Page 1
®
BTA/BTB16 and T16 Series
SNUBBERLESS™ , LOGIC LEVEL & STANDARD 16A TRIACS
MAIN FEATURES:
Symbol Value Unit
I
T(RMS)
V
DRM/VRRM
I
GT (Q1)
16 A
600, 700 and 800 V
10 to 50 mA
DESCRIPTION
Available either in through-hole or surface-mount
packages, the BTA/BTB16 and T1 6 triac series is
suitable for general purpose AC sw itching. They
can be used as an ON/OFF function in applications
such as static relays, heating regulation, induction
motor starting circuits... or for phase control
operation in light dimmers, motor speed
controllers, .. .
The snubberless versions (BTA/BTB...W and T16
series) are specially recommended for use on
inductive loads, than ks to their high com mutation
performances. By usin g an internal ceramic pa d,
the BTA series provides voltage insulated tab
(rated at 2500V RMS) complying with UL
standards (File ref.: E81734).
ABSOLUTE MAXIMUM RATINGS
A1
A2
G
TO-220AB
(BTB16)
A1
A2
A2
G
A1
A2
G
2
D
PAK
(T16-G)
A2
A1
A2
G
TO-220AB Insulated
(BTA16)
Symbol Parameter Value Unit
I
T(RMS)
RMS on-state current
(full sine wave)
²
PAK
D2
TO-220AB
Tc = 100°C
16
TO-220AB Ins. Tc = 85°C
I
TSM
²
I
dI/dt
V
DSM/VRSM
I
GM
P
G(AV)
T
stg
T
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25°C)
tI
²
t Value for fusing
Critical rate of rise of on-state current
= 2 x IGT , tr ≤ 100 ns
I
G
Non repetitive surge peak off-state
voltage
F = 60 Hz t = 16.7 ms 168 A
F = 50 Hz t = 20 ms 160
tp = 10 ms 144
F = 120 Hz Tj = 125°C 50 A/µs
V
tp = 10 ms Tj = 25°C
DRM/VRRM
+ 100
Peak gate current tp = 20 µs Tj = 125°C 4 A
Average gate power dissipation Tj = 125°C 1 W
Storage junction temperature range
Operating junction temp erature range
j
- 40 to + 150
- 40 to + 125
October 2002 - Ed: 6A
A
A
V
°C
²
s
1/7
Page 2
BTA/BTB16 and T16 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■ SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants)
Symbol Test Conditions Quadrant T16 BTA/BTB16
T1635 SW CW BW
(1)
I
GT
V
GT
V
GD
I
H
I
dV/dt (2) V
(2)
L
V
= 12 V RL = 33 Ω
D
VD = V
= 500 mA
I
T
I
= 1.2 I
G
= 67 % V
D
RL = 3.3 kΩ Tj = 125°C
DRM
GT
DRM
gate open Tj = 125°C
(dI/dt)c (2) (dV/dt)c = 0.1 V/µs Tj = 125°C
(dV/dt)c = 10 V/µs Tj = 125°C - 3.0 - Without snubber Tj = 125°C 8.5 - 8.5 14
■ ST ANDARD (4 Quadrants)
Symbol Test Conditions Quadrant BTA/BTB16
I
(1)
GT
V
GT
V
GD
I
(2)
H
I
dV/dt (2)
V
= 12 V RL = 33 Ω
D
VD = V
= 500 mA
I
T
IG = 1.2 I
L
= 67 % V
V
D
RL = 3.3 kΩ Tj = 125°C
DRM
GT
gate open Tj = 125°C
DRM
(dV/dt)c(2) (dI/dt)c = 7 A/ms Tj = 125°C MIN. 5 10 V/µs
I - II - III MAX. 35 10 35 50
I - II - III MAX. 1.3 V
I - II - III MIN. 0.2
MAX.35153550mA
I - III MAX. 50 25 50 70 mA
II 60 30 60 80
MIN. 500 40 500 1000 V/µs
- 8.5 - - A/ms
MIN.
Unit
CB
I - II - III
IV
MAX.
25
50
50
100
ALL MAX. 1.3 V
ALL MIN.
0.2 V
MAX. 25 50 mA
I - III - IV MAX. 40 60 mA
II 80 120
MIN. 200 400 V/µs
Unit
mA
V
mA
STATIC CHARACTERISTICS
Symbol Test Conditions Value Unit
(2) ITM = 22.5 A tp = 380 µs
V
TM
(2)
V
to
(2)
R
d
I
DRM
I
RRM
Note 1: minimum IGT is guaranted at 5% of IGT max.
Note 2: for both polarities of A2 referenced to A1
Threshold voltage Tj = 125°C MAX. 0.85 V
Dynamic resistance Tj = 125°C MAX. 25 mΩ
V
= V
DRM
RRM
2/7
Tj = 25°C MAX. 1.55 V
Tj = 25°C
Tj = 125°C 2 mA
MAX.
