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BTA12-600BW3G,
BTA12-800BW3G
Triacs
Silicon Bidirectional Thyristors
Designed for high performance full−wave ac control applications
where high noise immunity and high commutating di/dt are required.
Features
• Blocking Voltage to 800 V
• On-State Current Rating of 12 A RMS at 25°C
• Uniform Gate Trigger Currents in Three Quadrants
• High Immunity to dV/dt − 2000 V/ms minimum at 125°C
• Minimizes Snubber Networks for Protection
• Industry Standard TO-220AB Package
• High Commutating dI/dt − 2.5 A/ms minimum at 125°C
• Internally Isolated (2500 V
• These are Pb−Free Devices
RMS
)
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TRIACS
12 AMPERES RMS
600 thru 800 VOLTS
MT2
4
MT1
G
MARKING
DIAGRAM
MAXIMUM RATINGS (T
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
= −40 to 125°C, Sine Wave,
J
50 to 60 Hz, Gate Open)
On-State RMS Current
(Full Cycle Sine Wave, 60 Hz, T
Peak Non-Repetitive Surge Current
(One Full Cycle Sine Wave, 60 Hz,
T
= 25°C)
C
Circuit Fusing Consideration (t = 8.3 ms) I2t 46 A2sec
Non−Repetitive Surge Peak Off−State
Voltage (T
Peak Gate Current (TJ = 125°C, t = 20ms) I
Peak Gate Power
(Pulse Width ≤ 1.0 ms, T
Average Gate Power (TJ = 125°C) P
Operating Junction Temperature Range T
Storage Temperature Range T
RMS Isolation Voltage
(t = 300 ms, R.H. ≤ 30%, T
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
= 25°C, t = 10ms)
J
and V
DRM
for all types can be applied on a continuous basis. Blocking
RRM
= 25°C unless otherwise noted)
J
Symbol Value Unit
V
DRM,
V
RRM
BTA12−600BW3G
BTA12−800BW3G
I
T(RMS)
I
TSM
V
DSM/
V
RSM
GM
P
GM
G(AV)
J
stg
V
iso
= 80°C)
C
= 25°C)
A
= 80°C)
C
600
800
12 A
105 A
V
DSM/VRSM
+100
4.0 A
20 W
1.0 W
−40 to +125 °C
−40 to +150 °C
2500 V
V
V
TO−220AB
1
2
3
x = 6 or 8
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
CASE 221A
STYLE 12
PIN ASSIGNMENT
1
2
3 Gate
4
Main Terminal 1
Main Terminal 2
No Connection
ORDERING INFORMATION
Device Package Shipping
BTA12−600BW3G TO−220AB
BTA12−800BW3G TO−220AB
(Pb−Free)
(Pb−Free)
BTA12−xBWG
AYWW
50 Units / Rail
50 Units / Rail
© Semiconductor Components Industries, LLC, 2008
August, 2008 − Rev. 0
*For additional information on our Pb−Free strategy and
soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
1 Publication Order Number:
BTA12−600BW3/D
Page 2
BTA12−600BW3G, BTA12−800BW3G
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Case (AC)
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 seconds T
R
q
JC
R
q
JA
L
2.5
60
260 °C
°C/W
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted; Electricals apply in both directions)
J
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated V
DRM
, V
; Gate Open) TJ = 25°C
RRM
ON CHARACTERISTICS
Peak On-State Voltage (Note 2)
(ITM = ± 17 A Peak)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Holding Current
(V
= 12 V, Gate Open, Initiating Current = ±100 mA)
D
Latching Current (VD = 12 V, IG = 60 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Trigger Voltage (VD = 12 V, RL = 30 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
Gate Non−Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, T
= 125°C, No Snubber)
J
Critical Rate of Rise of On−State Current
(T
= 125°C, f = 120 Hz, I
J
= 2 x IGT, tr ≤ 100 ns)
G
Critical Rate of Rise of Off-State Voltage
(V
= 0.66 x V
D
, Exponential Waveform, Gate Open, TJ = 125°C)
DRM
2. Indicates Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
= 125°C
T
J
Symbol Min Typ Max Unit
I
,
DRM
I
RRM
V
TM
I
GT
I
H
I
L
V
GT
V
GD
(dI/dt)
c
−
−
−
−
− − 1.55 V
2.5
2.5
2.5
−
−
−
− − 50 mA
−
−
−
0.5
0.5
0.5
0.2
0.2
0.2
−
−
−
−
−
−
−
−
−
2.5 − − A/ms
dI/dt − − 50
dV/dt 2000 − −
0.005
2.0
50
50
50
70
80
70
1.7
1.1
1.1
−
−
−
mA
mA
mA
V
V
A/ms
V/ms
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Symbol Parameter
V
I
DRM
V
I
RRM
V
I
H
DRM
RRM
TM
Peak Repetitive Forward Off State Voltage
Peak Forward Blocking Current
Peak Repetitive Reverse Off State Voltage
Peak Reverse Blocking Current
Maximum On State Voltage
Holding Current
BTA12−600BW3G, BTA12−800BW3G
Voltage Current Characteristic of Triacs
(Bidirectional Device)
on state
I
at V
RRM
Quadrant Definitions for a Triac
MT2 POSITIVE
(Positive Half Cycle)
+
RRM
Quadrant 3
MainTerminal 2 −
I
V
TM
+ Current
H
V
I
H
off state
TM
Quadrant 1
MainTerminal 2 +
+ Voltage
I
at V
DRM
DRM
(+) MT2
Quadrant II Quadrant I
(−) I
GT
GATE
MT1
REF
I
− + I
GT
(−) MT2
Quadrant III Quadrant IV
(−) I
GT
GATE
MT1
REF
(+) I
GATE
(+) I
GATE
(+) MT2
GT
MT1
REF
(−) MT2
GT
MT1
REF
−
MT2 NEGATIVE
(Negative Half Cycle)
All polarities are referenced to MT1.
