Datasheet BTA151-800R, BTA151-650R, BTA151-500R Datasheet (Philips)

Page 1

Philips Semiconductors Product specification

Thyristors BTA151 series sensitive gate

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BTA151- 500R 650R 800R switching and phase control V applications. V

PINNING - SOT82 PIN CONFIGURATION SYMBOL

PIN DESCRIPTION

, Repetitive peak off-state 500 650 800 V

DRM

RRM

T(AV)

T(RMS)

TSM

voltages Average on-state current 7.5 7.5 7.5 A RMS on-state current 12 12 12 A Non-repetitive peak on-state 100 100 100 A current

1 cathode

2 anode 3 gate

tab anode

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

-500R -650R -800R

DRM

T(AV)

T(RMS)

TSM

, V

Repetitive peak off-state - 5001650

RRM

voltages Average on-state current half sine wave; Tmb ≤ 109 ˚C - 7.5 A

RMS on-state current all conduction angles - 12 A Non-repetitive peak half sine wave; Tj = 25 ˚C prior to on-state current surge

t = 10 ms - 100 A

I2tI

t for fusing t = 10 ms - 50 A2s

t = 8.3 ms - 110 A

dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/µs

on-state current after dIG/dt = 50 mA/µs

triggering I V V P P T T

GM RGM GM

G(AV) stg j

Peak gate current - 2 A Peak gate voltage - 5 V Peak reverse gate voltage - 12 V Peak gate power - 5 W Average gate power over any 20 ms period - 0.5 W Storage temperature -40 150 ˚C Operating junction - 125 ˚C temperature

800 V

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997 1 Rev 1.200

Page 2

Philips Semiconductors Product specification

Thyristors BTA151 series sensitive gate

THERMAL RESISTANCES

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

th j-mb

th j-a

STATIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ID, I

Thermal resistance - - 1.3 K/W junction to mounting base Thermal resistance in free air - 60 - K/W junction to ambient

Gate trigger current VD = 12 V; IT = 0.1 A - 2 4 mA Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA Holding current VD = 12 V; IGT = 0.1 A - 7 16 mA On-state voltage IT = 23 A - 1.4 1.75 V Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V

Off-state leakage current VD = V

VD = V

; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V

DRM(max) DRM(max)

; VR = V

; Tj = 125 ˚C - 0.1 0.5 mA

RRM(max)

DYNAMIC CHARACTERISTICS

Tj = 25 ˚C unless otherwise stated

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

dVD/dt Critical rate of rise of VD = 67% V

off-state voltage exponential waveform

Gate controlled turn-on ITM = 40 A; VD = V time dIG/dt = 5 A/µs

Circuit commutated VD = 67% V turn-off time dITM/dt = 30 A/µs; dVD/dt = 50 V/µs;

RGK = 100 Ω

; Tj = 125 ˚C;

DRM(max)

Gate open circuit 50 130 - V/µs

RGK = 100 Ω 200 1000 - V/µs

; IG = 0.1 A; - 2 - µs

DRM

; ITM = 20 A; VR = 25 V; - 70 - µs

DRM(max)

September 1997 2 Rev 1.200

Page 3

Philips Semiconductors Product specification

Thyristors BTA151 series sensitive gate

Ptot / W

conduction

form

angle

factor

degrees

012345678

2.8

2.2

120

1.9

180

1.57

BT151

2.8

IT(AV) / A

Fig.1. Maximum on-state dissipation, P

average on-state current, I

a = form factor = I

ITSM / A

1000

dI /dt limit

100

10us 100us 1ms

TSM

time

Tj initial = 25 C max

T(RMS)

BT151

T / s

2.2

T(AV)

/ I

T(AV)

Tmb(max) / C

a = 1.57

1.9

, versus

tot

, where

105.5

112

118.5

125

10ms

Fig.2. Maximum permissible non-repetitive peak

on-state current I

, versus pulse width tp, for

TSM

sinusoidal currents, tp ≤ 10ms.

ITSM / A

120

100

1 10 100 1000

Number of half cycles at 50Hz

BT151

TSM

time

Tj initial = 25 C max

Fig.4. Maximum permissible non-repetitive peak

on-state current I

sinusoidal currents, f = 50 Hz.

IT(RMS) / A

0.01 0.1 1 10

, versus number of cycles, for

TSM

BT151

surge duration / s

Fig.5. Maximum permissible repetitive rms on-state

current I

, versus surge duration, for sinusoidal

T(RMS)

currents, f = 50 Hz; Tmb ≤ 109˚C.

IT(RMS) / A

-50 0 50 100 150

Fig.3. Maximum permissible rms current I

versus mounting base temperature Tmb.

BT151

109 C

Tmb / C

T(RMS)

VGT(Tj)

VGT(25 C)

1.6

1.4

1.2

0.8

0.6

0.4

-50 0 50 100 150

BT151

Tj / C

Fig.6. Normalised gate trigger voltage

VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.

September 1997 3 Rev 1.200

Page 4

Philips Semiconductors Product specification

Thyristors BTA151 series sensitive gate

IGT(Tj)

IGT(25 C)

2.5

1.5

0.5

-50 0 50 100 150

BT151

Tj / C

Fig.7. Normalised gate trigger current

IGT(Tj)/ IGT(25˚C), versus junction temperature T

IL(Tj)

2.5

1.5

0.5

IL(25 C)

BT145

IT / A

Tj = 125 C

Tj = 25 C

Vo = 1.06 V

Rs = 0.0304 ohms

0 0.5 1 1.5 2

BT151

typ max

VT / V

Fig.10. Typical and maximum on-state characteristic.

Zth j-mb (K/W)

0.1

0.01

BT151

-50 0 50 100 150 Tj / C

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),

versus junction temperature T

IH(Tj)

IH(25 C)

2.5

1.5

0.5

-50 0 50 100 150

BT151

Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),

versus junction temperature T

0.001 10us 0.1ms 1ms 10ms 0.1s 1s 10s

Fig.11. Transient thermal impedance Z

dVD/dt (V/us)

10000

1000

100

0 50 100 150

tp / s

pulse width tp.

Tj / C

, versus

th j-mb

RGK = 100 Ohms

gate open circuit

Fig.12. Typical, critical rate of rise of off-state voltage,

dVD/dt versus junction temperature Tj.

September 1997 4 Rev 1.200

Page 5

Philips Semiconductors Product specification

Thyristors BTA151 series sensitive gate

MECHANICAL DATA

Dimensions in mm Net Mass: 0.8 g

mounting

base

4.58

2.54

max

2.8

2.3

0.5

1.2

3.1

2.5

7.8

max

3.75

11.1 max

15.3 min

2.29

0.88

1) Lead dimensions within this zone uncontrolled.

Fig.13. SOT82; pin 2 connected to mounting base.

Notes

1. Refer to mounting instructions for SOT82 envelopes.

2. Epoxy meets UL94 V0 at 1/8".

September 1997 5 Rev 1.200

max

Page 6

Philips Semiconductors Product specification

Thyristors BTA151 series sensitive gate

DEFINITIONS

Data sheet status

Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.

Limiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 Philips Electronics N.V. 1997

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

September 1997 6 Rev 1.200