5µA
Page 3
BTA/BTB16 and T16 Series
THERMAL RESISTANCES
Symbol Parameter Value Unit
R
th(j-c)
R
th(j-a)
S: Copper surface under tab
Junction to case (AC)
Junction to ambient
S = 1 cm
TO-220AB Insulated 2.1
²
TO-220AB Insulated
²
PAK
D
TO-220AB
D²PAK
TO-220AB
1.2
45
60
PRODUCT SELECTOR
Voltage(xxx)
Part Number
600 V 700 V 800 V
BTA/BTB16-xxxB X X X 50 mA Standard TO-220AB
BTA/BTB16-xxxBW X X X 50 mA Snubberless TO-220AB
BTA/BTB16-xxxC X X X 25 mA Standard TO-220AB
BTA/BTB16-xxxCW X X X 35 mA Snubberless TO-220AB
BTA/BTB16-xxxSW X X X 10 mA Logic level TO-220AB
T1635-xxxG X X 35 mA Snubberless
Sensitivity Type
°C/W
°C/W
Package
²
PAK
D
ORDERING INFORMA T IO N
BT A 16 - 600 BW (RG)
TRIAC
SERIES
INSULATION:
A: insulated
B: non insulated
CURRENT:16A
T 16 35 - 600 G (-TR)
TRIAC
SERIES
CURRENT:16A
SENSITIVITY:
35: 35mA
VOLTAGE:
600: 600V
700: 700V
800: 800V
SENSITIVITY &TYPE
B: 50mA STANDARD
BW: 50mA SNUBBERLESS
C: 25mA STANDARD
CW: 35mA SNUBBERLESS
SW: 10mA LOGIC LEVEL
VOLTAGE:
600: 600V
800: 800V
PACKAGE:
2
G: D PAK
PACKING MODE
Blank: Bulk
RG:Tube
PACKING MODE:
Blank:Tube
-TR:Tape & Reel
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BTA/BTB16 and T16 Series
OTHER INFORMAT IO N
Part Number Marking Weight
Base
quantity
Packing
mode
BTA/BTB16-xxxyz BTA/BTB16xxxyz 2.3 g 250 Bulk
BTA/BTB16-xxxyzRG BTA/BTB16-xxxyz 2.3 g 50 Tube
T1635-xxxG T1635xxxG 1.5 g 50 Tube
T1635-xxxG-TR T1635xxxG 1.5 g 1000 Tape & reel
Note: xxx = voltage, y = sensitivity, z = type
Fig. 1: Maximum power dissipation versus RMS
on-state current (ful l cycle).
P (W)
20
18
16
14
12
10
8
6
4
2
0
0246810121416
IT(RMS) (A)
Fig. 2-1: RMS on-state current versus case
temperature (full cycle).
IT(RMS) (A)
18
16
14
12
10
8
6
4
2
0
0 25 50 75 100 125
Tc(°C)
BTB/T16
BTA
Fig. 2-2: D²PAK RMS on-state current versus
ambient temperature (printed circuit board FR4,
copper thickness: 35 µm), full cycle.
IT(RMS) (A)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0 25 50 75 100 125
Tamb(°C)
4/7
2
D PAK
(S=1cm )
Fig. 3: Relative variation of thermal impedance
versus pulse duration.
K=[Zth/Rth]
1E+0
2
1E-1
1E-2
Zth(j-c)
Zth(j-a)
tp (s)
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
Page 5
BTA/BTB16 and T16 Series
Fig. 4: On-state characteristics (maximum
values)
ITM (A)
200
Tj max
100
10
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
Tj=25°C
VTM (V)
Tj max:
Vto = 0.85V
Rd = 25 m
Ω
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
ITSM (A), I²t (A²s)
3000
1000
dI/dt limitation:
50A/µs
Tj initial=25°C
ITSM
Fig. 5: Surge peak on-state current versus
number of cycles.
ITSM (A)
180
160
140
120
Non repetitive
Tj initial=25°C
t=20ms
One cycle
100
80
60
Repetitive
Tc=85°C
40
20
0
1 10 100 1000
Number of cycles
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
2.5
2.0
1.5
1.0
IGT
IH & IL
tp (ms)
100
0.01 0.10 1.00 10.00
I²t
Fig. 8: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values).
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.1 1.0 10.0 100.0
SW
C
B
BW/CW/T1635
(dV/dt)c (V/µs)
0.5
Tj(°C)
0.0
-40 -20 0 20 40 60 80 100 120 140
Fig. 9: Relative variation of critical rate of
decrease of main current versus junction
temperature.
(dI/dt)c [Tj] / (dI/dt)c [Tj specified]
6
5
4
3
2
1
0
0 25 50 75 100 125
Tj (°C)
5/7
Page 6
BTA/BTB16 and T16 Series
Fig. 10:D²PAK Thermal resistance junction to
ambient versus copper surface under tab (printed
circuit board FR4, copper thickness: 35 µm).
Rth(j-a) (°C/W)
80
70
60
50
40
30
20
10
0
0 4 8 1216202428323640
S(cm²)
PACKAGE MECHANICAL DATA
TO-220AB (Pla st ic )
2
D PAK
DIMENSIONS
B
L
I
A
C
b2
F
REF.
A 15.20 15.90 0.598 0.625
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
b1 0.61 0.88 0.024 0.034
l4
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
a1
l3
l2
a2
c2
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 2.40 2.70 0.094 0.106
F 6.20 6.60 0.244 0.259
I 3.75 3.85 0.147 0.151
I4 15.8 0 16.40 16.80 0. 622 0.646 0.661
b1
e
M
c1
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
l3 1.14 1.70 0.044 0.066
M 2.60 0.102
6/7
Page 7
PA CKAGE MECHANICAL DATA
D²PAK (Plastic)
BTA/BTB16 and T16 Series
DIMENSIONS
A
L2
L
L3
E
B2
B
G
2.0 MIN.
FLAT ZONE
C2
A1
C
A2
FOOTPRINT DIMENSIONS (in millimeters)
D²PAK (Plastic)
V2
REF .
Millimeters Inches
Min. T yp. Max. Min. Typ. Max.
A 4.30 4.60 0.169 0.181
A1 2.49 2.69 0.098 0.106
D
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.25 1.40 0.048 0.055
C 0.45 0.60 0.017 0.024
C2 1.21 1.36 0.047 0.054
R
D 8.95 9.35 0.352 0.368
E 10.00 10.28 0.393 0.405
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2 0° 8° 0° 8°
16.90
10.30
8.90
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to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
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