpart of any quotation or contract, isbelieved tobe accurate and reliable and may bechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999
68
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Printed in The Netherlands 135002/1160/03/pp8 Date of release: December 1998 Document order number: 9397 75006619
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