Page 1
Philips Semiconductors Product specification
Thyristors BT300 series
GENERAL DESCRIPTION QUICK REFERENCE DATA
Glasspassivatedthyristorsinaplastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT300- 500R 600R 800R
bidirectional blocking voltage V
capability and high thermal cycling V
performance. Typical applications I
include motor control, industrial and I
domestic lighting, heating and static I
switching. current
PINNING - TO220AB PIN CONFIGURATION SYMBOL
, Repetitive peak off-state 500 600 800 V
DRM
RRM
T(AV)
T(RMS)
TSM
voltages
Average on-state current 5 5 5 A
RMS on-state current 8 8 8 A
Non-repetitive peak on-state 65 65 65 A
PIN DESCRIPTION
1 cathode
tab
ak
2 anode
3 gate
tab anode
123
g
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500R -600R -800R
V
DRM
I
T(AV)
I
T(RMS)
I
TSM
, V
Repetitive peak off-state - 5001600
RRM
voltages
Average on-state current half sine wave; Tmb ≤ 111 ˚C - 5 A
RMS on-state current all conduction angles - 8 A
Non-repetitive peak half sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 10 ms - 65 A
I2tI
2
t for fusing t = 10 ms - 21 A2s
t = 8.3 ms - 71 A
dIT/dt Repetitive rate of rise of ITM = 10 A; IG = 50 mA; - 50 A/µs
on-state current after dIG/dt = 50 mA/µs
triggering
I
V
V
P
P
T
T
GM
GM
RGM
GM
G(AV)
stg
j
Peak gate current - 2 A
Peak gate voltage - 5 V
Peak reverse gate voltage - 5 V
Peak gate power - 5 W
Average gate power over any 20 ms period - 0.5 W
Storage temperature -40 150 ˚C
Operating junction - 125 ˚C
temperature
1
800 V
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
September 1997 1 Rev 1.100
Page 2
Philips Semiconductors Product specification
Thyristors BT300 series
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
R
th j-a
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
GT
I
L
I
H
V
T
V
GT
ID, I
R
Thermal resistance - - 1.8 K/W
junction to mounting base
Thermal resistance in free air - 60 - K/W
junction to ambient
Gate trigger current VD = 12 V; IT = 0.1 A - 2 15 mA
Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA
Holding current VD = 12 V; IGT = 0.1 A - 10 20 mA
On-state voltage IT = 12 A - 1.35 1.6 V
Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.6 1.5 V
Off-state leakage current VD = V
VD = V
; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V
DRM(max)
DRM(max)
; VR = V
; Tj = 125 ˚C - 0.1 0.5 mA
RRM(max)
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
dVD/dt Critical rate of rise of VDM = 67% V
off-state voltage exponential waveform.
t
gt
Gate controlled turn-on ITM = 10 A; VD = V
time dIG/dt = 5 A/µs
t
q
Circuit commutated VD = 67% V
turn-off time ITM = 12 A; VR = 25 V; dITM/dt = 30 A/µs;
dVD/dt = 50 V/µs; RGK = 100 Ω
DRM(max)
; Tj = 125 ˚C;
DRM(max)
Gate open circuit 50 100 - V/µs
RGK = 100 Ω 200 1000 - V/µs
; IG = 0.1 A; - 2 - µs
DRM(max)
; Tj = 125 ˚C; - 70 - µs
September 1997 2 Rev 1.100
Page 3
Philips Semiconductors Product specification
Thyristors BT300 series
Ptot / W Tmb(max) / C
conduction
form
angle
degrees
30
60
90
120
180
factor
a
4
2.8
2.2
1.9
1.57
8
6
4
2
0
0123456
Fig.1. Maximum on-state dissipation, P
average on-state current, I
a = form factor = I
ITSM / A
1000
dI /dt limit
T
100
BT300
a = 1.57
1.9
2.2
2.8
4
IT(AV) / A
, versus
tot
, where
T(AV)
/ I
T(AV)
.
T(RMS)
BT300
111
114.5
118
121.5
125
ITSM / A
70
60
50
40
30
20
10
0
1 10 100 1000
Number of half cycles at 50Hz
BT300
I
I
Tj initial = 25 C max
TSM
T
time
T
Fig.4. Maximum permissible non-repetitive peak
on-state current I
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
24
20
16
12
, versus number of cycles, for
TSM
BT150
I
I
T
10
10us 100us 1ms
TSM
time
T
Tj initial = 25 C max
T / s
10ms
Fig.2. Maximum permissible non-repetitive peak
on-state current I
, versus pulse width tp, for
TSM
sinusoidal currents, tp ≤ 10ms.
IT(RMS) / A
9
8
7
6
5
4
3
2
1
0
-50 0 50 100 150
Fig.3. Maximum permissible rms current I
versus mounting base temperature Tmb.
BT258
Tmb / C
111 C
T(RMS)
,
8
4
0
0.01 0.1 1 10
surge duration / s
Fig.5. Maximum permissible repetitive rms on-state
current I
, versus surge duration, for sinusoidal
T(RMS)
currents, f = 50 Hz; Tmb ≤ 111˚C.
VGT(Tj)
VGT(25 C)
1.6
1.4
1.2
1
0.8
0.6
0.4
-50 0 50 100 150
BT151
Tj / C
Fig.6. Normalised gate trigger voltage
VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
September 1997 3 Rev 1.100
Page 4
Philips Semiconductors Product specification
Thyristors BT300 series
IGT(Tj)
IGT(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BT150
Tj / C
Fig.7. Normalised gate trigger current
IGT(Tj)/ IGT(25˚C), versus junction temperature T
IL(Tj)
2.5
1.5
IL(25 C)
3
2
1
BT150
IT / A
30
Tj = 125 C
Tj = 25 C
25
Vo = 1.21 V
Rs = 0.0313 ohms
20
15
10
5
0
0 0.5 1 1.5 2
BT300
typ
max
VT / V
Fig.10. Typical and maximum on-state characteristic.
.
j
Zth j-mb (K/W)
10
1
0.1
BT150
t
P
p
D
0.5
0
-50 0 50 100 150
Tj / C
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C),
versus junction temperature T
IH(Tj)
IH(25 C)
3
2.5
2
1.5
1
0.5
0
-50 0 50 100 150
BT150
Tj / C
.
j
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C),
versus junction temperature T
.
j
t
0.01
10us 0.1ms 1ms 10ms 0.1s 1s 10s
tp / s
Fig.11. Transient thermal impedance Z
pulse width tp.
dVD/dt (V/us)
10000
1000
100
10
0 50 100 150
Tj / C
, versus
th j-mb
RGK = 100 Ohms
gate open circuit
Fig.12. Typical, critical rate of rise of off-state voltage,
dVD/dt versus junction temperature Tj.
September 1997 4 Rev 1.100
Page 5
Philips Semiconductors Product specification
Thyristors BT300 series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10,3
max
1,3
3,7
4,5
max
3,0 max
not tinned
1,3
max
(2x)
123
2,54 2,54
2,8
3,0
13,5
min
0,9 max (3x)
5,9
min
15,8
max
0,6
2,4
Fig.13. TO220AB; pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
September 1997 5 Rev 1.100
Page 6
Philips Semiconductors Product specification
Thyristors BT300 series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1997 6 Rev 1.100
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