With in−phase signals (using standard AC lines) quadrants I and III are used.
GT
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BTA12−600BW3G, BTA12−800BW3G
125
110
, CASE TEMPERATURE (°C)
C
T
1000
95
80
65
120°, 90°, 60°, 30°
I
, RMS ON-STATE CURRENT (A)
T(RMS)
Figure 1. RMS Current Derating
180°
DC
20
18
16
14
12
10
8
6
, AVERAGE POWER (W)
AV
4
P
2
121086420
0
1
DC
180°
120°
60°
30°
I
, ON-STATE CURRENT (A)
T(RMS)
Figure 2. On−State Power Dissipation
90°
121086420
100
T
10
, INSTANTANEOUS ON−STATE CURRENT (A)
T
I
1
Typical @
= −40°C
J
Typical @ TJ = 25°C
Typical @ TJ = 125°C
Typical @ TJ = 25°C
Typical @ TJ = −40°C
Typical @ TJ = 125°C
0.1
0.01
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
55
45
35
25
t, TIME (ms)
Figure 4. Thermal Response
MT2 Positive
4
10001001010.1
1·10
0.1
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VT, INSTANTANEOUS ON-STATE VOLTAGE (V)
Figure 3. On-State Characteristics
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, HOLD CURRENT (mA)
15
H
I
5
−40 −25 −105 203550658095110125
MT2 Negative
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Hold Current Variation
4
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BTA12−600BW3G, BTA12−800BW3G
d
/d
CRITICAL
RATE
OF
RISE
OF
OFF
STATE
VOLTAGE (V/
)
5
5
100
VD = 12 V
R
= 30 W
L
10
Q3
Q1
Q2
, GATE TRIGGER CURRENT (mA)
GT
I
1
−40 −25 −10 5 20 35 50 65 80 95 110 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Gate Trigger Current Variation
s
μ
5k
VD = 800 Vpk
T
= 125°C
4k
J
‐
3k
2k
1k
0
t,
RG, GATE TO MAIN TERMINAL 1 RESISTANCE (W)
v
Figure 8. Critical Rate of Rise of Off-State Voltage
(Exponential Waveform)
2.0
1.8
1.6
Q1
VD = 12 V
R
= 30 W
L
1.4
1.2
1.0
0.8
GATE TRIGGER VOLTAGE (V)LATCHING CURRENT (mA)
0.6
0.4
−40 −25 −105 20355065809511012
, JUNCTION TEMPERATURE (°C)
T
J
Q3
Q2
Figure 7. Gate Trigger Voltage Variation
120
100
Q2
80
60
Q1
40
20
10000100010010
0
−40 −25 −10 5 20 35 50 65 80 95 110 12
Q3
TJ, JUNCTION TEMPERATURE (°C)
VD = 12 V
R
= 30 W
L
Figure 10. Latching Current Variation
200 V
ADJUST FOR
, 60 Hz V
I
TM
CHARGE
RMS
L
L
MEASURE
AC
TRIGGER
CHARGE
CONTROL
I
1N4007
200 V
+
MT2
1N914
NON‐POLAR
C
51 W
L
TRIGGER CONTROL
MT1
G
Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.
Figure 9. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)
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c
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BTA12−600BW3G, BTA12−800BW3G
PACKAGE DIMENSIONS
TO−220
CASE 221A−07
ISSUE O
SEATING
−T−
PLANE
FB
Q
4
A
123
T
U
C
S
H
K
Z
L
V
R
J
G
D
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM MIN MAX MIN MAX
A 0.570 0.620 14.48 15.75
B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
D 0.025 0.035 0.64 0.88
F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
H 0.110 0.155 2.80 3.93
J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
U 0.000 0.050 0.00 1.27
V 0.045 --- 1.15 ---
Z --- 0.080 --- 2.04
STYLE 12:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. NOT CONNECTED
MILLIMETERSINCHES
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to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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BTA12−600BW3/D
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